SBOS378A March   2019  – November 2023 INA185

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 High Bandwidth and Slew Rate
      2. 6.3.2 Bidirectional Current Monitoring
      3. 6.3.3 Wide Input Common-Mode Voltage Range
      4. 6.3.4 Precise Low-Side Current Sensing
      5. 6.3.5 Rail-to-Rail Output Swing
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Mode
      2. 6.4.2 Unidirectional Mode
      3. 6.4.3 Bidirectional Mode
      4. 6.4.4 Input Differential Overload
      5. 6.4.5 Shutdown Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Basic Connections
      2. 7.1.2 RSENSE and Device Gain Selection
      3. 7.1.3 Signal Filtering
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Common-Mode Transients Greater Than 26 V
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

at TA = 25°C, VSENSE = VIN+ – VIN–, VS = 5 V, VREF = VS / 2, and VIN+ = 12 V (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
CMRR Common-mode rejection ratio, RTI (1) VIN+ = 0 V to 26 V, VSENSE = 0 mV,
TA = –40°C to +125°C		 A1 device 86 100 dB
A2, A3 devices 96 100
A4 devices 106 120
VOS Offset voltage, RTI  VSENSE = 0 mV, VIN+ = 0 V A1 devices ±25 ±135 μV
A2, A3, A4 devices ±5 ±55
VSENSE = 0 mV, VIN+ = 12 V A1 devices ±100 ±450
A2, A3 devices ±25 ±130
A4 device ±25 ±100
dVOS/dT Offset drift, RTI VSENSE = 0 mV, TA = –40°C to +125°C 0.2 0.5 μV/°C
PSRR Power supply rejection ratio, RTI VS = 2.7 V to 5.5 V, VIN+ = 12 V, VSENSE = 0 mV ±8 ±30 μV/V
IIB Input bias current VSENSE = 0 mV, VCM = 0 V -6 μA
VSENSE = 0 mV 75
IIO Input offset current VSENSE = 0 mV ±0.05 μA
OUTPUT
G Gain A1 devices 20 V/V
A2 devices 50
A3 devices 100
A4 devices 200
EG Gain error VOUT = 0.5 V to VS – 0.5 V,
TA = –40°C to +125°C		 A1, A2, A3 devices ±0.05% ±0.2%
A4 device ±0.07% ±0.25%
Gain error drift TA = –40°C to +125°C 1.5 8 ppm/°C
Nonlinearity error VOUT = 0.5 V to VS – 0.5 V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT (2)
VSP Swing to VS RL = 10 kΩ to GND, TA = –40°C to +125°C (V+) – 0.02 (V+) – 0.026 V
VSN Swing to GND RL = 10 kΩ to GND, VIN+ – VIN– = –10mV,
TA = –40°C to +125°C		 (VGND) + 0.0005 (VGND) + 0.0035 V
VSG Zero current swing to GND RL = Open, VIN+ – VIN– = 0mV,
VREF = 0 V, TA = –40°C to +125°C		 A1 devices (VGND) + 0.0005 (VGND) + 0.006 V
A2, A3, A4 devices (VGND) + 0.0005 (VGND) + 0.012
FREQUENCY RESPONSE
BW Bandwidth CLOAD = 10 pF A1 devices 350 kHz
A2 devices 210
A3 devices 150
A4 devices 105
SR Slew rate 2 V/μs
NOISE, RTI (1)
Voltage noise density 40 nV/√Hz
POWER SUPPLY
IQ Quiescent current VSENSE = 0 mV 200 260 μA
VSENSE = 0 mV, TA = –40°C to +125°C 300
(1) RTI = referred-to-input.
(2) See Typical Characteristic curve, Output Voltage Swing vs Output Current