SBVS038V September 2003 – September 2024 TPS736
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIN | Input voltage range(1)(2) | 1.7 | 5.5 | V | |||
VFB | Internal reference (TPS73601) | TJ = 25°C | 1.198 | 1.204 | 1.210 | V | |
VOUT | Output voltage range (TPS73601)(3) | VFB | 5.5 - VDO | V | |||
Accuracy(1)(4) | Nominal | TJ = 25°C | –0.5 | 0.5 | % | ||
over VIN, IOUT, and T | VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 400mA | –1 | ±0.5 | 1 | |||
ΔVOUT(ΔVIN) | Line regulation (1) | VOUT(NOM) + 0.5V ≤ VIN ≤ 5.5V | 0.01 | %/V | |||
ΔVOUT(ΔIOUT) | Load regulation | 1mA ≤ IOUT ≤ 400mA | 0.002 | %/mA | |||
10mA ≤ IOUT ≤ 400mA | 0.0005 | ||||||
VDO | Dropout voltage(5) (VIN = VOUT(NOM) - 0.1V) | IOUT = 400mA | 75 | 200 | mV | ||
ZO(do) | Output impedance in dropout | 1.7V ≤ VIN ≤ VOUT + VDO | 0.25 | Ω | |||
ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | legacy silicon | 400 | 650 | 800 | mA |
3.6V ≤ VIN ≤ 4.2V, 0℃ ≤ TJ ≤ 70℃ | 500 | 800 | |||||
VOUT = 0.9 × VOUT(nom) | new silicon, M3 suffix | 500 | 800 | ||||
ISC | Short-circuit current | VOUT = 0V | 450 | mA | |||
IREV | Reverse leakage current(6) (-IIN) | VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT | 0.1 | 10 | µA | ||
IGND | Ground pin current | IOUT = 10mA (IQ) | 400 | 550 | µA | ||
IGND | Ground pin current | IOUT = 400mA | 800 | 1000 | µA | ||
ISHDN | Shutdown current (IGND) | VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V, –40°C ≤ TJ ≤ 100℃, legacy silicon | 0.02 | 1 | µA | ||
VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V, new silicon, M3 suffix | 0.02 | 1 | |||||
IFB | Feedback pin current (TPS73601) | 0.1 | 0.3 | µA | |||
PSRR | Power-supply rejection ratio (ripple rejection) | f = 100Hz, IOUT = 400mA | 58 | dB | |||
f = 10kHz, IOUT = 400mA | 37 | ||||||
VN | Output noise voltage, BW = 10Hz to 100kHz | COUT = 10µF, no CNR | 27 x VOUT | µVRMS | |||
COUT = 10µF, CNR =0.01µF | 8.5 x VOUT | ||||||
tSTR | Startup time | VOUT = 3V, RL = 30Ω, COUT = 1μF, CNR = 0.01μF | 600 | µs | |||
VEN(high) | EN pin high (enabled) | 1.7 | VIN | V | |||
VEN(low) | EN pin low (shutdown) | 0 | 0.5 | V | |||
IEN(high) | Enable pin current (enabled) | VEN = 5.5V | 0.02 | 0.1 | µA | ||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | |||
Reset, temperature decreasing | 140 | ||||||
TJ | Operating junction temperature | –40 | 125 | ℃ |