SBOSA08 February   2021 INA183

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Single-Supply Operation from IN+
      2. 8.3.2 Low Gain Error and Offset Voltage
      3. 8.3.3 Low Drift Architecture
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Unidirectional, High-Side Operation
      3. 8.4.3 Input Differential Overload
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 RSENSE and Device Gain Selection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

7.5 Electrical Characteristics

at TA = 25 °C, VSENSE = VIN+ – VIN–, and VIN+ = 12 V, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range TA = –40 °C to +125 °C 2.7 26 V
CMRR Common-mode rejection ratio VIN+ = 2.7 V to 26 V, VSENSE = 10 mV,
TA = –40 °C to +125 °C		 100 120 dB
VOS Offset voltage, RTI (1) VCM = 12 V ±25 ±170 μV
dVOS/dT RTI vs temperature TA = –40 °C to +125 °C 0.1 0.5 μV/°C
IIB Input bias current (IB-) VSENSE = 0 mV 30 40 μA
OUTPUT
G Gain A1 devices 50 V/V
A2 devices 100 V/V
A3 devices 200 V/V
EG Gain error VOUT = 0.5 V to VIN+ – 0.5 V,
TA = –40 °C to +125 °C		 ±0.1% ±0.4%
Gain error vs temperature TA = –40 °C to +125 °C 3 10 ppm/°C
Nonlinearity error VOUT = 0.5 V to VIN+ – 0.5 V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT
VSP Swing to IN+  RL = 10 kΩ to GND, TA = –40 °C to +125 °C (VIN+) – 0.05 (VIN+) – 0.2 V
VSN Swing to GND RL = 10 kΩ to GND, VIN+ - VIN- = -10 mV,
TA = –40 °C to +125 °C		 (VGND) + 0.005 (VGND) + 0.05 V
FREQUENCY RESPONSE
BW Bandwidth A1 devices CLOAD = 10 pF 80 kHz
A2 devices CLOAD = 10 pF 30 kHz
A3 devices CLOAD = 10 pF 14 kHz
SR Slew rate 0.4 V/μs
NOISE, RTI (1)
Voltage noise density 25 nV/√Hz
POWER SUPPLY
IQ Quiescent current, (IN+) VSENSE = 0 mV 83 130 μA
IQ over temperature TA = –40 °C to +125 °C 140 μA
(1) RTI = referred-to-input.