SCLS925B May   2023  – April 2024 SN74LV1T04-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics - 1.8V VCC
    7. 5.7  Switching Characteristics - 2.5V VCC
    8. 5.8  Switching Characteristics - 3.3V VCC
    9. 5.9  Switching Characteristics - 5.0V VCC
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Balanced CMOS 3-State Outputs
      2. 7.3.2 Clamp Diode Structure
      3. 7.3.3 LVxT Enhanced Input Voltage
        1. 7.3.3.1 Down Translation
        2. 7.3.3.2 Up Translation
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) SN74LV1T04-Q1 UNIT
DBV (SOT-23) DCK (SC70)
5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance  278.0 293.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 180.5 208.8 °C/W
RθJB Junction-to-board thermal resistance 184.4 180.6 °C/W
ΨJT Junction-to-top characterization parameter 115.4 120.6 °C/W
ΨJB Junction-to-board characterization parameter 183.4 179.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.