The parametric data for the TMUX582F-SEP passes up to 30 krad(Si) HDR and LDR TID irradiation. The drifts of the electrical parameters through HDR and LDR were within the data sheet limits.

Overall, the TMUX582F-SEP showed a strong degree of hardness to HDR and LDR TID irradiation up to 30 krad(Si). The measurements taken post-irradiation for each sample set showed a marginal shift for most parameters at each dose level. The parameters that did show a greater degree of change between pre- and post-irradiation were still within the electrical performance characteristics specified in the data sheet electrical parameters. In accordance with MIL-STD-883K section 3.13.1.1 this device does not exhibit ELDRS effects due to every spec parameter post irradiation remaining below the pre-irradiation electrical specification limits at a low dose rate. For the data sheet electrical parameters and associated tests, see TMUX582F-SEP Datasheet.

See Section 6 for full HDR characterization report up to 30krad(Si) with a dynamic S1 pin input.

See Section 7 for ELDRS report at 30krad(Si) comparing the LDR and HDR data of the dynamic S1 pin bias scheme.

See Section 8 for HDR report of the S1=22V case at 30krad(Si) which will be used for RLATs going forward.

See Section 9 for HDR report of the S1=60V case at 30krad(Si) which was added to show the device fault performance.