SCDS476 June   2024 TMUX1308A-Q1 , TMUX1309A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Thermal Information: TMUX1308A-Q1
    4. 6.4  Thermal Information: TMUX1309A-Q1
    5. 6.5  Recommended Operating Conditions
    6. 6.6  Electrical Characteristics
    7. 6.7  Logic and Dynamic Characteristics
    8. 6.8  Timing Characteristics
    9. 6.9  Injection Current Coupling
    10. 6.10 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  Transition Time
    5. 7.5  Break-Before-Make
    6. 7.6  tON(EN) and tOFF(EN)
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Crosstalk
    10. 7.10 Bandwidth
    11. 7.11 Injection Current Control
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8V Logic Compatible Inputs
      4. 8.3.4 Fail-Safe Logic
      5. 8.3.5 High-Impedance Optimization
      6. 8.3.6 Injection Current Control
        1. 8.3.6.1 TMUX13xxA-Q1 is Powered, Channel is Unselected, and the Input Signal is Greater Than VDD (VDD = 5V, VINPUT = 5.5V)
        2. 8.3.6.2 TMUX13xxA-Q1 is Powered, Channel is Selected, and the Input Signal is Greater Than VDD (VDD = 5V, VINPUT = 5.5V)
        3. 8.3.6.3 TMUX13xxA-Q1 is Unpowered and the Input Signal has a Voltage Present (VDD = 0V, VINPUT = 3V)
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Short To Battery Protection
      4. 9.2.4 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information
  13. 12Revision History

7.7 Charge Injection

The TMUX1308A-Q1 and TMUX1309A-Q1 device have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 7-7 shows the setup used to measure charge injection from source (Sx) to drain (D).

TMUX1308A-Q1 TMUX1309A-Q1 Charge-Injection Measurement SetupFigure 7-7 Charge-Injection Measurement Setup