SBVS361A April   2020  – November 2020 TPS7B84-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Undervoltage Lockout
      3. 7.3.3 Thermal Shutdown
      4. 7.3.4 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Functional Mode Comparison
      2. 7.4.2 Normal Operation
      3. 7.4.3 Dropout Operation
      4. 7.4.4 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
      2. 8.1.2 Adjustable Device Feedback Resistor Selection
      3. 8.1.3 Feed-Forward Capacitor (CFF)
      4. 8.1.4 Dropout Voltage
      5. 8.1.5 Reverse Current
      6. 8.1.6 Power Dissipation (PD)
        1. 8.1.6.1 Thermal Performance Versus Copper Area
        2. 8.1.6.2 Power Dissipation vs Ambient Temperature
      7. 8.1.7 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Package Mounting
      2. 10.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary

6.5 Electrical Characteristics

specified at TJ = –40°C to +150°C, VIN = 13.5 V,  IOUT = 0 mA, COUT = 2.2 µF, 1 mΩ < COUT ESR < 2 Ω,  CIN = 1 µF, and VEN = 2 V (unless otherwise noted); typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOUT Regulated output accuracy VIN = VOUT + 500 mV to
40 V,
IOUT = 100 µA to 150 mA (2) (1) 		TJ = 25ºC –0.5 0.5 %
TJ = –40°C to +150ºC –0.75 0.75
VOUT Regulated output accuracy DCY VIN = VOUT + 500 mV to
40 V,
IOUT = 100 µA to 150 mA (2) (1) 		TJ = 25ºC –0.75 0.75 %
TJ = –40°C to +150ºC –1 1
ΔVOUT(ΔVIN) Line regulation Change in percent of output voltage VIN = VOUT + 500 mV to 40 V, 
IOUT = 100 µA		 0.2 %
ΔVOUT(ΔIOUT) Load regulation Change in percent of output voltage VIN = VOUT + 500 mV, IOUT = 100 µA to
150 mA, VOUT ≥ 3.3 V 		0.2
ΔVOUT(ΔIOUT) Load regulation (Adjustable output only) Change in percent of output voltage VIN = VOUT + 500 mV, IOUT = 100 µA to 150 mA, VOUT < 3.3 V 0.3 %
ΔVOUT Load transient response settling time(4) (5) COUT = 10 µF COUT = 10 µF 100 µs
Load transient response
overshoot, undershoot(5) 		IOUT = 45 mA to 105 mA –2% 10% %VOUT
IOUT = 0 mA to 150 mA –10%
IQ Quiescent current VIN = VOUT + 500 mV to
40 V, IOUT = 0 mA (2)
TJ = 25ºC
 		 18 21 µA
TJ = –40°C to +150ºC 26
IOUT = 500 µA (2) TJ = –40°C to +150ºC 35
ISHUTDOWN Shutdown supply current (IGND) VEN = 0 V TJ = 25ºC 2.5 µA
TJ = –40°C to +150ºC 4
VDO Dropout voltage (DCY package) IOUT ≤ 1 mA, VOUT ≥ 3.3 V, VIN = VOUT(NOM) x 0.95 47 mV
IOUT = 105 mA, VOUT ≥ 3.3 V, VIN = VOUT(NOM) 130 180
IOUT = 150 mA, VOUT ≥ 3.3 V, VIN = VOUT(NOM) 160 230
VDO Dropout voltage (fixed output DRB package) IOUT ≤ 1 mA, VOUT ≥ 3.3 V, VIN = VOUT(NOM) x 0.95 43 mV
IOUT = 105 mA, VOUT ≥ 3.3 V, VIN = VOUT(NOM) 125 175
IOUT = 150 mA, VOUT ≥ 3.3 V, VIN = VOUT(NOM) 155 225
VDO Dropout voltage adjustable output DRB package IOUT ≤ 1 mA, VIN = 3 V, VFB = 0.61 V(3) 43 mV
Dropout voltage adjustable output IOUT = 105 mA, VIN = 3 V, VFB = 0.61 V(3) 140 195
IOUT = 150 mA, VIN = 3 V, VFB = 0.61 V(3) 175 245
VFB Feedback voltage Reference voltage for FB 0.645 0.65 0.655 V
IFB Feedback current -10 10 nA
VUVLO(RISING) Rising input supply UVLO VIN rising 2.6 2.7 2.82 V
VUVLO(FALLING) Falling input supply UVLO VIN falling 2.38 2.5 2.6 V
VUVLO(HYST) VUVLO hysteresis 230 mV
VIL Enable logic input low level 0.7 V
VIH Enable logic input high level 2 V
IEN EN pin current VEN = VIN = 13.5 V 50 nA
ICL Output current limit VIN = VOUT(nom) + 1 V, VOUT short to
90% x VOUT(NOM) 		180 220 260 mA
PSRR Power-supply ripple rejection VIN - VOUT = 500 mV, frequency = 1 kHz,
IOUT = 150 mA		 55 dB
Vn Output noise voltage VOUT = 3.3 V, BW = 10 Hz to 100 kHz 280 µVRMS
TSD(SHUTDOWN) Junction shutdown temperature 175 °C
TSD(HYST) Hysteresis of thermal shutdown 20 °C
(1) Power dissipation is limited to 2W for IC production testing purposes. The power dissipation can be higher during normal operation. Please see the thermal dissipation section for more information on how much power the device can dissipate while maintaining a junction temperature below 150℃.
(2) For adjustable devices this parameter is tested in unity gain, so resistor divider tolerances and current is not included.
(3) Dropout is not measured for VIN ≤  3 V.
(4) The settling time is measured from when IOUT is stepped from 45mA to 105 mA to when the output voltage recovers to
VOUT = VOUT(nom) - 5 mV.
(5) This specification is specified by design.