SBVS343A March   2019  – September 2019 TPS7A78

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Schematic Half-Bridge Configuration
      2.      Typical Schematic Full-Bridge Configuration
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Active Bridge Control
      2. 7.3.2 Full-Bridge (FB) and Half-Bridge (HB) Configurations
      3. 7.3.3 4:1 Switched-Capacitor Voltage Reduction
      4. 7.3.4 Undervoltage Lockout Circuits (VUVLO_SCIN) and (VUVLO_LDO_IN)
      5. 7.3.5 Dropout Voltage Regulation
      6. 7.3.6 Current Limit
      7. 7.3.7 Programmable Power-Fail Detection
      8. 7.3.8 Power-Good (PG) Detection
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disabled Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitors Requirements
      3. 8.1.3 Startup Behavior
      4. 8.1.4 Load Transient
      5. 8.1.5 Standby Power and Output Efficiency
      6. 8.1.6 Reverse Current
      7. 8.1.7 Switched-Capacitor Stage Output Impedance
      8. 8.1.8 Power Dissipation (PD)
      9. 8.1.9 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Calculating the Cap-Drop Capacitor CS
          1. 8.2.2.1.1 CS Calculations for the Typical Design
        2. 8.2.2.2 Calculating the Surge Resistor RS
          1. 8.2.2.2.1 RS Calculations for the Typical Design
        3. 8.2.2.3 Checking for the Device Maximum ISHUNT Current
          1. 8.2.2.3.1 ISHUNT Calculations for the Typical Design
        4. 8.2.2.4 Calculating the Bulk Capacitor CSCIN
          1. 8.2.2.4.1 CSCIN Calculations for the Typical Design
        5. 8.2.2.5 Calculating the PFD Pin Resistor Dividers for a Power-Fail Detection
          1. 8.2.2.5.1 PFD Pin Resistor Divider Calculations for the Typical Design
        6. 8.2.2.6 Summary of the Typical Application Design Components
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Module
        2. 11.1.1.2 SIMPLIS Model
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

11.6 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.