SBVS360A February   2020  – November 2020 TPS7B85-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Power-Good (PG)
        1. 7.3.2.1 Adjustable Power-Good (PGADJ)
      3. 7.3.3 Adjustable Power-Good Delay Timer (DELAY)
      4. 7.3.4 Sense Comparator
      5. 7.3.5 Undervoltage Lockout
      6. 7.3.6 Thermal Shutdown
      7. 7.3.7 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Functional Mode Comparison
      2. 7.4.2 Normal Operation
      3. 7.4.3 Dropout Operation
      4. 7.4.4 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Reverse Current
      4. 8.1.4 Power Dissipation (PD)
        1. 8.1.4.1 Thermal Performance Versus Copper Area
      5. 8.1.5 Estimating Junction Temperature
      6. 8.1.6 SI Pin
        1. 8.1.6.1 Calculating the Sense Input (SI) Pin Threshold
        2. 8.1.6.2 Different Uses for the Sense Input Pin
          1. 8.1.6.2.1 Monitoring Input Voltage
          2. 8.1.6.2.2 Creating OV and UV Power-Good
          3. 8.1.6.2.3 Monitoring a Separate Supply Voltage
      7. 8.1.7 Pulling Up the SO and PG Pins to a Different Voltage
      8. 8.1.8 Power-Good
        1. 8.1.8.1 Setting the Adjustable Power-Good Threshold
        2. 8.1.8.2 Setting the Adjustable Power-Good Delay
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Package Mounting
      2. 10.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary

8.1.2 Dropout Voltage

Dropout voltage (VDO) is defined as the input voltage minus the output voltage (VIN – VOUT) at the rated output current (IRATED), where the pass transistor is fully on. IRATED is the maximum IOUT listed in the Recommended Operating Conditions table. The pass transistor is in the ohmic or triode region of operation, and acts as a switch. The dropout voltage indirectly specifies a minimum input voltage greater than the nominal programmed output voltage at which the output voltage is expected to stay in regulation. If the input voltage falls to less than the nominal output regulation, then the output voltage falls as well.

For a CMOS regulator, the dropout voltage is determined by the drain-source on-state resistance (RDS(ON)) of the pass transistor. Therefore, if the linear regulator operates at less than the rated current, the dropout voltage for that current scales accordingly. The following equation calculates the RDS(ON) of the device.

Equation 1.