SBVS360A February   2020  – November 2020 TPS7B85-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Power-Good (PG)
        1. 7.3.2.1 Adjustable Power-Good (PGADJ)
      3. 7.3.3 Adjustable Power-Good Delay Timer (DELAY)
      4. 7.3.4 Sense Comparator
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
      7. 7.3.7 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Functional Mode Comparison
      2. 7.4.2 Normal Operation
      3. 7.4.3 Dropout Operation
      4. 7.4.4 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Reverse Current
      4. 8.1.4 Power Dissipation (PD)
        1. 8.1.4.1 Thermal Performance Versus Copper Area
      5. 8.1.5 Estimating Junction Temperature
      6. 8.1.6 SI Pin
        1. 8.1.6.1 Calculating the Sense Input (SI) Pin Threshold
        2. 8.1.6.2 Different Uses for the Sense Input Pin
          1. 8.1.6.2.1 Monitoring Input Voltage
          2. 8.1.6.2.2 Creating OV and UV Power-Good
          3. 8.1.6.2.3 Monitoring a Separate Supply Voltage
      7. 8.1.7 Pulling Up the SO and PG Pins to a Different Voltage
      8. 8.1.8 Power-Good
        1. 8.1.8.1 Setting the Adjustable Power-Good Threshold
        2. 8.1.8.2 Setting the Adjustable Power-Good Delay
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Package Mounting
      2. 10.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary

7.3.6 Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when the junction temperature
(TJ) of the pass transistor rises to TSD(shutdown) (typical). Thermal shutdown hysteresis assures that the device resets (turns on) when the temperature falls to TSD(reset) (typical).

The thermal time-constant of the semiconductor die is fairly short, thus the device may cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before startup completes.

For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operation above this maximum temperature causes the device to exceed its operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.