SBOS758F April   2016  – June 2024 THS6212

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 12 V
    6. 5.6 Electrical Characteristics VS = 28 V
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics: VS = 12 V
    9. 5.9 Typical Characteristics: VS = 28 V
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Voltage and Current Drive
      2. 6.3.2 Driving Capacitive Loads
      3. 6.3.3 Distortion Performance
      4. 6.3.4 Differential Noise Performance
      5. 6.3.5 DC Accuracy and Offset Control
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Wideband Current-Feedback Operation
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Dual-Supply Downstream Driver
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Line Driver Headroom Requirements
          2. 7.2.2.2.2 Computing Total Driver Power for Line-Driving Applications
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) THS6212 UNIT
RHF (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 42.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.8 °C/W
RθJB Junction-to-board thermal resistance 20.9 °C/W
ΨJT Junction-to-top characterization parameter 3.8 °C/W
ψJB Junction-to-board characterization parameter 20.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 9.5 °C/W
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.