SGLS148F December   2002  – June 2024 ULQ2003A-Q1 , ULQ2004A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics, ULQ2003AT and ULQ2003AQ
    6. 5.6 Electrical Characteristics, ULQ2004AT
    7. 5.7 Switching Characteristics, ULQ2003A and ULQ2004A
    8. 5.8 Dissipation Ratings
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inductive Load Drive
      2. 7.4.2 Resistive Load Drive
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Current
        2. 8.2.2.2 Low-Level Output Voltage
        3. 8.2.2.3 Power Dissipation and Temperature
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Related Links
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

8.2.2.3 Power Dissipation and Temperature

The number of coils driven is dependent on the coil current and on-chip power dissipation. The number of coils driven can be determined by Figure 8-2.

For a more accurate determination of number of coils possible, use Equation 2 to calculate ULQ200xA-Q1 device on-chip power dissipation PD:

Equation 2. ULQ2003A-Q1 ULQ2004A-Q1

where

  • N is the number of channels active together
  • VOLi is the OUTi pin voltage for the load current ILi. This is the same as VCE(SAT)

To ensure reliability of ULQ200xA-Q1 device and the system, the on-chip power dissipation must be lower that or equal to the maximum allowable power dissipation (PD(MAX)) dictated by Equation 3.

Equation 3. ULQ2003A-Q1 ULQ2004A-Q1

where

  • TJ(max) is the target maximum junction temperature
  • TA is the operating ambient temperature
  • RθJA is the package junction to ambient thermal resistance

Limit the die junction temperature of the ULQ200xA-Q1 device to less than 125°C. The IC junction temperature is directly proportional to the on-chip power dissipation.