SGLS148F December   2002  – June 2024 ULQ2003A-Q1 , ULQ2004A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics, ULQ2003AT and ULQ2003AQ
    6. 5.6 Electrical Characteristics, ULQ2004AT
    7. 5.7 Switching Characteristics, ULQ2003A and ULQ2004A
    8. 5.8 Dissipation Ratings
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inductive Load Drive
      2. 7.4.2 Resistive Load Drive
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Current
        2. 8.2.2.2 Low-Level Output Voltage
        3. 8.2.2.3 Power Dissipation and Temperature
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Related Links
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) ULQ2003A-Q1, ULQ2004A-Q1 ULQ2003A-Q1 UNIT
D (SOIC) PW (TSSOP) DYY (SOT)
16 PINS 16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance

87.9

112.9

119.4

°C/W
RθJC(top) Junction-to-case (top) thermal resistance

49.4

49.2

56.9

°C/W
RθJB Junction-to-board thermal resistance

49.1

58.1

52.3

°C/W
ψJT Junction-to-top characterization parameter

11.9

9.1

2.8

°C/W
ψJB Junction-to-board characterization parameter

48.6

57.6

51.9

°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.