SLASEN5 October   2017 MSP432E401Y

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Characteristics
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram
    2. 4.2 Pin Attributes
    3. 4.3 Signal Descriptions
    4. 4.4 GPIO Pin Multiplexing
    5. 4.5 Buffer Type
    6. 4.6 Connections for Unused Pins
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Recommended DC Operating Conditions
    5. 5.5  Recommended GPIO Operating Characteristics
    6. 5.6  Recommended Fast GPIO Pad Operating Conditions
    7. 5.7  Recommended Slow GPIO Pad Operating Conditions
    8. 5.8  GPIO Current Restrictions
    9. 5.9  I/O Reliability
    10. 5.10 Current Consumption
    11. 5.11 Peripheral Current Consumption
    12. 5.12 LDO Regulator Characteristics
    13. 5.13 Power Dissipation
    14. 5.14 Thermal Resistance Characteristics, 128-Pin PDT (TQFP) Package
    15. 5.15 Timing and Switching Characteristics
      1. 5.15.1  Load Conditions
      2. 5.15.2  Power Supply Sequencing
        1. 5.15.2.1 Power and Brownout
          1. 5.15.2.1.1 VDDA Levels
          2. 5.15.2.1.2 VDD Levels
          3. 5.15.2.1.3 VDDC Levels
          4. 5.15.2.1.4 VDD Glitch Response
          5. 5.15.2.1.5 VDD Droop Response
      3. 5.15.3  Reset Timing
      4. 5.15.4  Clock Specifications
        1. 5.15.4.1 PLL Specifications
          1. 5.15.4.1.1 PLL Configuration
        2. 5.15.4.2 PIOSC Specifications
        3. 5.15.4.3 Low-Frequency Oscillator Specifications
        4. 5.15.4.4 Hibernation Low-Frequency Oscillator Specifications
        5. 5.15.4.5 Main Oscillator Specifications
        6. 5.15.4.6 Main Oscillator Specification WIth ADC
        7. 5.15.4.7 System Clock Characteristics With USB Operation
      5. 5.15.5  Sleep Modes
      6. 5.15.6  Hibernation Module
      7. 5.15.7  Flash Memory
      8. 5.15.8  EEPROM
      9. 5.15.9  Input/Output Pin Characteristics
        1. 5.15.9.1 Types of I/O Pins and ESD Protection
          1. 5.15.9.1.1 Hibernate WAKE pin
          2. 5.15.9.1.2 Nonpower I/O Pins
      10. 5.15.10 External Peripheral Interface (EPI)
      11. 5.15.11 Analog-to-Digital Converter (ADC)
      12. 5.15.12 Synchronous Serial Interface (SSI)
      13. 5.15.13 Inter-Integrated Circuit (I2C) Interface
      14. 5.15.14 Ethernet Controller
        1. 5.15.14.1 DC Characteristics
        2. 5.15.14.2 Clock Characteristics for Ethernet
        3. 5.15.14.3 AC Characteristics
      15. 5.15.15 Universal Serial Bus (USB) Controller
      16. 5.15.16 Analog Comparator
      17. 5.15.17 Pulse-Width Modulator (PWM)
      18. 5.15.18 Emulation and Debug
  6. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Arm Cortex-M4F Processor Core
      1. 6.3.1 Processor Core
      2. 6.3.2 System Timer (SysTick)
      3. 6.3.3 Nested Vectored Interrupt Controller (NVIC)
      4. 6.3.4 System Control Block (SCB)
      5. 6.3.5 Memory Protection Unit (MPU)
      6. 6.3.6 Floating-Point Unit (FPU)
    4. 6.4 On-Chip Memory
      1. 6.4.1 SRAM
      2. 6.4.2 Flash Memory
      3. 6.4.3 ROM
      4. 6.4.4 EEPROM
      5. 6.4.5 Memory Map
    5. 6.5 Peripherals
      1. 6.5.1  External Peripheral Interface (EPI)
      2. 6.5.2  Cyclical Redundancy Check (CRC)
      3. 6.5.3  Advanced Encryption Standard (AES) Accelerator
      4. 6.5.4  Data Encryption Standard (DES) Accelerator
      5. 6.5.5  Secure Hash Algorithm/Message Digest Algorithm (SHA/MD5) Accelerator
      6. 6.5.6  Serial Communications Peripherals
        1. 6.5.6.1 Ethernet MAC and PHY
        2. 6.5.6.2 Controller Area Network (CAN)
        3. 6.5.6.3 Universal Serial Bus (USB)
        4. 6.5.6.4 Universal Asynchronous Receiver/Transmitter (UART)
        5. 6.5.6.5 Inter-Integrated Circuit (I2C)
        6. 6.5.6.6 Quad Synchronous Serial Interface (QSSI)
      7. 6.5.7  System Integration
        1. 6.5.7.1 Direct Memory Access (DMA)
        2. 6.5.7.2 System Control and Clocks
        3. 6.5.7.3 Programmable Timers
        4. 6.5.7.4 Capture Compare PWM (CCP) Pins
        5. 6.5.7.5 Hibernation (HIB) Module
        6. 6.5.7.6 Watchdog Timers
        7. 6.5.7.7 Programmable GPIOs
      8. 6.5.8  Advanced Motion Control
        1. 6.5.8.1 Pulse Width Modulation (PWM)
        2. 6.5.8.2 Quadrature Encoder With Index (QEI) Module
      9. 6.5.9  Analog
        1. 6.5.9.1 ADC
        2. 6.5.9.2 Analog Comparators
      10. 6.5.10 JTAG and Arm Serial Wire Debug
      11. 6.5.11 Peripheral Memory Map
    6. 6.6 Identification
    7. 6.7 Boot Modes
  7. 7Applications, Implementation, and Layout
    1. 7.1 System Design Guidelines
  8. 8Device and Documentation Support
    1. 8.1 Getting Started and Next Steps
    2. 8.2 Device Nomenclature
    3. 8.3 Tools and Software
    4. 8.4 Documentation Support
    5. 8.5 Community Resources
    6. 8.6 Trademarks
    7. 8.7 Electrostatic Discharge Caution
    8. 8.8 Export Control Notice
    9. 8.9 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
VDD VDD supply voltage 0 4 V
VDDA VDDA supply voltage 0 4 V
VBAT VBAT battery supply voltage 0 4 V
VBATRMP VBAT battery supply voltage ramp time 0 0.7 V/µs
VIN_GPIO Input voltage (3) –0.3 4 V
IGPIOMAX Maximum current per output pin 64 mA
TS Unpowered storage temperature range –65 150 °C
TJMAX Maximum junction temperature 125 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Voltages are measured with respect to GND.
Applies to static and dynamic signals including overshoot.

ESD Ratings

over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS‑001 (1) (3) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22‑C101 (2) ±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance.
All pins are HBM compliant to ±2000 V for all combinations as per JESD22-A114F, except for the following stress combinations:
  • The Ethernet EN0RXIN, EN0TXON, EN0RXIP, and EN0TXOP pins to each other.
  • The GPIO pins PM4, PM5, PM6, and PM7 to other pins.
These exceptions are compliant to 500 V and do not require any special handling beyond typical ESD control procedures during assembly operations per JEDEC publication JEP155. These pins do meet the 500-V CDM specification.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
TA Ambient operating temperature range Extended temperature –40 105 °C
TJ Junction operating temperature range Extended temperature –40 125 °C

Recommended DC Operating Conditions

over operating free-air temperature (unless otherwise noted)
MIN NOM MAX UNIT
VDD VDD supply voltage 2.97 3.3 3.63 V
VDDA VDDA supply voltage (1) 2.97 3.3 3.63 V
VDDC VDDC supply voltage, run mode 1.14 1.2 1.32 V
VDDCDS VDDC supply voltage, deep-sleep mode 0.85 0.95 V
To ensure proper operation, power on VDDA before VDD if sourced from different supplies, or connect VDDA to the same supply as VDD. No restriction exists for powering off.

Recommended GPIO Operating Characteristics

The following sections describe the recommended GPIO operating characteristics for the device.

Two types of pads are provided on the device:

  • Fast GPIO pads: These pads provide variable, programmable drive strength and optimized voltage output levels.
  • Slow GPIO pads: These pads provide 2-mA drive strength and are designed to be sensitive to voltage inputs. The PJ1 GPIOs port pins are slow GPIO pads. All other GPIOs have a fast GPIO pad type.

NOTE

Port pins PL6 and PL7 operate as fast GPIO pads, but have 4-mA drive capability only. GPIO register controls for drive strength, slew rate and open drain have no effect on these pins. The registers which have no effect are as follows: GPIODR2R, GPIODR4R, GPIODR8R, GPIODR12R, GPIOSLR, and GPIOODR.

NOTE

Port pins PM[7:4] operate as fast GPIO pads but support only 2-, 4-, 6-, and 8-mA drive capability. 10- and 12-mA drive are not supported. All standard GPIO register controls, except for the GPIODR12R register, apply to these port pins.

