SBVS037Q August   2003  – September 2024 TPS732

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Output Noise
      2. 6.3.2 Internal Current Limit
      3. 6.3.3 Enable Pin and Shutdown
      4. 6.3.4 Dropout Voltage
      5. 6.3.5 Reverse Current
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation With 1.7V ≤ VIN ≤ 5.5V and VEN ≥ 1.7V
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Requirements
        2. 7.2.2.2 Transient Response
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Thermal Considerations
          1. 7.4.1.1.1 Power Dissipation
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Evaluation Modules
        2. 8.1.1.2 Spice Models
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

9 Revision History

Changes from Revision P (December 2015) to Revision Q (September 2024)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed SON to VSON throughout documentGo
  • Changed VFB typical valueGo
  • Added M3 ground pin current specGo
  • Added M3 shutdown current specGo
  • Added new silicon plots to Typical Characteristics Go
  • Changed load current max source from 500mA to 250mA and dropout voltage from 250mV to 150mV in Overview sectionGo
  • Changed total ESR drops below 50nΩF to total ESR drops below 50nF × Ω in Input and Output Capacitor Requirements sectionGo
  • Added new silicon plots to Application Curves sectionGo
  • Changed Layout Guidelines sectionGo
  • Added DBV and DCQ layout figures to Layout Examples sectionGo
  • Added M3 information to Device Nomenclature Go

Changes from Revision O (August 2010) to Revision P (December 2015)

  • Changed Features bullet about NMOS topology; deleted "new"Go
  • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
  • Changed first paragraph of Description section; deleted description of NMOS topology as "new"Go
  • Changed Pin Configuration and Functions section; updated table format Go