SCDS263E
September 2009 – July 2024
TS3USB221E
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Dynamic Electrical Characteristics, VCC = 3.3 V ±10%
5.7
Dynamic Electrical Characteristics, VCC = 2.5 V ±10%
5.8
Switching Characteristics, VCC = 3.3 V ±10%
5.9
Switching Characteristics, VCC = 2.5 V ±10%
5.10
Typical Characteristics
Parameter Measurement Information
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.3.1
Low Power Mode
6.4
Device Functional Modes
7
Application and Implementation
7.1
Application Information
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.3
Application Curves
7.3
Power Supply Recommendations
7.4
Layout
7.4.1
Layout Guidelines
7.4.2
Layout Example
8
Device and Documentation Support
8.1
Documentation Support
8.1.1
Related Documentation
8.2
Receiving Notification of Documentation Updates
8.3
Support Resources
8.4
Trademarks
8.5
Electrostatic Discharge Caution
8.6
Glossary
9
Revision History
10
Mechanical, Packaging, and Orderable Information
1
Features
V
CC
operation of 2.3V to 3.6V
Switch I/OS accept signals up to 5.5V
1.8V compatible control-pin inputs
Low-power mode when
OE
is disabled (1μA)
r
ON
= 6Ω maximum
Δr
ON
= 0.2Ω typical
C
IO(ON)
= 7pf maximum
Low power consumption (30μA maximum)
ESD performance tested:
7000V human body model per JEDEC JS-001
1000V charged-device model per JEDEC JS-002
ESD performance I/O port to GND:
12kV human body model (JEDEC JS-001)
±7kV contact discharge (IEC 61000-4-2)
High bandwidth (1GHz typical)