Recommended Fast GPIO Pad Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIH Fast GPIO high-level input voltage 0.65 × VDD 4 V
IIH Fast GPIO high-level input current 300 nA
VIL Fast GPIO low-level input voltage 0 0.35 × VDD V
IIL Fast GPIO low-level input current (2) –200 nA
VHYS Fast GPIO input hysteresis 0.49 V
VOH Fast GPIO high-level output voltage 2.4 V
VOL Fast GPIO low-level output voltage 0.40 V
IOH Fast GPIO high-level source current, VOH = 2.4 V (1) 2-mA drive 2.0 mA
4-mA drive 4.0
8-mA drive 8.0
10-mA drive 10.0
12-mA drive 12.0
IOL Fast GPIO low-level sink current, VOL = 0.4 V (1) 2-mA drive 2.0 mA
4-mA drive 4.0
8-mA drive 8.0
10-mA drive 10.0
12-mA drive 12.0
12-mA drive overdriven to 18 mA 18.0
IO specifications reflect the maximum current where the corresponding output voltage meets the VOH or VOL thresholds. IO current can exceed these limits (subject to absolute maximum ratings).
Output, pullup, and pulldown are disabled; only input is enabled.

Recommended Slow GPIO Pad Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIH Slow GPIO high-level input voltage 0.65 × VDD 4 V
IIH Slow GPIO high-level input current 4.1 nA
VIL Slow GPIO low-level input voltage 0 0.35 × VDD V
IIL Slow GPIO low-level input current (2) –1 nA
VHYS Slow GPIO input hysteresis 0.49 V
VOH Slow GPIO high-level output voltage 2.4 V
VOL Slow GPIO low-level output voltage 0.4 V
IOH Slow GPIO high-level source current, VOH = 2.4 V, 2-mA drive 2.0 mA
IOL Slow GPIO low-level sink current, VOL = 0.4 V (1), 2-mA drive 2.0 mA
IO specifications reflect the maximum current where the corresponding output voltage meets the VOH or VOL thresholds. IO current can exceed these limits (subject to absolute maximum ratings).

GPIO Current Restrictions

over operating free-air temperature range (unless otherwise noted) (1)
MIN NOM MAX UNIT
IMAXL Cumulative maximum GPIO current per side, left 112 mA
IMAXB Cumulative maximum GPIO current per side, bottom (2) 97.6 mA
IMAXR Cumulative maximum GPIO current per side, right (2) 112 mA
IMAXT Cumulative maximum GPIO current per side, top (2) 80 mA
Based on design simulations, not tested in production.
Sum of sink and source current for GPIOs as listed in Table 5-1.

Table 5-1 Maximum GPIO Package Side Assignments

SIDE GPIOs
Left PC[4-7], PD[0-3], PQ[0-3], PE[0-3], PK[0-3], PN[4-5], PH[0-3]
Bottom PA[0-7], PF[0-4],PG[0-1], PK[4-7]
Right PM[0-7], PL[0-7], PB[0-3]
Top PC[0-3], PQ[4], PP[0-5], PN[0-5], PJ[0-1], PB[4-5], PE[4-5], PD[4-7]

I/O Reliability

For typical continuous drive applications, I/O pins configured in the range from 2 mA to 12 mA and operating at –40°C to 85°C meet the standard 10-year lifetime reliability. If a continuous current sink of 18 mA is required, then operation is limited to 0 to 75°C to meet the standard 10-year reliability.

At 105°C, I/O pins configured for continuous drive meet the standard 2.5-year lifetime reliability.

In typical switching applications (40% switch rate) operating at –40°C to 85°C, all I/O configurations except 2 mA meet the standard 10-year lifetime reliability with 50-pF loading. By limiting the capacitive loading to 20 pF for an I/O configured to 2 mA, the 10-year lifetime reliability can be met at –40°C to 85°C.

In typical switching applications (40% switch rate) operating at 105°C, all I/O configurations except 2 mA meet the standard 2.5-year lifetime reliability. By reducing the capacitive loading to 20 pF with a typical switching rate at 105°C, a 2-mA I/O configuration meets a 2.5-year lifetime reliability.

Current Consumption

over operating free-air temperature (unless otherwise noted) (1)
PARAMETER TEST CONDITIONS SYSTEM CLOCK TYP MAX UNIT
FREQ CLOCK SOURCE –40°C 25°C 85°C 105°C 85°C 105°C (2)
IDD_RUN Run mode (flash loop) VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC and PHY
120 MHz MOSC with PLL 96.4 105.3 107.2 108.7 129.9 140.0 mA
60 MHz MOSC with PLL 67.4 76.6 78.6 79.9 100.3 112.5
16 MHz PIOSC 11.9 24.4 25.5 26.7 45.0 56.4
1 MHz PIOSC 5.75 10.9 12.1 13.3 31.3 42.6
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC but not PHY
120 MHz MOSC with PLL 69.9 77.8 79.6 80.8 98.8 108.4
60 MHz MOSC with PLL 40.9 49.2 50.9 52.1 69.2 80.8
16 MHz PIOSC 11.3 23.6 25.0 26.2 43.1 54.3
1 MHz PIOSC 5.10 10.1 11.5 12.7 29.3 40.5
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on except MAC and PHY
120 MHz MOSC with PLL 68.1 76.0 77.6 78.6 96.6 106.0
60 MHz MOSC with PLL 40.0 48.2 49.8 50.8 67.9 79.2
16 MHz PIOSC 11.1 23.3 24.6 25.6 42.5 53.3
1 MHz PIOSC 5.07 10.1 11.3 12.3 29.0 39.8
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off
120 MHz MOSC with PLL 35.2 39.1 40.4 41.5 55.8 65.3
60 MHz MOSC with PLL 23.2 29.4 30.7 31.7 45.8 55.5
16 MHz PIOSC 7.38 17.9 19.0 20.0 34.5 44.1
1 MHz PIOSC 4.12 9.13 10.3 11.4 25.7 35.5
Run mode (SRAM loop) VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC and PHY
120 MHz MOSC with PLL 93.8 103.6 111.6 113.2 133.4 144.6
60 MHz MOSC with PLL 66.9 76.7 78.7 80.0 100.0 111.9
16 MHz PIOSC 12.6 19.0 20.1 21.3 39.1 50.3
1 MHz PIOSC 5.73 10.6 11.7 12.8 30.9 42.2
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC but not PHY
120 MHz MOSC with PLL 67.2 76.1 84.0 85.4 102.3 113.0
60 MHz MOSC with PLL 40.3 49.2 50.9 52.2 68.9 80.2
16 MHz PIOSC 11.9 18.2 19.6 20.8 37.2 48.2
1 MHz PIOSC 5.08 9.79 11.2 12.3 28.9 40.1
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals =All on except MAC and PHY
120 MHz MOSC with PLL 65.4 74.3 82.0 83.2 100.1 110.6
60 MHz MOSC with PLL 39.4 48.2 49.8 50.9 67.6 78.6
16 MHz PIOSC 11.7 17.9 19.2 20.2 36.6 47.2
1 MHz PIOSC 5.05 9.75 11.0 11.9 28.6 39.4
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off
120 MHz MOSC with PLL 35.4 43.3 44.7 45.8 59.8 69.0
60 MHz MOSC with PLL 23.4 29.4 30.7 31.7 45.5 54.9
16 MHz PIOSC 7.08 12.4 13.6 14.6 28.7 38.0
1 MHz PIOSC 4.60 8.78 10.0 11.0 25.3 34.9
IDD_SLEEP Sleep mode (FLASHPM = 0x0) VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC and PHY,
LDO = 1.2 V
120 MHz MOSC with PLL 82.8 94.8 96.8 98.1 117.9 129.1 mA
60 MHz MOSC with PLL 60.8 69.2 71.2 72.3 91.8 102.9
16 MHz PIOSC 11.2 16.8 18.1 19.1 35.4 45.9
1 MHz PIOSC (3) 5.10 10.3 11.5 12.6 28.9 39.6
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC but not PHY,
LDO = 1.2 V
120 MHz MOSC with PLL 56.2 67.4 69.1 70.3 87.1 97.8
60 MHz MOSC with PLL 34.4 41.9 43.4 44.5 60.7 71.6
16 MHz PIOSC (3) 10.6 16.2 17.5 18.5 34.5 45.1
1 MHz PIOSC (3) 4.47 9.60 10.9 12.0 28.0 38.7
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on except MAC and PHY,
LDO = 1.2 V
120 MHz MOSC with PLL 54.4 65.6 67.1 68.1 84.9 95.4
60 MHz MOSC with PLL 33.5 40.9 42.3 43.2 59.4 70.0
16 MHz PIOSC (3) 10.4 15.9 17.1 17.9 33.9 44.1
1 MHz PIOSC (3) 4.44 9.56 10.7 11.6 27.7 38.0
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off,
LDO = 1.2 V
120 MHz MOSC with PLL 22.0 28.6 29.8 30.7 44.1 53.1
60 MHz MOSC with PLL 16.3 22.0 23.2 24.1 37.5 46.6
16 MHz PIOSC (3) 5.37 10.4 11.5 12.4 26.1 35.1
1 MHz PIOSC (3) 4.37 8.60 9.71 10.6 24.6 33.9
Sleep mode (FLASHPM = 0x2) VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC and PHY,
LDO = 1.2 V
120 MHz MOSC with PLL 86.5 89.0 91.2 92.5 112.1 123.5
60 MHz MOSC with PLL 61.6 63.4 65.6 66.7 86.0 97.2
16 MHz PIOSC (3) 10.4 11.1 12.4 13.5 29.8 40.4
1 MHz PIOSC (3) 4.45 4.49 5.83 6.98 23.4 34.2
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on including MAC but not PHY,
LDO = 1.2 V
120 MHz MOSC with PLL 59.9 61.7 63.4 64.7 81.3 92.1
60 MHz MOSC with PLL 35.1 36.1 37.8 38.9 54.9 66.0
16 MHz PIOSC (3) 9.75 10.4 11.8 12.9 28.9 39.6
1 MHz PIOSC (3) 3.82 3.82 5.25 6.38 22.5 33.4
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on except MAC and PHY,
LDO = 1.2 V
120 MHz MOSC with PLL 58.1 59.9 61.4 62.5 79.1 89.7
60 MHz MOSC with PLL 34.2 35.1 36.7 37.6 53.6 64.4
16 MHz PIOSC (3) 9.50 10.1 11.4 12.3 28.3 38.6
1 MHz PIOSC (3) 3.79 3.78 5.06 5.96 22.2 32.7
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off,
LDO = 1.2 V
120 MHz MOSC with PLL 22.0 22.8 24.1 25.1 38.2 47.4
60 MHz MOSC with PLL 15.7 16.2 17.5 18.5 31.7 40.9
16 MHz PIOSC (3) 4.50 4.60 5.80 6.80 20.5 29.8
1 MHz PIOSC (3) 3.00 2.80 4.10 5.20 19.1 28.7
IDD_DEEPSLEEP Deep-sleep mode (FLASHPM = 0x2) VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on,
LDO = 1.2 V
16 MHz PIOSC 9.74 9.78 10.8 11.6 24.1 32.1 mA
30 kHz LFIOSC 2.60 2.83 3.83 4.60 17.1 25.3
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off,
LDO = 1.2 V
16 MHz PIOSC 4.53 4.05 4.88 5.53 15.9 22.7
30 kHz LFIOSC 0.614 0.762 1.69 2.46 13.3 20.7
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on,
LDO = 0.9 V
16 MHz PIOSC 5.21 7.33 7.97 8.48 15.3 20.1
30 kHz LFIOSC 2.02 2.16 2.79 3.29 10.0 14.9
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off,
LDO = 0.9 V (4)
16 MHz PIOSC 1.08 3.10 3.61 4.01 9.50 13.4
30 kHz LFIOSC 0.367 0.454 0.954 1.36 6.86 10.8
IDDA_RUN, IDDA_SLEEP All run modes VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on
120 MHz MOSC with PLL 2.61 2.66 2.68 2.66 3.03 3.35 mA
60 MHz MOSC with PLL 2.61 2.66 2.68 2.66 3.04 3.10
16 MHz PIOSC 2.45 2.49 2.50 2.48 2.85 2.95
1 MHz PIOSC 2.45 2.48 2.50 2.48 2.84 2.90
All sleep modes VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off
120 MHz MOSC with PLL 0.227 0.229 0.270 0.250 0.559 0.650
60 MHz MOSC with PLL 0.229 0.232 0.267 0.250 0.579 0.600
16 MHz PIOSC 0.228 0.229 0.265 0.251 0.545 0.575
1 MHz PIOSC 0.227 0.227 0.267 0.247 0.549 0.555
IDDA_DEEPSLEEP Deep-sleep mode (FLASHPM = 0x2) VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on,
LDO = 1.2 V
16 MHz PIOSC 2.45 2.48 2.50 2.48 2.84 2.90 mA
30 kHz LFIOSC 2.45 2.48 2.50 2.48 2.85 2.90
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off,
LDO = 1.2 V
16 MHz PIOSC 0.226 0.227 0.265 0.249 0.558 0.635
30 kHz LFIOSC 0.228 0.227 0.272 0.247 0.558 0.600
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All on,
LDO = 0.9 V (4)
16 MHz PIOSC 2.14 2.42 2.44 2.42 2.78 2.88
30 kHz LFIOSC 2.44 2.42 2.44 2.42 2.86 2.88
VDD = 3.3 V,
VDDA = 3.3 V,
Peripherals = All off,
LDO = 0.9 V (4)
16 MHz PIOSC 0.216 0.166 0.209 0.193 0.563 0.580
30 kHz LFIOSC 0.223 0.167 0.209 0.189 0.508 0.580
IHIB_NORTC Hibernate mode (external wake, RTC disabled) VBAT = 3.0 V VDD = 0 V,
VDDA = 0 V,
System clock = OFF,
Hibernate module = 32.768 kHz
1.04 1.20 1.44 1.69 1.62 2.14 µA
IHIB_RTC Hibernate mode (RTC enabled) VBAT = 3.0 V,
VDD = 0 V,
VDDA = 0 V,
System clock = OFF,
Hibernate module = 32.768 kHz
1.12 1.29 1.54 1.82 1.75 2.33 µA
IHIB_VDD3ON Hibernate mode (VDD3ON mode, tamper enabled) VBAT = 3.0 V,
VDD = 3.3 V,
VDDA = 3.3 V,
System clock = OFF,
Hibernate module = 32.768 kHz
6.78 7.99 17.0 22.1 31.0 46.2 µA
Hibernate mode (VDD3ON mode, tamper disabled) VBAT = 3.0 V,
VDD = 3.3 V,
VDDA = 3.3 V,
System clock = OFF,
Hibernate module = 32.768 kHz
5.42 6.39 15.4 17.8 28.9 32.0
Section 5.11 lists the current consumption that specific peripherals contribute to the run mode current consumption in Section 5.10. If these peripherals are not powered, then the peripheral current consumption can be subtracted from the run mode consumption in Section 5.10.
Applicable to extended temperature devices only.
If the MOSC is the source of the run-mode system clock and is powered down in sleep mode, wake time is increased by tMOSC_SETTLE.
See the System Control chapter of the MSP432E4 SimpleLink™ Microcontrollers Technical Reference Manual for information on lowering the LDO voltage to 0.9 V.

