SCDS263E September   2009  – July 2024 TS3USB221E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3 V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5 V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3 V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5 V ±10%
    10. 5.10 Typical Characteristics
  7.   Parameter Measurement Information
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Low Power Mode
    4. 6.4 Device Functional Modes
  9. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information

9 Revision History

Changes from Revision D (September 2019) to Revision E (July 2024)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed ESD HBM performance testing standard from: JESD 22 to: JEDEC JS-001Go
  • Changed ESD CDM performance testing standard from: JESD22-C101 to: JEDEC JS-002Go
  • Added tablenote to the Data input/output voltage parameterGo
  • Changed RSE (UQFN) junction-to-ambient thermal resistance value from: 169.8°C/W to: 204.8°C/WGo
  • Changed RSE (UQFN) junction-to-case (top) thermal resistance value from: 84.7°C/W to: 118.1°C/WGo
  • Changed RSE (UQFN) junction-to-board thermal resistance value from: 94.9°C/W to: 121.5°C/WGo
  • Changed RSE (UQFN) junction-to-top characterization parameter value from: 5.7°C/W to: 13.9°C/WGo
  • Changed RSE (UQFN) junction-to-board characterization parameter value from: 94.9°C/W to: 121.2°C/WGo
  • Changed the VIK value in the Electrical Characteristics table from: –1.8V maximum to: –1.8V minimumGo
  • Changed the graphs in the Typical Characteristics sectionGo

Changes from Revision C (April 2015) to Revision D (September 2019)

  • Changed VCC Operation FROM 2.5 V to 3.3 V TO 2.3 V to 3.6 VGo

Changes from Revision B (July 2012) to Revision C (April 2015)

  • Added Pin Configuration and Functions section, ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
  • Removed Ordering Information tableGo

Changes from Revision A (February 2010) to Revision B (July 2012)

  • Updated TOP-SIDE MARKING for RSE package in Ordering Information tableGo