SLAAEM1 June   2024 MSPM0C1104 , MSPM0C1104 , MSPM0L1105 , MSPM0L1105

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2System Architecture Introduction
  6. 3Hardware Design Introduction
    1. 3.1 Power Supply Circuit
    2. 3.2 Drive Circuit
    3. 3.3 Sampling Circuit
    4. 3.4 Main Controller Circuit
    5. 3.5 Control System Introduction
      1. 3.5.1 Drive Method
      2. 3.5.2 Control Method
  7. 4Software Design Introduction
    1. 4.1 Parameters Initialization
    2. 4.2 Direction Setup
    3. 4.3 Timer Interrupt
    4. 4.4 Closed Loop Controller
  8. 5Evaluation

3.2 Drive Circuit

The gate drive and MOSFET in drive circuit are both sourced from Texas Instruments. The LM2101 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. And the CSD18512Q5B is 40V, 1.3mΩ, 5mm × 6mm NexFET™ power MOSFET, designed to minimize losses in power conversion applications. The circuit parameters are designed based on the application circuit from the LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO Data Sheet.

Drive Circuit Figure 3-3 Drive Circuit