Peripheral Current Consumption

over operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS SYSTEM CLOCK TYP UNIT
IDDUSB USB (including USB PHY) run mode current VDD = 3.3 V,
VDDA = 3.3 V
120 MHz (MOSC with PLL) 4.0 mA
IDDEMAC Ethernet MAC run mode current VDD = 3.3 V,
VDDA = 3.3 V
120 MHz (MOSC with PLL) 1.9 mA
IDDEMACPHY Ethernet MAC and PHY run mode current VDD = 3.3 V,
VDDA = 3.3 V
120 MHz (MOSC with PLL) 30 mA

LDO Regulator Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
CLDO External filter capacitor size for internal power supply(1) 2.5 4.0 µF
ESR Filter capacitor equivalent series resistance 0 100
ESL Filter capacitor equivalent series inductance 0.5 nH
VLDO LDO output voltage, run mode 1.13 1.2 1.27 V
IINRUSH Inrush current 50 250 mA
Connect the capacitor as close as possible to pin 115.

Power Dissipation

over operating free-air temperature (unless otherwise noted) (1) (2)
PARAMETER TA TJ MIN MAX UNIT
PDE Extended temperature device power dissipation 105°C (extended temperature part) 125°C (extended temperature part) 452 mW
If the device exceeds the power dissipation value shown, then modifications such as heat sinks or fans must be used to conform to the limits shown.
A larger power dissipation allowance can be achieved by lowering TA as long as TJMAX shown in Section 5.1 is not exceeded.

Thermal Resistance Characteristics, 128-Pin PDT (TQFP) Package

over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC VALUE UNIT
θJA Thermal resistance (junction to ambient) (1) 44.2 °C/W
θJB Thermal resistance (junction to board) (1) 22.4 °C/W
θJC Thermal resistance (junction to case) (1) 6.8 °C/W
ΨJT Thermal metric (junction to top of package) 0.2 °C/W
ΨJB Thermal metric (junction to board) 22.1 °C/W
TJ Junction temperature formula TC + (P × ΨJT) (2)
TPCB + (P × ΨJB) (3)
TA + (P × θJA) (4)
TB + (P × θJB) (5) (6)
°C
Junction to ambient thermal resistance (θJA), junction to board thermal resistance (θJB), and junction to case thermal resistance (θJC) numbers are determined by a package simulator.
TC is the case temperature and P is the device power consumption.
TPCB is the temperature of the board acquired by following the steps listed in the EAI/JESD 51-8 standard summarized in Semiconductor and IC Package Thermal Metrics. P is the device power consumption.
Because θJA is highly variable and based on factors such as board design, chip size, pad size, altitude, and external ambient temperature, TI recommends using the equations that contain ΨJT and ΨJB for best results.
TB is temperature of the board.
θJB is not a pure reflection of the internal resistance of the package because it includes the resistance of the testing board and environment. TI recommends using equations that contain ΨJT and ΨJB for best results.

Timing and Switching Characteristics

Load Conditions

Table 5-2 shows the load conditions used for timing measurements, and Table 5-2 lists the load values for the specified signals.

MSP432E401Y EPI_load_fig.gif Figure 5-1 Load Conditions

Table 5-2 Load Conditions

SIGNALS LOAD VALUE (CL)
EPI0S[35:0] SDRAM interface 30 pF
EPI0S[35:0] general-purpose interface
EPI0S[35:0] host-bus interface
EPI0S[35:0] PSRAM interface 40 pF
All other digital I/O signals 50 pF

Power Supply Sequencing

To ensure proper operation, power on VDDA before VDD if sourced from different supplies, or connect VDDA to the same supply as VDD. No restriction exists for powering off.

