SCES517K December   2003  – November 2023 SN74AVC8T245

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics, VCCA = 1.2 V
    7. 5.7  Switching Characteristics, VCCA = 1.5 V ± 0.1 V
    8. 5.8  Switching Characteristics, VCCA = 1.8 V ± 0.15 V
    9. 5.9  Switching Characteristics, VCCA = 2.5 V ± 0.2 V
    10. 5.10 Switching Characteristics, VCCA = 3.3 V ± 0.3 V
    11. 5.11 Operating Characteristics
    12. 5.12 Typical Total Static Power Consumption (ICCA + ICCB)
    13. 5.13 Typical Characteristics
  7.   Parameter Measurement Information
  8. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Fully Configurable Dual-Rail Design
      2. 6.3.2 Support High-Speed Translation
      3. 6.3.3 Ioff Supports Partial-Power-Down Mode Operation
      4. 6.3.4 Balanced High-Drive CMOS Push-Pull Outputs
      5. 6.3.5 Vcc Isolation
    4. 6.4 Device Functional Modes
  9. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. 9 Revision History
  12. 10Mechanical, Packaging, and Orderable Information

8.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.