SCDS263E September   2009  – July 2024 TS3USB221E

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3 V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5 V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3 V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5 V ±10%
    10. 5.10 Typical Characteristics
  7.   Parameter Measurement Information
  8. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Low Power Mode
    4. 6.4 Device Functional Modes
  9. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. Revision History
  12. 10Mechanical, Packaging, and Orderable Information

Description

The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB221E is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).

The TS3USB221E integrates ESD protection cells on all pins, is available in a SON package (3mm ×
3mm) as well as in a tiny μQFN package (2mm × 1.5mm) and is characterized over the free-air temperature range from –40°C to 85°C.

Package Information
PART NUMBER PACKAGE(1) PACKAGE SIZE(2)
TS3USB221E DRC (VSON, 10) 3mm × 3mm
RSE (UQFN, 10) 2mm × 1.5mm
For all available packages, see the orderable addendum at the end of the data sheet.
The package size (length × width) is a nominal value and includes pins, where applicable.
TS3USB221E Block DiagramBlock Diagram
TS3USB221E Simplified Schematic, Each
                        FET Switch (SW)
EN is the internal enable signal applied to the switch.
Simplified Schematic, Each FET Switch (SW)