SCDS420E September   2020  – July 2024 TMUX6219

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 5.7  ±15 V Dual Supply: Switching Characteristics 
    8. 5.8  36 V Single Supply: Electrical Characteristics 
    9. 5.9  36 V Single Supply: Switching Characteristics 
    10. 5.10 12 V Single Supply: Electrical Characteristics 
    11. 5.11 12 V Single Supply: Switching Characteristics 
    12. 5.12 +5 V / -8 V Dual Supply: Electrical Characteristics 
    13. 5.13 +5 V / -8 V Dual Supply: Switching Characteristics 
    14. 5.14 ±5 V Dual Supply: Electrical Characteristics 
    15. 5.15 ±5 V Dual Supply: Switching Characteristics 
    16. 5.16 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  Transition Time
    5. 6.5  tON(EN) and tOFF(EN)
    6. 6.6  Break-Before-Make
    7. 6.7  tON (VDD) Time
    8. 6.8  Propagation Delay
    9. 6.9  Charge Injection
    10. 6.10 Off Isolation
    11. 6.11 Crosstalk
    12. 6.12 Bandwidth
    13. 6.13 THD + Noise
    14. 6.14 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail to Rail Operation
      3. 7.3.3 1.8V Logic Compatible Inputs
      4. 7.3.4 Fail-Safe Logic
      5. 7.3.5 Latch-Up Immune
      6. 7.3.6 Ultra-Low Charge Injection
    4. 7.4 Device Functional Modes
    5. 7.5 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Power Amplifier Gate Driver
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
      4. 8.2.4 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

5.10 12 V Single Supply: Electrical Characteristics 

VDD = +12 V ± 10%, VSS = 0 V, GND = 0 V (unless otherwise noted) 
Typical at VDD = +12 V, VSS = 0 V, TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0 V to 10 V
ID = –10 mA
Refer to On-Resistance		 25°C 4.6 6 Ω
–40°C to +85°C 7.5 Ω
–40°C to +125°C 8.4 Ω
ΔRON On-resistance mismatch between channels VS = 0 V to 10 V
ID = –10 mA
Refer to On-Resistance		 25°C 0.08 0.2 Ω
–40°C to +85°C 0.32 Ω
–40°C to +125°C 0.35 Ω
RON FLAT On-resistance flatness VS = 0 V to 10 V
IS = –10 mA
Refer to On-Resistance		 25°C 1.2 2 Ω
–40°C to +85°C 2.2 Ω
–40°C to +125°C 2.4 Ω
RON DRIFT On-resistance drift VS = 6 V, IS = –10 mA
Refer to On-Resistance		 –40°C to +125°C 0.017 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 13.2 V, VSS = 0 V
Switch state is off
VS = 10 V / 1 V
VD = 1 V / 10 V
Refer to Off-Leakage Current		 25°C –0.5 0.05 0.5 nA
–40°C to +85°C –2 2 nA
–40°C to +125°C –30 30 nA
ID(OFF) Drain off leakage current(1) VDD = 13.2 V, VSS = 0 V
Switch state is off
VS = 10 V / 1 V
VD = 1 V / 10 V
Refer to Off-Leakage Current		 25°C –0.5 0.05 0.5 nA
–40°C to +85°C –3 3 nA
–40°C to +125°C –50 50 nA
IS(ON)
ID(ON)		 Channel on leakage current(2) VDD = 13.2 V, VSS = 0 V
Switch state is on
VS = VD = 10 V or 1 V
Refer to On-Leakage Current		 25°C –1.5 0.05 1.5 nA
–40°C to +85°C –3 3 nA
–40°C to +125°C –40 40 nA
LOGIC INPUTS (SEL / EN pins)
VIH Logic voltage high –40°C to +125°C 1.3
36

 V
VIL Logic voltage low –40°C to +125°C 0 0.8 V
IIH Input leakage current –40°C to +125°C 0.005 2 µA
IIL Input leakage current –40°C to +125°C –1 –0.005 µA
CIN Logic input capacitance –40°C to +125°C 3 pF
POWER SUPPLY
IDD VDD supply current VDD = 13.2 V, VSS = 0 V
Logic inputs = 0 V, 5 V, or VDD		 25°C 10 35 µA
–40°C to +85°C   45 µA
–40°C to +125°C   55 µA
(1) When VS is 10 V, VD is 1 V, or when VS is 1 V, VD is 10 V.
(2) When VS is at a voltage potential, VD is floating, or when VD is at a voltage potential, VS is floating.