Power and Brownout

Table 5-3 Power and Brownout Levels

over operating free-air temperature (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
P1 tVDDA_RISE Analog supply voltage (VDDA) rise time µs
P2 tVDD_RISE I/O supply voltage (VDD) rise time µs
P3 tVDDC_RISE Core supply voltage (VDDC) rise time 10 150 µs
P4 VPOR Power-on reset threshold (rising edge) 1.98 2.35 2.72 V
Power-on reset threshold (falling edge) 1.84 2.20 2.56
Power-on reset hysteresis 0.06 0.15 0.24
P5 VDDA_POK VDDA power-OK threshold (rising edge) 2.67 2.82 2.97 V
P6 VDDA_BOR0 VDDA brownout reset threshold 2.71 2.80 2.89 V
P7 VDD_POK VDD power-OK threshold (rising edge) 2.65 2.80 2.90 V
VDD power-OK threshold (falling edge) 2.67 2.76 2.85
P8 VDD_BOR0 VDD brownout reset threshold 2.77 2.86 2.95 V
P9 VDDC_POK VDDC power-OK threshold (rising edge) 0.85 0.95 1.10 V
VDDC power-OK threshold (falling edge) 0.71 0.80 0.85

VDDA Levels

The VDDA supply has three monitors:

  • Power-on reset (POR)
  • Power-OK (POK)
  • Brownout reset (BOR)

The POR monitor is used to keep the analog circuitry in reset until the VDDA supply reaches the correct range for the analog circuitry to begin operating. The POK monitor is used to keep the digital circuitry in reset until the VDDA power supply is at an acceptable operational level. The digital reset is only released when the Power-On Reset has deasserted and the Power-OK monitor for each supply indicates that power levels are in operational ranges. The BOR monitor is used to generate a reset to the device or assert an interrupt if the VDDA supply drops below its operational range.

NOTE

VDDA BOR and VDD BOR events are a combined BOR to the system logic, such that if either BOR event occurs, the following bits are affected:

  • The BORRIS bit in the Raw Interrupt Status (RIS) register, System Control offset 0x050
  • The BORMIS bit in the Masked Interrupt Status and Clear (MISC) register, System Control offset 0x058. This bit is set only if the BORIM bit in the Interrupt Mask Control (IMC) register has been set.
  • The BOR bit in the Reset Cause (RESC) register, System Control offset 0x05C. This bit is set only if either of the BOR events have been configured to initiate a reset.

In addition, the following bits control both BOR events:

  • The BORIM bit in the Interrupt Mask Control (IMC) register, System Control offset 0x054
  • The VDDA_UBOR0 and VDD_UBOR0 bits in the Power-Temperature Cause (PWRTC) register

See the System Control chapter of the MSP432E4 SimpleLink™ Microcontrollers Technical Reference Manual for more information on how to configure these registers.

Figure 5-2 shows the relationship between VDDA, POK, POR, and a BOR event.

MSP432E401Y Snowflake_A0_VDDA_POK.gif Figure 5-2 Power and Brownout Assertions vs VDDA Levels

VDD Levels

The VDD supply has two monitors:

  • Power-OK (POK)
  • Brownout reset (BOR)

The POK monitor is used to keep the digital circuitry in reset until the VDD power supply reaches an acceptable operational level. The digital reset is only released when the POR has deasserted and the POK monitor for each supply indicates that power levels are in operational ranges. The BOR monitor is used to generate a reset to the device or assert an interrupt if the VDD supply drops below its operational range.

NOTE

VDDA BOR and VDD BOR events are a combined BOR to the system logic, such that if either BOR event occurs, the following bits are affected:

  • The BORRIS bit in the Raw Interrupt Status (RIS) register, System Control offset 0x050
  • The BORMIS bit in the Masked Interrupt Status and Clear (MISC) register, System Control offset 0x058. This bit is set only if the BORIM bit in the Interrupt Mask Control (IMC) register has been set.
  • The BOR bit in the Reset Cause (RESC) register, System Control offset 0x05C. This bit is set only if either of the BOR events have been configured to initiate a reset.

In addition, the following bits control both BOR events:

  • The BORIM bit in the Interrupt Mask Control (IMC) register, System Control offset 0x054
  • The VDDA_UBOR0 and VDD_UBOR0 bits in the Power-Temperature Cause (PWRTC) register

See the System Control chapter of the MSP432E4 SimpleLink™ Microcontrollers Technical Reference Manual for more information on how to configure these registers.

Figure 5-3 shows the relationship between VDD, POK, POR, and a BOR event.

MSP432E401Y Flurry_A0_VDD_POK.gif Figure 5-3 Power and Brownout Assertions vs VDD Levels

VDDC Levels

The VDDC supply has one monitor, the Power-OK (POK). The POK monitor is used to keep the digital circuitry in reset until the VDDC power supply reaches an acceptable operational level. The digital reset is only released when the power-on reset has deasserted and the POK monitor for each supply indicates that power levels are in operational ranges. Figure 5-4 shows the relationship between POK and VDDC.

MSP432E401Y Flurry_A0_VDDC_POK.gif Figure 5-4 POK Assertion vs VDDC

VDD Glitch Response

Figure 5-5 shows the response of the BOR and the POR circuit to glitches on the VDD supply.

MSP432E401Y Snowflake_A0_Glitch_Response.png Figure 5-5 POR-BOR VDD Glitch Response

VDD Droop Response

Figure 5-6 shows the response of the BOR and the POR monitors to a drop on the VDD supply.

MSP432E401Y Snowflake_A0_Droop_Response.png Figure 5-6 POR-BOR VDD Droop Response

Reset Timing

Table 5-4 lists the reset characteristics.

Table 5-4 Reset Characteristics

over operating free-air temperature (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
R1 tDPORDLY Digital POR to internal reset assertion delay (see Figure 5-7) 0.44 126 µs
R2 tIRTOUT (1) (2) Standard internal reset time 14 16 ms
Internal reset time with recovery code repair (program or erase)(3) 24.4 6400(7)
R3 tBOR0DLY (1) BOR0 to internal reset assertion delay (6) (see Figure 5-8) 0.44 125 µs
R4 tRSTMIN Minimum RST pulse duration 0.25(4) or 100(5) µs
R5 tIRHWDLY RST to internal reset assertion delay (see Figure 5-9) 0.85 µs
R6 tIRSWR (1) Internal reset time-out after software-initiated system reset (see Figure 5-10) 2.44 µs
R7 tIRWDR (1) Internal reset time-out after watchdog reset (see Figure 5-11) 2.44 µs
R8 tIRMFR (1) Internal reset time-out after MOSC failure reset (see Figure 5-12) 2.44 µs
These values are based on simulation.
This is the delay from the time POR is released until the reset vector is fetched.
This parameter applies only in situations where a power-loss or brownout event occurs during an EEPROM program or erase operation, and EEPROM must be repaired (which is a rare case). For all other sequences, there is no change to normal POR timing. This delay is in addition to other POR delays.
Standard operation
Deep-sleep operation with PIOSC powered down
Timing values depend on the VDD power-down ramp rate.
This value represents the maximum internal reset time when the EEPROM reaches its endurance limit.
MSP432E401Y POR_Reset_Timing.gif Figure 5-7 Digital Power-On Reset Timing

The digital power-on reset is released only when the analog power-on reset has deasserted and the Power-OK monitor for each supply indicates that power levels are in operational ranges.

MSP432E401Y BOR_reset_timing.gif Figure 5-8 Brownout Reset Timing
MSP432E401Y RSTn_Reset_Timing.gif Figure 5-9 External Reset Timing (RST)
MSP432E401Y Software_Reset_Timing.gif Figure 5-10 Software Reset Timing
MSP432E401Y Watchdog_Reset_Timing.gif Figure 5-11 Watchdog Reset Timing
MSP432E401Y MOSC_Fail_Reset_Timing.gif Figure 5-12 MOSC Failure Reset Timing

Clock Specifications

The following sections provide specifications on the various clock sources and mode.

PLL Specifications

Table 5-5 lists the PLL characteristics.

NOTE

If the integrated Ethernet PHY is used, fREF_XTAL and fREF_EXT must be 25 MHz.

Table 5-5 Phase Locked Loop (PLL) Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN MAX UNIT
fREF_XTAL Crystal reference 5 25 MHz
fREF_EXT External clock reference 5 25 MHz
fPLLR PLL VCO frequency at 1.2 V(2) 100 480 MHz
fPLLS PLL VCO frequency at 0.9 V(1) 100 480 MHz
tREADY PLL lock time Enabling the PLL, when PLL is transitioning from power down to power up 512 × (reference clock period) µs
When the PLL VCO frequency is changed (PLL is already enabled) 128 × (reference clock period)
Changing the OSCSRC between MOSC and PIOSC 128 × (reference clock period)
If the LDO is dropped to 0.9 V, the system must be run 1/4 of the maximum frequency at most. The Q value in the PLLFREQ1 register must be set to 0x3 rather than using the PSYSDIV field in the RSCLKCFG register for the divisor.
PLL frequency is manually calculated using the values in the PLLFREQ0 and PLLFREQ1 registers.

PLL Configuration

The PLL is disabled by default during power-on reset and is enabled later by software if required. Software specifies the output divisor to set the system clock frequency and enables the PLL to drive the output. The PLL is controlled using the PLLFREQ0, PLLFREQ1, and PLLSTAT registers. Changes made to these registers do not become active until after the NEWFREQ bit in the RSCLKCFG register is enabled. The clock source for the main PLL is selected by configuring the PLLSRC field in the Run and Sleep Clock Configuration (RSCLKCFG) register. The PLL allows for the generation of system clock frequencies in excess of the reference clock provided. The reference clocks for the PLL are the PIOSC and the MOSC.

The PLL is controlled by two registers, PLLFREQ0 and PLLFREQ1. The PLL VCO frequency (fVCO) is determined through Equation 1.

Equation 1. fVCO = fIN × MDIV

where

  • fIN = fXTAL / (Q+1)(N+1) or fPIOSC / (Q+1)(N+1)
  • MDIV = MINT + (MFRAC / 1024)

The Q and N values are programmed in the PLLFREQ1 register. To reduce jitter, program MFRAC to 0x0.

