SBVS296B September   2017  – June 2018 TPS7A52-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Powering RF Components
      2.      Output Voltage Noise vs Frequency and Output Voltage
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Voltage Regulation Features
        1. 7.3.1.1 DC Regulation
        2. 7.3.1.2 AC and Transient Response
      2. 7.3.2 System Start-Up Features
        1. 7.3.2.1 Programmable Soft Start (NR/SS Pin)
        2. 7.3.2.2 Internal Sequencing
          1. 7.3.2.2.1 Enable (EN)
          2. 7.3.2.2.2 Undervoltage Lockout (UVLO) Control
          3. 7.3.2.2.3 Active Discharge
        3. 7.3.2.3 Power-Good Output (PG)
      3. 7.3.3 Internal Protection Features
        1. 7.3.3.1 Foldback Current Limit (ICL)
        2. 7.3.3.2 Thermal Protection (Tsd)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Regulation
      2. 7.4.2 Disabled
      3. 7.4.3 Current Limit Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
        1. 8.1.1.1 Input and Output Capacitor Requirements (CIN and COUT)
        2. 8.1.1.2 Noise-Reduction and Soft-Start Capacitor (CNR/SS)
        3. 8.1.1.3 Feed-Forward Capacitor (CFF)
      2. 8.1.2  Soft-Start and Inrush Current
      3. 8.1.3  Optimizing Noise and PSRR
      4. 8.1.4  Charge Pump Noise
      5. 8.1.5  Current Sharing
      6. 8.1.6  Adjustable Operation
      7. 8.1.7  Power-Good Operation
      8. 8.1.8  Undervoltage Lockout (UVLO) Operation
      9. 8.1.9  Dropout Voltage (VDO)
      10. 8.1.10 Load Transient Response
      11. 8.1.11 Reverse Current Protection Considerations
      12. 8.1.12 Power Dissipation (PD)
      13. 8.1.13 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout
      2. 10.1.2 RTK Package—High CTE Mold Compound
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
        2. 11.1.1.2 Reference Designs
        3. 11.1.1.3 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6.3 Recommended Operating Conditions

over junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input supply voltage range 1.1 6.5 V
VBIAS Bias supply voltage range(1) 3.0 6.5 V
VOUT Output voltage range(2) 0.8 5 V
VEN Enable voltage range 0 VIN V
IOUT Output current 0 2 A
CIN Input capacitor 10 22 µF
CBIAS Bias capacitor 10 µF
RPG Power-good pullup resistance 10 100 kΩ
CNR/SS NR/SS capacitor 10 nF
CFF Feed-forward capacitor 10 nF
R1 Top resistor value in feedback network for adjustable operation(3) 12.1 kΩ
R2 Bottom resistor value in feedback network for adjustable operation 160 kΩ
TJ Operating junction temperature –40 150 °C
(1) BIAS supply is required when the VIN supply is below 1.4 V. Conversely, no BIAS supply is required when the VIN supply is higher than or equal to 1.4 V. A BIAS supply helps improve dc and ac performance for VIN ≤ 2.2 V.
(2) This output voltage range does not include device accuracy or accuracy of the feedback resistors.
(3) The 12.1-kΩ resistor is selected to optimize PSRR and noise by matching the internal R1 value.