SLAK024A January   2019  – March 2024 TPS73801-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
  7. 4Irradiation Facility and Setup
  8. 5Test Setup and Procedures
  9. 6Single-Event-Burnout (SEB) and Single-Event-Latch-up (SEL)
    1. 6.1 Single-Event-Burnout (SEB)
    2. 6.2 Single-Event-Latch-up (SEL)
  10. 7SET Results
  11. 8Summary
  12.   A Confidence Interval Calculations
  13.   B References
  14.   C Revision History

6.1 Single-Event-Burnout (SEB)

The TPS73801-SEP was tested for SEB at 50mA (load) and room temperature (RT). While the output voltage was held on regulation at 12V, the input voltage was set at 15V to test the LDO for any burnout. Data was collected at VIN = 15, VOUT = 12V and RT. Summary for SEB data collection and conditions is shown on Table 6-1.

Flux of 105 and fluences of 107 were used for the SEB characterization, using47Ag at incident. The distance between the exit port and the DUT was set to 40mm on all runs. Not a single burnout was observed while operating the TPS73801-SEP at input voltage of 15V. The cross section was calculated using the MTBF method described in Appendix A.

Table 6-1 Summary of the TPS73801-SEP SEB Conditions and Results
Run NumberUnit NumberIon TypeAngle of Incidence (°)LETEFF (MeV × cm2/ mg)Flux (ions/cm2× s)Fluence (Number of ions / cm2)Vin (V)Vout (V)Load (A)SEB?σPERCASE (cm2/ device)
11Ag0431.00E+051.00E+07152.550mANo2.31E-08

The SEB upper bound cross section is:

σSEB ≤ 2.31 × 10–8 cm2/ device at LET ≤ 43 MeV-cm2/ mg, T = 25°C and 95% confidence.