SCDS450B November   2022  – September 2024 TMUX6201 , TMUX6202

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Thermal Information
    4. 6.4  Recommended Operating Conditions
    5. 6.5  Source or Drain Continuous Current
    6. 6.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 6.7  ±15 V Dual Supply: Switching Characteristics 
    8. 6.8  36 V Single Supply: Electrical Characteristics 
    9. 6.9  36 V Single Supply: Switching Characteristics 
    10. 6.10 12 V Single Supply: Electrical Characteristics 
    11. 6.11 12 V Single Supply: Switching Characteristics 
    12. 6.12 ±5 V Dual Supply: Electrical Characteristics 
    13. 6.13 ±5 V Dual Supply: Switching Characteristics 
    14. 6.14 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  tON and tOFF Time
    5. 7.5  tON (VDD) Time
    6. 7.6  Propagation Delay
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Bandwidth
    10. 7.10 THD + Noise
    11. 7.11 Power Supply Rejection Ratio (PSRR)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8 V Logic Compatible Inputs
      4. 8.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 8.3.5 Fail-Safe Logic
      6. 8.3.6 Latch-Up Immune
      7. 8.3.7 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 TIA Feedback Gain Switch
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.6 Latch-Up Immune

Latch-up is a condition where a low impedance path is created between a supply pin and ground. This condition is caused by a trigger (current injection or over-voltage), but once activated, the low impedance path remains even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic damage due to excessive current levels. The Latch-up condition typically requires a power cycle to eliminate the low impedance path.

The TMUX620x family of devices are constructed on Silicon on Insulator (SOI) based process where an oxide layer is added between the PMOS and NMOS transistor of each CMOS switch to prevent parasitic structures from forming. The oxide layer is also known as an insulating trench and prevents triggering of latch up events due to over-voltage or current injections. The Latch-Up immunity feature allows the TMUX620x family of switches and multiplexers to be used in harsh environments.