When the PLL is active, the system clock frequency (SysClk) is calculated using Equation 2.

Equation 2. SysClk = fVCO / (1 + 1)

The PLL system divisor factor (PSYSDIV) must be set as 1. Table 5-6 lists examples of the system clock frequency.

Table 5-6 Examples of System Clock Frequencies

fVCO (MHz) Q PSYSDIV + 1 System Clock (SYSCLK) Frequency (MHz)
480 2 2 120
480 3 2 80
480 4 2 60
480 5 2 48
320 2 2 80
320 3 2 53
320 4 2 40

If the main oscillator provides the clock reference to the PLL, the translation provided by hardware and used to program the PLL is available for software in the PLL Frequency n (PLLFREQn) registers. The internal translation provides a translation within ±1% of the targeted PLL VCO frequency. Table 5-7 shows the actual PLL frequency and error for a given crystal choice.

Table 5-7 provides examples of the programming expected for the PLLFREQ0 and PLLFREQ1 registers. The CRYSTAL FREQUENCY column specifies the input crystal frequency and the PLL FREQUENCY column displays the PLL frequency given the values of MINT and N, when Q = 0.

Table 5-7 Actual PLL Frequency(1)

CRYSTAL FREQUENCY (MHz) MINT N REFERENCE FREQUENCY (MHz)(2) PLL FREQUENCY (MHz)
DECIMAL VALUE HEXADECIMAL VALUE
5 64 0x40 0x0 5 320
6 160 0x35 0x2 2 320
8 40 0x28 0x0 8 320
10 32 0x20 0x0 10 320
12 80 0x50 0x2 4 320
16 20 0x14 0x0 16 320
18 160 0xA0 0x8 2 320
20 16 0x10 0x0 20 320
24 40 0x28 0x2 8 320
25 64 0x40 0x4 5 320
5 96 0x60 0x0 5 480
6 80 0x50 0x0 6 480
8 60 0x3C 0x0 8 480
10 48 0x30 0x0 10 480
12 40 0x28 0x0 12 480
16 30 0x1E 0x0 16 480
18 80 0x50 0x2 6 480
20 24 0x18 0x0 20 480
24 20 0x14 0x0 24 480
25 96 0x60 0x4 5 480
For all examples listed, Q = 0.
For a given crystal frequency, N should be chosen such that the reference frequency is 4 to 30 MHz.

PIOSC Specifications

Table 5-8 lists the PIOSC characteristics.

Table 5-8 PIOSC Clock Characteristics

PARAMETER MIN NOM MAX UNIT
fPIOSC Factory calibration, 0°C to 105°C:
Internal 16-MHz precision oscillator frequency variance across voltage and temperature range when factory calibration is used
±6%
Factory calibration, –40°C to <0°C ±10%
Recalibration:
Internal 16-MHz precision oscillator frequency variance when recalibration is used at a specific temperature
±1%
tSTART PIOSC start-up time(1) 1 µs
PIOSC start-up time is part of reset and is included in the internal reset time-out value (TIRTOUT) in Table 5-4. The TSTART value is based on simulation.

Low-Frequency Oscillator Specifications

Table 5-9 lists the characteristics of the low-frequency oscillator.

Table 5-9 Low-Frequency Oscillator Characteristics

PARAMETER MIN NOM MAX UNIT
fLFIOSC Internal low-frequency oscillator frequency 10 33 75 kHz

Hibernation Low-Frequency Oscillator Specifications

Table 5-10 Hibernation External Oscillator (XOSC) Input Characteristics

PARAMETER MIN NOM MAX UNIT
fHIBXOSC (1) Parallel resonance frequency 32.768 kHz
C1, C2 External load capacitance on XOSC0, XOSC1 pins (2) 12 24 pF
CPKG Device package stray shunt capacitance (2) 0.5 pF
CPCB PCB stray shunt capacitance (2) 0.5 pF
CSHUNT Total shunt capacitance (2) 4 pF
ESR Crystal effective series resistance, OSCDRV = 0 (3) 50
Crystal effective series resistance, OSCDRV = 1 (3) 75
DL Oscillator output drive level 0.25 µW
tSTART Oscillator start-up time, when using a crystal (5) 600 1500 (4) ms
VIH CMOS input high level, when using an external oscillator with VSupply > 3.3 V 2.64 V
CMOS input high level, when using an external oscillator with 1.8 V ≤ VSupply ≤ 3.3 V 0.8 × VSupply
VIL (6) CMOS input low level, when using an external oscillator with 1.8 V ≤ VSupply ≤ 3.63 V 0.2 × VSupply V
VHYS (6) CMOS input buffer hysteresis, when using an external oscillator with 1.8 V ≤ VSupply ≤ 3.63 V 360 960 1390 mV
DCHIBOSC_EXT External single-ended (bypass) reference duty cycle 30% 70%
The Hibernation XOSC pins are not fail-safe and must follow the limits in Section 5.15.9.1.2.
See the additional information about the load capacitors following this table.
Crystal ESR specified by crystal manufacturer.
Only valid for recommended supply conditions. Measured with OSCDRV bit set (high drive strength enabled, 24 pF).
Oscillator start-up time is specified from the time the oscillator is enabled to when it reaches a stable point of oscillation such that the internal clock is valid.
Specification is relative to the larger of VDD or VBAT.

Choose the load capacitors added on the board, C1 and C2, such that Equation 3 is satisfied (see Table 5-10 for typical values).

Equation 3. CL = (C1 × C2) / (C1 + C2) + CSHUNT

where

  • CL = load capacitance specified by crystal manufacturer
  • CSHUNT = CPKG + CPCB + C0 (total shunt capacitance seen across XOSC0 and XOSC1)
  • CPKG, CPCB as measured across the XOSC0 and XOSC1 pins excluding the crystal
  • Clear the OSCDRV bit in the Hibernation Control (HIBCTL) register for C1,2 ≤ 18 pF
  • Set the OSCDRV bit for C1,2 > 18 pF
  • C0 = Shunt capacitance of crystal specified by the crystal manufacturer

Table 5-11 lists the characteristics of the Hibernation module low-frequency oscillator.

Table 5-11 Hibernation Internal Low-Frequency Oscillator Clock Characteristics

PARAMETER MIN NOM MAX UNIT
fHIBLFIOSC Internal low-frequency hibernation oscillator frequency 10 33 90 kHz

Main Oscillator Specifications

Table 5-12 lists the required characteristics of the main oscillator input.

Table 5-12 Main Oscillator Input Characteristics

over operating free-air temperature (unless otherwise noted)(2)
PARAMETER MIN NOM MAX UNIT
fMOSC Parallel resonance frequency 4 (1) 25 MHz
fREF_XTAL_BYPASS External clock reference (PLL in BYPASS mode) 0 120 MHz
C1, C2 External load capacitance on OSC0, OSC1 pins (3) 12 24 pF
CPKG Device package stray shunt capacitance (3) 0.5 pF
CPCB PCB stray shunt capacitance (3) 0.5 pF
CSHUNT Total shunt capacitance (3) 4 pF
ESR Crystal effective series resistance 4 MHz (4) (5) 300 Ω
6 MHz (4) (5) 200
8 MHz (4) (5) 130
12 MHz (4) (5) 120
16 MHz (4) (5) 100
25 MHz (4) (5) 50
DL Oscillator output drive level(7) OSCPWR mW
TSTART Oscillator start-up time, when using a crystal (6) 18 ms
VIH CMOS input high level, when using an external oscillator 0.65 × VDD VDD V
VIL CMOS input low level, when using an external oscillator GND 0.35 × VDD V
VHYS CMOS input buffer hysteresis, when using an external oscillator 150 mV
DCOSC_EXT External clock reference duty cycle 45% 55%
5 MHz is the minimum when using the PLL.
See Table 5-39 and Table 5-40 for additional Ethernet crystal requirements.
See the additional information about the load capacitors following this table.
Crystal ESR specified by crystal manufacturer.
Crystal vendors can be contacted to confirm these specifications are met for a specific crystal part number if the vendors generic crystal datasheet show limits outside of these specifications.
Oscillator start-up time is specified from the time the oscillator is enabled to when it reaches a stable point of oscillation such that the internal clock is valid.
OSCPWR = (2 × π × FP × CL × 2.5)2 × ESR / 2. An estimation of the typical power delivered to the crystal is based on the CL, FP and ESR parameters of the crystal in the circuit as calculated by the OSCPWR equation. Ensure that the value calculated for OSCPWR does not exceed the crystal's drive-level maximum.

The load capacitors added on the board, C1 and C2, should be chosen such that Equation 4 is satisfied (see Table 5-12 for typical values and Table 5-13 for detailed crystal parameter information).

Equation 4. CL = (C1 × C2) / (C1 + C2) + CSHUNT

where

  • CL = load capacitance specified by crystal manufacturer
  • CSHUNT = C0 + CPKG + CPCB (total shunt capacitance seen across OSC0 and OSC1 crystal inputs)
  • CPKG, CPCB = Mutual capacitance as measured across the OSC0 and OSC1 pins excluding the crystal
  • C0 = Shunt capacitance of crystal specified by the crystal manufacturer

Table 5-13 lists part numbers of crystals that have been simulated and confirmed to operate within the specifications in Table 5-12. Other crystals that have nearly identical crystal parameters can be expected to work as well.

