SBOS223H December   2001  – October 2024 OPA690

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics OPA690IDBV, VS = ±5 V
    6. 6.6  Electrical Characteristics OPA690IDBV, VS = 5 V
    7. 6.7  Electrical Characteristics OPA690ID, VS = ±5 V
    8. 6.8  Electrical Characteristics OPA690ID, VS = 5 V
    9. 6.9  Typical Characteristics: OPA690IDBV, VS = ±5V
    10. 6.10 Typical Characteristics: OPA690IDBV, VS = 5V
    11. 6.11 Typical Characteristics: OPA690ID, VS = ±5V
    12. 6.12 Typical Characteristics: OPA690ID, VS = 5V
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Wideband Voltage-Feedback Operation
      2. 7.3.2 Input and ESD Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Disable Operation
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Bandwidth Versus Gain: Noninverting Operation
      2. 8.1.2 Inverting Amplifier Operation
      3. 8.1.3 Optimizing Resistor Values
      4. 8.1.4 Output Current and Voltage
      5. 8.1.5 Driving Capacitive Loads
      6. 8.1.6 Distortion Performance
      7. 8.1.7 Noise Performance
      8. 8.1.8 DC Accuracy and Offset Control
      9. 8.1.9 Thermal Analysis
    2. 8.2 Typical Applications
      1. 8.2.1 High-Performance DAC Transimpedance Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
      2. 8.2.2 Single-Supply Active Filters
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Application Curve
      3. 8.2.3 High-Power Line Driver
        1. 8.2.3.1 Design Requirements
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Macromodels and Applications Support
      2. 9.1.2 Demonstration Fixtures
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) OPA690 UNIT
D (SOIC) DBV (SOT-23)
8 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 125 171.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 70 110.6 °C/W
RθJB Junction-to-board thermal resistance 65.3 85.1 °C/W
ψJT Junction-to-top characterization parameter 25.6 53.9 °C/W
ψJB Junction-to-board characterization parameter 64.8 84.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.