SCES677F September   2006  – June 2024 SN74LVC1T45-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics: VCCA = 1.8V ±0.15V
    7. 5.7  Switching Characteristics: VCCA = 2.5V ±0.2V
    8. 5.8  Switching Characteristics: VCCA = 3.3V ±0.3V
    9. 5.9  Switching Characteristics: VCCA = 5V ±0.5V
    10. 5.10 Typical Characteristics
  7.   Parameter Measurement Information
  8. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Glitch-Free Power Supply Sequencing
    4. 6.4 Device Functional Modes
  9.   Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Enable Times
    2. 7.2 Typical Applications
      1. 7.2.1 Unidirectional Logic Level-Shifting Application
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Bidirectional Logic Level-Shifting Application
        1. 7.2.2.1 Detailed Design Procedure
        2. 7.2.2.2 Application Curves
    3.     35
    4. 7.3 Power Supply Recommendations
    5. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  11. 8Revision History
  12. 9Mechanical, Packaging, and Orderable Information

Electrostatic Discharge Caution

SN74LVC1T45-Q1 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.