specified for new chip at
TJ = –40°C to +150°C, VIN = 13.5V , IOUT =
100μA, COUT = 2.2µF, 1mΩ < COUT ESR < 2Ω, and
CIN = 1µF (unless otherwise noted)
Figure 5-1 Output Voltage vs Junction Temperature
(Legacy Chip) Figure 5-3 Output Voltage vs Input Voltage (Legacy Chip) Figure 5-5 Line Regulation vs
VIN (New Chip) Figure 5-7 Line
Regulation vs VIN (New Chip) Figure 5-9 Line Regulation at 50mA
(New Chip) Figure 5-11 Output Current vs Junction Temperature
(Legacy Chip) Figure 5-13 Current Consumption vs Output Current
(Legacy
Chip) Figure 5-15 Quiescent Current
(IQ) vs VIN (New Chip) Figure 5-17 Ground Current at 100mA
(New Chip) Figure 5-19 Dropout Voltage vs Output Current (Legacy Chip) Figure 5-21 Power-Supply Ripple Rejection vs Frequency (Legacy Chip) Figure 5-23 Power-Supply Ripple Rejection vs Frequency (Legacy Chip)
COUT = 10µF (X7R 50V), IOUT =
500mA, VOUT = 5V |
Figure 5-25 Power-Supply Ripple
Rejection vs Frequency and VIN (New Chip)
COUT = 10µF (X7R 50V), VOUT =
3.3V |
|
Figure 5-27 Noise vs Frequency (Legacy
Chip)
VOUT = 5V, IOUT = 100mA,
VIN = 5.5V to 6.5V, rise time = 1µs |
Figure 5-29 Line Transients (New
Chip)
VOUT = 5V, IOUT = 0mA to
100mA, slew rate = 1A/µs, COUT = 10µF |
Figure 5-31 Load
Transient, No Load to 100mA Rising Edge (New Chip)
VOUT = 5V, IOUT = 45mA to
105mA, slew rate = 0.1A/µs, COUT = 10µF |
Figure 5-33 Load
Transient, 45mA to 105mA Rising Edge
(New
Chip)
VOUT = 5V, IOUT = 0mA to
150mA, slew rate = 1A/µs, COUT = 10µF |
Figure 5-35 Load
Transient, No Load to 150mA Rising Edge (New Chip)
VOUT = 5V, IOUT = 0mA to
500mA, slew rate = 1A/µs, COUT = 10µF |
Figure 5-37 Load
Transient, No Load to 500mA
(New Chip)
VIN = VOUT + 1V,
VOUT = 90% × VOUT(NOM) |
Figure 5-39 Output Current Limit vs
Temperature (New Chip)Figure 5-41 Undervoltage Lockout
(UVLO) Threshold vs Temperature (New Chip) Figure 5-43 Thermal Shutdown (New
Chip) Figure 5-45 ESR
Stability vs Load Capacitance (Legacy Chip) Figure 5-2 Output Voltage vs Junction Temperature
(Legacy Chip) Figure 5-4 Output Accuracy vs
Temperature (New Chip) Figure 5-6 Line
Regulation vs VIN (New Chip) Figure 5-8 Load Regulation vs
IOUT (New Chip) Figure 5-10 Line Regulation at 100mA
(New Chip) Figure 5-12 Current Consumption vs Output Current
(Legacy
Chip) Figure 5-14 Quiescent Current
(IQ) vs VIN
(New Chip) Figure 5-16 Ground Current
(IGND) vs IOUT (New Chip) Figure 5-18 Ground Current at 500µA
(New Chip) Figure 5-20 Dropout Voltage
(VDO) vs IOUT (New Chip) Figure 5-22 Power-Supply Ripple Rejection vs Frequency (Legacy Chip)
COUT = 10µF (X7R 50V), VOUT =
5V |
Figure 5-24 Power-Supply Ripple
Rejection vs Frequency and IOUT (New Chip)
COUT = 10µF (X7R 50V), VOUT =
5V |
Figure 5-26 Noise vs Frequency (Legacy
Chip)
VOUT = 5V, IOUT = 1mA,
VIN = 13.5V to 45V, slew rate =
2.7V/µs |
Figure 5-28 Line Transients (New
Chip)
VOUT = 5V, IOUT = 0mA to
100mA, slew rate = 1A/µs, COUT = 10µF |
Figure 5-30 Load Transient, No Load to
100mA (New Chip)
VOUT = 5V, IOUT = 45mA to
105mA, slew rate = 0.1A/µs, COUT = 10µF |
Figure 5-32 Load Transient, 45mA to
105mA
(New Chip)
VOUT = 5V, IOUT = 0mA to
150mA, slew rate = 1A/µs, COUT = 10µF |
Figure 5-34 Load
Transient, No Load to 150mA
(New Chip)
VOUT = 5V, IOUT = 150mA to
350mA, slew rate = 0.1A/µs, COUT =
10µF |
Figure 5-36 Load
Transient, 150mA to 350mA
(New Chip)
VOUT = 5V, IOUT = 0mA to
500mA, slew rate = 1A/µs, COUT = 10µF |
Figure 5-38 Load
Transient, No Load to 500mA Rising Edge (New Chip)
VIN = VOUT + 1V,
VOUT = 90% × VOUT(NOM) |
Figure 5-40 Start-Up Plot Inrush
Current (New Chip)Figure 5-42 Output Voltage vs Injected
Current
(New Chip) Figure 5-44 ESR
Stability vs Load Current (Legacy Chip) Figure 5-46 Stability, ESR vs
COUT (New Chip)