SCLK034 December   2023 SN54SC2T74-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagram
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8. 5Appendix: HDR TID Report Data

2.4 Test Configuration and Condition

A step stress (10k, 20k, 30k and 50k) test method was used to determine the TID hardness level. That is, after a predetermined TID level was reached, an electrical test was performed on a given sample of parts to verify that the units are within specified data sheet electrical test limits. The eight RLAT units were irradiated to 30 krad(Si), parametrically tested on ATE, and then were annealed at 25ºC for 50 hours. The units were then put through parametric testing once more on the ATE.

Table 2-1 lists the serialized samples used for TID characterization.

Table 2-1 HDR Device Information
Control GroupHDR = 197.21 rad(Si)/s
Total Samples: 3Total Samples: 31
Exposure Levels
0 krad (Si)10 krad (Si)20 krad(Si)30 krad(Si)50 krad (Si)
BiasedBiasedBiasedBiasedBiased + 50 hour annealBiased
1 - 34 - 89 - 1314 - 2122 - 2930 - 34