SGLS148F December   2002  – June 2024 ULQ2003A-Q1 , ULQ2004A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics, ULQ2003AT and ULQ2003AQ
    6. 5.6 Electrical Characteristics, ULQ2004AT
    7. 5.7 Switching Characteristics, ULQ2003A and ULQ2004A
    8. 5.8 Dissipation Ratings
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inductive Load Drive
      2. 7.4.2 Resistive Load Drive
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Current
        2. 8.2.2.2 Low-Level Output Voltage
        3. 8.2.2.3 Power Dissipation and Temperature
      3. 8.2.3 Application Curve
    3. 8.3 System Examples
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Related Links
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.2 ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per AEC Q100-002(1)±2000V
Charged-device model (CDM), per AEC Q100-011±500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.