In Table 5-13, the crystal parameters labeled C0, C1, and L1 are values that are obtained from the crystal manufacturer. These numbers are usually a result of testing a relevant batch of crystals on a network analyzer. The parameters labeled ESR, DL, and CL are maximum numbers usually available in the data sheet for a crystal.

Table 5-13 also includes three columns of Recommended Component Values. These values apply to system board components. C1 and C2 are the values in picofarads of the load capacitors that should be put on each leg of the crystal pins to ensure oscillation at the correct frequency. Rs is the value in kΩ of a resistor that is placed in series with the crystal between the OSC1 pin and the crystal pin. Rs dissipates some of the power so the Max Dl crystal parameter is not exceeded. Only use the recommended C1, C2, and Rs values with the associated crystal part. The values in the table were used in the simulation to ensure crystal start-up and to determine the worst-case drive level (WC DL). The value in the WC DL column should not be greater than the Max DL crystal parameter. The WC DL value can be used to determine if a crystal with similar parameter values but a lower Max DL value is acceptable.

Table 5-13 Crystal Parameters

Manufacturer Manufacturer Part Number Holder Package Size (mm × mm) Frequency (MHz) Crystal Specification (Tolerance / Stability) Crystal Parameters Recommended Component Values WC DL (µW)
Typical Values Max Values
C0 (pF) C1 (fF) L1 (mH) ESR (Ω) Max DL (µW) CL (pf) C1 (pF) C2 (pF) Rs (kΩ)
NDK NX8045GB-4.000M-STD-CJL-5 NX8045GB 8 × 4.5 4 30 / 50 ppm 1.00 2.70 598.10 300 500 8 12 12 0 132
FOX FQ1045A-4 2-SMD 10 × 4.5 4 30 / 30 ppm 1.18 4.05 396.00 150 500 10 14 14 0 103
NDK NX8045GB-5.000M-STD-CSF-4 NX8045GB 8 × 4.5 5 30 / 50 ppm 1.00 2.80 356.50 250 500 8 12 12 0 164
NDK NX8045GB-6.000M-STD-CSF-4 NX8045GB 8 × 4.5 6 30 / 50 ppm 1.30 4.10 173.20 250 500 8 12 12 0 214
FOX FQ1045A-6 2-SMD 10 × 4.5 6 30 / 30 ppm 1.37 6.26 112.30 150 500 10 14 14 0 209
NDK NX8045GB-8.000M-STD-CSF-6 NX8045GB 8 × 4.5 8 30 / 50 ppm 1.00 2.80 139.30 200 500 8 12 12 0 277
FOX FQ7050B-8 4-SMD 7 × 5 8 30 / 30 ppm 1.95 6.69 59.10 80 500 10 14 14 0 217
ECS ECS-80-16-28A-TR HC49/US 12.5 × 4.85 8 50 / 30 ppm 1.82 4.90 85.70 80 500 16 24 24 0 298
Abracon AABMM-12.0000MHz-10-D-1-X-T ABMM 7.2 × 5.2 12 10 / 20 ppm 2.37 8.85 20.5 50 500 10 12 12 2.0 (1) 124
NDK NX3225GA-12.000MHZ-STD-CRG-2 NX3225GA 3.2 × 2.5 12 20 / 30 ppm 0.70 2.20 81.00 100 200 8 12 12 2.5 147
NDK NX5032GA-12.000MHZ-LN-CD-1 NX5032GA 5 × 3.2 12 30 / 50 ppm 0.93 3.12 56.40 120 500 8 12 12 0 362
FOX FQ5032B-12 4-SMD 5 × 3.2 12 30 / 30 ppm 1.16 4.16 42.30 80 500 10 14 14 0 370
Abracon AABMM-16.0000MHz-10-D-1-X-T ABMM 7.2 × 5.2 16 10 / 20 ppm 3.00 11.00 9.30 50 500 10 12 12 2.0 (1) 143
Ecliptek ECX-6595-16.000M HC-49/UP 13.3 × 4.85 16 15 / 30 ppm 3.00 12.7 8.1 50 1000 10 12 12 2.0 (1) 139
NDK NX3225GA-16.000MHZ-STD-CRG-2 NX3225GA 3.2 × 2.5 16 20 / 30 ppm 1.00 2.90 33.90 80 200 8 12 12 2 188
NDK NX5032GA-16.000MHZ-LN-CD-1 NX5032GA 5 × 3.2 16 30 / 50 ppm 1.02 3.82 25.90 120 (2) 500 8 10 10 0 437
ECS ECS-160-9-42-CKM-TR ECX-42 4 × 2.5 16 10 / 10 ppm 1.47 3.90 25.84 60 300 9 12 12 0.5 289
Abracon AABMM-25.0000MHz-10-D-1-X-T ABMM 7.2 × 5.2 25 10 / 20 ppm 3.00 11.00 3.70 50 500 10 12 12 2.0 (1) 158
Ecliptek ECX-6593-25.000M HC-49/UP 13.3 × 4.85 25 15 / 30 ppm 3.00 12.8 3.2 40 1000 10 12 12 1.5 (1) 159
NDK NX3225GA-25.000MHZ-STD-CRG-2 NX3225GA 3.2 × 2.5 25 20 / 30 ppm 1.10 4.70 8.70 50 200 8 12 12 2 181
NDK NX5032GA-25.000MHZ-LD-CD-1 NX5032GA 5 × 3.2 25 30 / 50 ppm 1.3 5.1 7.1 70 500 8 10 10 1.0 (1) 216
12 12 0.75 (3) 269
AURIS Q-25.000M-HC3225/4-F-30-30-E-12-TR HC3225/4 3.2 × 2.5 25 30 / 30 ppm 1.58 5.01 8.34 50 500 12 16 16 1 331
FOX FQ5032B-25 4-SMD 5 × 3.2 25 30 / 30 ppm 1.69 7.92 5.13 50 500 10 14 14 0.5 433
TXC 7A2570018 NX5032GA 5 × 3.2 25 20 / 25 ppm 2.0 6.7 6.1 30 350 10 12 12 2.0 (3) 124
RS values as low as 0 Ω can be used. Using a lower RS value causes the WC DL to increase toward the maximum DL of the crystal.
Although this ESR value is outside of the recommended crystal ESR maximum for this frequency, this crystal has been simulated to confirm proper operation and is valid for use with this device.
RS values as low as 500 Ω can be used. Using a lower RS value causes the WC DL to increase toward the maximum DL of the crystal.

Main Oscillator Specification WIth ADC

Table 5-14 lists the system clock characteristics with ADC operation.

Table 5-14 System Clock Characteristics With ADC Operation

PARAMETER MIN NOM MAX UNIT
fsysadc System clock frequency when the ADC module is operating (when PLL is bypassed) 16 MHz

System Clock Characteristics With USB Operation

Table 5-15 lists the system clock characteristics with USB operation.

Table 5-15 System Clock Characteristics With USB Operation

PARAMETER MIN NOM MAX UNIT
fsysusb System clock frequency when the USB module is operating (MOSC must be the clock source, either with or without using the PLL) 30 MHz

Sleep Modes

The following tables can be used to calculate the maximum wake time from sleep or deep sleep mode, depending on the specific application. Depending on the application configuration, each parameter, except for tFLASH, adds sequential latency to the wake time. Flash restoration happens in parallel to the other wake processes, and its wake time is normally absorbed by the other latencies. As an example, the wake time for a device in deep sleep mode with the PIOSC and PLL turned off and the flash and SRAM in low-power mode is calculated by Equation 5.

Equation 5. Wake Time = tPIOSCDS + tPLLDS + tSRAMLPDS

tFLASH does not contribute to this equation because the values of the other parameters are greater.

In sleep mode, the wake time due to a clock source is zero because the device uses the same clock configuration in run mode; thus, there is no latency involved with respect to the clocks.

Table 5-16 lists the wake-up times from sleep mode.

Table 5-16 Wake From Sleep Characteristics

over operating free-air temperature (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
D1 tPIOSC Time to restore PIOSC as system clock in sleep mode N/A µs
D2 tMOSC Time to restore MOSC as system clock in sleep mode N/A µs
D3 tPLL Time to restore PLL as system clock in sleep mode N/A µs
D4 tLDO Time to restore LDO to 1.2 V in sleep mode 39 µs
D5 tFLASH Time to restore flash to active state from low-power state in sleep mode 96 µs
D6 tSRAMLP Time to restore SRAM to active state from low-power state in sleep mode 15 µs
D7 tSRAMSTBY Time to restore SRAM to active state from standby state in sleep mode 15 µs

Table 5-16 lists the wake-up times from deep sleep mode.

Table 5-17 Wake From Deep Sleep Characteristics

over operating free-air temperature (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
D8 tPIOSCDS Time to restore PIOSC as system clock in deep sleep mode 14 deep-sleep clock cycles
D9 tMOSCDS Time to restore MOSC as system clock in deep sleep mode 18 ms
D10 tPLLDS Time to restore PLL as system clock in deep sleep mode 1 cycle of deep sleep clock + 512 cycles of PLL reference clock (1) clock cycles
D11 tLDODS Time to restore LDO to 1.2 V in deep sleep mode 39 µs
D12 tFLASHLPDS Time to restore flash to active state from low-power state 96 µs
D13 tSRAMLPDS Time to restore SRAM to active state from low-power state 15 µs
D14 tSRAMSTBYDS Time to restore SRAM to active state from standby state 15 µs
Deep sleep clock can vary. See the System Control chapter of the MSP432E4 SimpleLink™ Microcontrollers Technical Reference Manual for the deep sleep clock options.

