SBOS629A April   2018  – July 2018 OPA858

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      High-Speed Time-of-Flight Receiver
      2.      Photodiode Capacitance vs. Bandwidth and Noise
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input and ESD Protection
      2. 9.3.2 Feedback Pin
      3. 9.3.3 Wide Gain-Bandwidth Product
      4. 9.3.4 Slew Rate and Output Stage
      5. 9.3.5 Current Noise
    4. 9.4 Device Functional Modes
      1. 9.4.1 Split-Supply and Single-Supply Operation
      2. 9.4.2 Power-Down Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Using the OPA858 as a Transimpedance Amplifier
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) OPA858 UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 80.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 100 °C/W
RθJB Junction-to-board thermal resistance 45 °C/W
ψJT Junction-to-top characterization parameter 6.8 °C/W
ψJB Junction-to-board characterization parameter 45.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 22.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.