SBVS037Q August   2003  – September 2024 TPS732

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Output Noise
      2. 6.3.2 Internal Current Limit
      3. 6.3.3 Enable Pin and Shutdown
      4. 6.3.4 Dropout Voltage
      5. 6.3.5 Reverse Current
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation With 1.7V ≤ VIN ≤ 5.5V and VEN ≥ 1.7V
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Requirements
        2. 7.2.2.2 Transient Response
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Thermal Considerations
          1. 7.4.1.1.1 Power Dissipation
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Evaluation Modules
        2. 8.1.1.2 Spice Models
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) TPS732 M3 new silicon UNIT
DRB (VSON) DCQ (SOT-223)
8 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 47.7 76 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 68.9 46.6 °C/W
RθJB Junction-to-board thermal resistance 20.6 18.1 °C/W
ψJT Junction-to-top characterization parameter 3.4 8.6 °C/W
ψJB Junction-to-board characterization parameter 20.6 17.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.5 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.