SBOS758F April   2016  – June 2024 THS6212

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 12 V
    6. 5.6 Electrical Characteristics VS = 28 V
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics: VS = 12 V
    9. 5.9 Typical Characteristics: VS = 28 V
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Voltage and Current Drive
      2. 6.3.2 Driving Capacitive Loads
      3. 6.3.3 Distortion Performance
      4. 6.3.4 Differential Noise Performance
      5. 6.3.5 DC Accuracy and Offset Control
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Wideband Current-Feedback Operation
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Dual-Supply Downstream Driver
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Line Driver Headroom Requirements
          2. 7.2.2.2.2 Computing Total Driver Power for Line-Driving Applications
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.9 Typical Characteristics: VS = 28 V

At TA ≅ 25°C, AV = 10 V/V, RF = 1.24 kΩ, RL = 100 Ω, RS = 2.5 Ω, RADJ = 0 Ω, full-bias mode (unless otherwise noted).

THS6212 Small-Signal Frequency Response
VO = 2 VPP
Figure 5-37 Small-Signal Frequency Response
THS6212 Large-Signal Frequency Response vs VO
AV = 10 V/V
Figure 5-39 Large-Signal Frequency Response vs VO
THS6212 Large-Signal Frequency Response vs Bias Modes
VO = 40 VPP
Figure 5-41 Large-Signal Frequency Response vs Bias Modes
THS6212 Harmonic Distortion vs Frequency
VO = 2 VPP
Figure 5-43 Harmonic Distortion vs Frequency
THS6212 Harmonic Distortion vs VO
f = 1 MHz, RL = 50 Ω
Figure 5-45 Harmonic Distortion vs VO
THS6212 Harmonic Distortion vs RL
f = 1 MHz, VO = 2 VPP
Figure 5-47 Harmonic Distortion vs RL
THS6212 Small-Signal Pulse Response
VO step = 2 VPP
Figure 5-49 Small-Signal Pulse Response
THS6212 Quiescent Current vs RADJ
Figure 5-51 Quiescent Current vs RADJ
THS6212 Small-Signal Frequency Response vs RF
VO = 2 VPP
Figure 5-38 Small-Signal Frequency Response vs RF
THS6212 Large-Signal Frequency Response vs VO
AV = 15 V/V
Figure 5-40 Large-Signal Frequency Response vs VO
THS6212 Intermodulation Distortion vs Frequency
Figure 5-42 Intermodulation Distortion vs Frequency
THS6212 Harmonic Distortion vs Gain
f = 1 MHz, VO = 2 VPP RL = 50 Ω
Figure 5-44 Harmonic Distortion vs Gain
THS6212 Harmonic Distortion vs VO
f = 10 MHz, RL = 50 Ω
Figure 5-46 Harmonic Distortion vs VO
THS6212 Harmonic Distortion vs RL
f = 10 MHz, VO = 2 VPP
Figure 5-48 Harmonic Distortion vs RL
THS6212 Large-Signal Pulse Response
VO step = 40 VPP
Figure 5-50 Large-Signal Pulse Response