Hibernation Module

The Hibernation module requires special system implementation considerations because it is intended to power down all other sections of its host device. See the Hibernation Module chapter of the MSP432E4 SimpleLink™ Microcontrollers Technical Reference Manual.

Table 5-18 lists the required characteristics of the Hibernation module battery.

Table 5-18 Hibernation Module Battery Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN NOM MAX UNIT
VBAT Battery supply voltage 1.8 3.0 3.6 V
VBATRMP VBAT battery supply voltage ramp time 0 0.7 V/µs
VLOWBAT Low-battery detect voltage VBATSEL = 0x0 1.8 1.9 2.0 V
VBATSEL = 0x1 2.0 2.1 2.2
VBATSEL = 0x2 2.2 2.3 2.4
VBATSEL = 0x3 2.4 2.5 2.6

Table 5-19 lists the timing characteristics of the HIB module.

Table 5-19 Hibernation Module Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-13)
NO. PARAMETER MIN TYP MAX UNIT
H1 tWAKE WAKE assertion time 100 ns
H2 tWAKE_TO_HIB WAKE assert to HIB desassert (wake-up time) 1 HIB module clock period
H3 tVDD_RAMP VDD ramp to 3.0 V See (1) µs
H4 tVDD_CODE VDD at 3 V to internal POR deassert; first instruction executes 500 µs
H5 DCRTCCLK Duty cycle for RTCCLK output signal, when using a 32.768‑kHz crystal 40% 60%
Duty cycle for RTCCLK output signal, when using a 32.768‑kHz external single-ended (bypass) clock source 30% 70%
Depends on characteristics of power supply.
MSP432E401Y HIB_Timing_blizzard.gif Figure 5-13 Hibernation Module Timing

Table 5-20 lists the characteristics of the HIB module tamper detection.

Table 5-20 Hibernation Module Tamper I/O Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
RTPU TMPRn pullup resistor 3.5 4.4 5.2
tSP TMPRn pulse duration with short glitch filter 62 µs
tLP TMPRn pulse duration with long glitch filter 94 ms
tNMIS TMPRn assertion to NMI (short glitch filter) 95 µs
tNMIL TMPRn assertion to NMI (long glitch filter) 94 ms
VIH TMPRn high-level input voltage when operating from VBAT VBAT × 0.8 V

Flash Memory

Table 5-21 lists the characteristics of the flash memory.

Table 5-21 Flash Memory Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
PECYC Number of program and erase cycles 100000 cycles
tRET Data retention with 100% power-on hours at TJ = 85°C 20 years
tRET_EXTEMP Data retention with 10% power-on hours at TJ = 125°C and 90% power-on hours at TJ = 100°C 11 years
tPROG64 Program time for double-word-aligned (64 bits) data 30 100 300 µs
tERASE Page erase time <1k cycles 8 15 ms
10k cycles 15 40
100k cycles 75 500
tME Mass erase time <1k cycles 10 25 ms
10k cycles 20 70
100k cycles 300 2500

EEPROM

Table 5-22 lists the characteristics of the EEPROM.

Table 5-22 EEPROM Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
EPECYC Number of mass program and erase cycles of a single word 500000 cycles
ETRET Data retention with 100% power-on hours at TJ = 85°C 20 years
ETRET_EXTEMP Data retention with 10% power-on hours at TJ = 125°C and 90% power-on hours at TJ = 100°C 11 years
ETPROG Program time for 32 bits of data with memory space available 110 600 µs
Program time for 32 bits of data in which a copy to the copy buffer is required, the copy buffer has space, and less than 10% of EEPROM endurance used 30 ms
Program time for 32 bits of data in which a copy to the copy buffer is required, the copy buffer has space, and more than 90% of EEPROM endurance used 900
Program time for 32 bits of data in which a copy of the copy buffer is required, the copy buffer requires an erase, and less than 10% of EEPROM endurance used 60
Program time for 32 bits of data a copy to the copy buffer is required, the copy buffer requires an erase, and more than 90% of EEPROM endurance used 1800
ETREAD Read access time 7 + 2EWS 9 + 4EWS system clock cycles
ETME Mass erase time <1k cycles 8 15 ms
10k cycles 15 40
100k cycles 75 500

Input/Output Pin Characteristics

NOTE

All GPIO signals are 3.3-V tolerant, except for PB1 (USB0VBUS) which is 5-V tolerant. See the General-Purpose Input/Outputs (GPIOs) chapter of the MSP432E4 SimpleLink™ Microcontrollers Technical Reference Manual for more information on GPIO configuration.

Two types of pads are provided on the device:

  • Fast GPIO pads: These pads provide variable, programmable drive strength and optimized voltage output levels.
  • Slow GPIO pads: These pads provide 2-mA drive strength and are designed to be sensitive to voltage inputs. The following GPIOs port pins are designed with slow GPIO pads:
    • PJ1

NOTE

Port pins PL6 and PL7 operate as fast GPIO pads, but have 4-mA drive capability only. GPIO register controls for drive strength, slew rate, and open drain have no effect on these pins. The following registers have no effect: GPIODR2R, GPIODR4R, GPIODR8R, GPIODR12R, GPIOSLR, and GPIOODR.

NOTE

Port pins PM[7:4] operate as fast GPIO pads but support only 2-, 4-, 6-, and 8-mA drive capability. All standard GPIO register controls, except for the GPIODR12R register, apply to these port pins.

Table 5-23 lists the characteristics of the fast GPIOs.

Table 5-23 Fast GPIO Module Characteristics

over operating free-air temperature (unless otherwise noted) (1) (2) (3) (4)
PARAMETER MIN TYP MAX UNIT
CLGPIO Capacitive loading for measurements given in this table (5) 50 pF
RGPIOPU Fast GPIO internal pullup resistor (6) 12.1 16.0 20.2
RGPIOPU4MA Fast GPIO PL6 and PL7 (4 mA only) pullup resistor 25 40
RGPIOPD Fast GPIO internal pulldown resistor (6) 13.0 20.5 35.5
RGPIOPD4MA Fast GPIO PL6 and PL7 (4 mA only) pulldown resistor 10 14.3 17
ILKG+ Fast GPIO input leakage current, 0 V ≤ VIN ≤ VDD GPIO pins(7) 400 nA
Fast GPIO input leakage current, 0 V < VIN ≤ VDD, fast GPIO pins configured as ADC or analog comparator inputs 400
IINJ- DC injection current, VIN ≤ 0 V 60 µA
IMAXINJ- Maximum negative injection if not voltage protected (4) –0.5 mA
tGPIOR Fast GPIO rise time(8) 2-mA drive 7.85 11.73 ns
4-mA drive 4.15 6.35
8-mA drive 2.33 3.73
8-mA drive with slew rate control 3.77 5.76
10-mA drive 1.98 3.22
12-mA drive 1.75 2.9
tGPIOF Fast GPIO fall time (9) 2-mA drive 10.3 16.5 ns
4-mA drive 5.15 8.29
8-mA drive 2.58 4.16
8-mA drive with slew rate control 3.54 5.55
10-mA drive 2.07 3.34
12-mA drive 1.73 2.78
VDD must be within the range specified in Section 5.4.
Leakage and Injection current characteristics specified in this table also apply to XOSC0 and XOSC1 inputs.
For the external reference inputs of the ADC, avoid a current-limiting resistor (see the IVREF specification in Table 5-33).
I/O pads should be protected if the I/O voltage may go outside the limits shown in the table. If the part is unpowered, the I/O pad voltage or current must be limited (as shown in this table) to avoid powering the part through the I/O pad, which can potentially cause irreversible damage.
See the individual peripheral sections for specific loading information.
This value includes all GPIO except for port pins PL6 and PL7.
The leakage current is measured with VIN applied to the corresponding pins. The leakage of digital port pins is measured individually. The port pin is configured as an input and the pullup/pulldown resistor is disabled.
Time measured from 20% to 80% of VDD.
Time measured from 80% to 20% of VDD.

Table 5-24 lists the characteristics of the slow GPIOs.

Table 5-24 Slow GPIO Module Characteristics

over operating free-air temperature (unless otherwise noted)(1)(2)(3)
PARAMETER MIN TYP MAX UNIT
CLGPIO Capacitive loading for measurements given in this table(4) 50 pF
RGPIOPU Slow GPIO internal pullup resistor 13.8 20.0 31.4
RGPIOPD Slow GPIO internal pulldown resistor 13.0 20.5 35.5
ILKG+ Slow GPIO input leakage current, 0 V ≤ VIN ≤ VDD, GPIO pins(5) 3.25 nA
Slow GPIO input leakage current, 0 V < VIN ≤ VDD, GPIO pins configured as ADC or analog comparator inputs 3.25
IINJ- DC injection current, VIN ≤ 0 V 3.42 µA
tGPIOR Slow GPIO rise time, 2-mA drive(6) 19.3 29.8 ns
tGPIOF Slow GPIO fall time, 2-mA drive(7) 12.8 21.1 ns
VDD must be within the range specified in Section 5.4.
VIN must be within the range specified in Section 5.1. Leakage current outside of this maximum voltage is not ensured and can result in permanent damage of the device.
To avoid potential damage to the part, externally limit either the voltage or current on the I/Os other than power and WAKE as listed in this table.
See the individual peripheral sections for specific loading information.
The leakage current is measured with VIN applied to the corresponding pins. The leakage of digital port pins is measured individually. The port pin is configured as an input and the pullup/pulldown resistor is disabled.
Time measured from 20% to 80% of VDD.
Time measured from 80% to 20% of VDD.

