SBOSA95F May   2022  – October 2024 OPA2863A , OPA863A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information OPA863A
    5. 6.5  Thermal Information OPA2863A
    6. 6.6  Electrical Characteristics VS = ±5 V
    7. 6.7  Electrical Characteristics VS = 3 V
    8. 6.8  Typical Characteristics: VS = ±5 V
    9. 6.9  Typical Characteristics: VS = 3 V
    10. 6.10 Typical Characteristics: VS = 3 V to 10 V
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Stage
      2. 7.3.2 Output Stage
        1. 7.3.2.1 Overload Power Limit
      3. 7.3.3 ESD Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Down Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Active Filters
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Low-Power SAR ADC Driver and Reference Buffer
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.5 Thermal Information OPA2863A

THERMAL METRIC(1) OPA2863A UNIT
D (SOIC) DGK (VSSOP) DSN (USON)
8 PINS 8 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 120.0 180.3 52.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.3 67.5 41.7 °C/W
RθJB Junction-to-board thermal resistance 63.2 101.9 25.5 °C/W
ΨJT Junction-to-top characterization parameter 17.2 9.8 0.6 °C/W
ΨJB Junction-to-board characterization parameter 62.5 100.1 25.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A 8.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.