Types of I/O Pins and ESD Protection

CAUTION

All device I/Os pins, except for PB1, are NOT 5-V tolerant; voltages in excess of the limits in Section 5.4 can permanently damage the device. PB1 is used for the USB0VBUS signal, which requires a 5-V input.

Hibernate WAKE pin

The Hibernate WAKE pin uses ESD protection, similar to the one shown in Figure 5-14. This ESD protection prevents a direct path between this pad and any power supply rails in the device. The WAKE pad input voltage should be kept inside the maximum ratings specified in Section 5.1 to ensure current leakage and current injections are within acceptable range. Table 5-25 lists current leakages and current injection for these pins.

MSP432E401Y snowflake_failsafe.gif Figure 5-14 ESD Protection

Table 5-25 Pad Voltage and Current Characteristics for Hibernate WAKE Pin

over operating free-air temperature (unless otherwise noted)(1)(2)
PARAMETER MIN TYP MAX UNIT
ILKG+ Positive I/O leakage for VDD ≤ VIN ≤ VBAT + 0.3 V 300 nA
ILKG- Negative I/O leakage for –0.3 V ≤ VIN ≤ 0 V(3) 43.3 µA
IINJ+ Maximum positive injection if not voltage protected 2 mA
IINJ- Maximum negative injection if not voltage protected (4) –0.5 mA
VIN must be within the range specified in Section 5.1. Leakage current outside of this maximum voltage is not ensured and can result in permanent damage of the device.
VDD must be within the range specified in Section 5.4.
Leakage outside the minimum range (–0.3 V) is unbounded and must be limited to IINJ- using an external resistor.
If the I/O pad is not voltage limited, it should be current limited (to IINJ + and IINJ-) if there is any possibility of the pad voltage exceeding the VIO limits (including transient behavior during supply ramp up, or at any time when the part is unpowered).

Nonpower I/O Pins

Most nonpower I/Os (with the exception of the I/O pad for Hibernate WAKE input) have ESD protection as shown in Figure 5-15.

These I/Os have an ESD clamp to ground and a diode connection to the corresponding power supply rail. To prevent potential damage to the device, follow the specifications in Table 5-26 for the voltage and current of these I/Os. In addition, comply with that the ADC external reference specifications in Table 5-33 to prevent gain error.

MSP432E401Y snowflake_nonfailsafe.gif Figure 5-15 ESD Protection for Nonpower Pins (Except WAKE Signal)

Table 5-26 Nonpower I/O Pad Voltage and Current Characteristics

over operating free-air temperature (unless otherwise noted) (1) (2) (3)
PARAMETER MIN TYP MAX UNIT
VIO I/O pad voltage limits if voltage protected –0.3 VDD VDD + 0.3 V
ILKG+ Positive I/O leakage for VDD ≤ VIN ≤VIO (4) 400 nA
ILKG- Negative I/O leakage for VIO MIN ≤ VIN ≤ 0V (4) 60 µA
IINJ+ Maximum positive injection if not voltage protected(5) 2 mA
IINJ- Maximum negative injection if not voltage protected(5) –0.5 mA
To avoid potential damage to the part, externally limit either the voltage or current on I/Os other than power and WAKE as listed in this table.
For the external reference inputs of the ADC, avoid a current-limiting resistor (see the IVREF specification in Table 5-33).
I/O pads should be protected if at any point the I/O voltage has a possibility of going outside the limits shown in the table. If the part is unpowered, the I/O pad voltage and current must be limited (as shown in this table) to avoid powering the part through the I/O pad, which can potentially cause irreversible damage.
MIN and MAX leakage current for the case when the I/O is voltage protected to VIO MIN or VIO MAX.
If the I/O pad is not voltage limited, it should be current limited (to IINJ+ and IINJ-) if there is any possibility of the pad voltage exceeding the VIO limits (including transient behavior during supply ramp up, or at any time when the part is unpowered).

External Peripheral Interface (EPI)

Table 5-27 lists the load conditions used to characterize the EPI interface.

Table 5-27 EPI Interface Load Conditions

SIGNALS LOAD VALUE (CL)
EPI0S[35:0] SDRAM interface 30 pF
EPI0S[35:0] General-Purpose interface
EPI0S[35:0] Host-Bus interface
EPI0S[35:0] PSRAM interface 40 pF

When the EPI module is in SDRAM mode, EPI CLK (EPI0S31) must be configured to 12 mA. The EPI data bus can be configured to 8 mA. Table 5-28 lists the rise and fall times in SDRAM mode.

Table 5-28 EPI SDRAM Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tSDRAMR EPI rise time (from 20% to 80% of VDD) 12-mA drive, CL = 30 pF 2 3 ns
tSDRAMF EPI fall time (from 80% to 20% of VDD) 12-mA drive, CL = 30 pF 2 3 ns

Table 5-29 lists the switching characteristics of the SDRAM interface.

Table 5-29 EPI SDRAM Interface Characteristics

over operating free-air temperature (unless otherwise noted) (1) (see Figure 5-16, Figure 5-17, and Figure 5-18)
NO. PARAMETER MIN TYP MAX UNIT
E1 tCK SDRAM clock period 16.67 ns
E2 tCH SDRAM clock high time 8.33 ns
E3 tCL SDRAM clock low time 8.33 ns
E4 tCOV CLK to output valid 4 ns
E5 tCOI CLK to output invalid 4 ns
E6 tCOT CLK to output tristate 4 ns
E7 tS Input set up to CLK 8.5 ns
E8 tH CLK to input hold 0 ns
E9 tPU Power-up time 100 µs
E10 tRP Precharge all banks 20 ns
E11 tRFC Auto refresh 66 ns
E12 tMRD Program mode register 2 EPI CLK
The EPI SDRAM interface must use 12-mA drive.
MSP432E401Y epi_sdram_init_lode_mode_reg.gif
If CS is high at clock high time, all applied commands are NOP.
The Mode register can be loaded before the autorefresh cycles.
JEDEC and PC100 specify 3 clock cycles.
Outputs are Hi-Z after the command is issued.
Figure 5-16 SDRAM Initialization and Load Mode Register Timing
MSP432E401Y epi_sdram_burst_readT.gif Figure 5-17 SDRAM Read Timing
MSP432E401Y epi_sdram_burst_writeT.gif Figure 5-18 SDRAM Write Timing

Table 5-30 lists the characteristics of the Host-Bus 8 and Host-Bus 16 interface.

Table 5-30 EPI Host-Bus 8 and Host-Bus 16 Interface Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-19, Figure 5-20, Figure 5-21, and Figure 5-22)
NO. PARAMETER MIN TYP MAX UNIT
E14 tISU Read data set up time 10 ns
E15 tIH Read data hold time 0 ns
E16 tDV WRn to write data valid 3.6 ns
E17 tDI Data hold from WRn invalid 1 EPI clock cycles
E18 tOV ALE/CSn to output valid 4 ns
E19 tOINV CSn to output invalid 4 ns
E20 tSTLOW WRn / RDn strobe duration low 1 EPI clock cycles
E21 tALEHIGH ALE duration high 1 EPI clock cycles
E22 tCSLOW CSn duration low 2 EPI clock cycles
E23 tALEST ALE rising to WRn / RDn strobe falling 2 EPI clock cycles
E24 tALEADD ALE falling to Address high impedance 1 EPI clock cycles
MSP432E401Y epi_hb_read.gif Figure 5-19 Host-Bus 8/16 Asynchronous Mode Read Timing
MSP432E401Y epi_hb_write.gif Figure 5-20 Host-Bus 8/16 Asynchronous Mode Write Timing
MSP432E401Y epi_hb_read_mux.gif Figure 5-21 Host-Bus 8/16 Mode Asynchronous Muxed Read Timing
MSP432E401Y epi_hb_write_mux.gif Figure 5-22 Host-Bus 8/16 Mode Asynchronous Muxed Write Timing

Table 5-31 lists the switching characteristics of the general-purpose interface.

Table 5-31 EPI General-Purpose Interface Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-23)
NO. PARAMETER MIN TYP MAX UNIT
E25 tCK General-purpose clock period 16.67 ns
E26 tCH General-purpose clock high time 8.33 ns
E27 tCL General-purpose clock low time 8.33 ns
E28 tISU Input signal set up time to rising clock edge 8.50 ns
E29 tIH Input signal hold time from rising clock edge 0 ns
E30 tDV Falling clock edge to output valid 4 ns
E31 tDI Falling clock edge to output invalid 4 ns
MSP432E401Y epi_gp_read.gif

NOTE:

This figure shows accesses when the FRM50 bit is clear, the FRMCNT field is 0x0, and the WR2CYC bit is clear.
Figure 5-23 General-Purpose Mode Read and Write Timing

Table 5-32 lists the switching characteristics of the PSRAM interface.

Table 5-32 EPI PSRAM Interface Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-24 and Figure 5-25)
NO. PARAMETER MIN TYP MAX UNIT
E33 tEPICLK EPI_CLK period 20 ns
E34 tRTFT EPI_CLK rise or fall time 1.8 ns
E35 tOV Falling EPI_CLK to address/write data or control output valid (1) 4.5 20 ns
E36 tHT Falling EPI_CLK to address/write data or control hold time (1) 2 ns
E37 tSUP Read data setup time from EPI_CLK rising 9 ns
E38 tDH Read data output hold from EPI_CLK rising 0 ns
E39 tIRV iRDY setup time 9 ns
E40 tIRH iRDY hold time 9 ns
Control output includes WRn, RDn, OEn, BSELn, ALE, and CSn.
MSP432E401Y epi_psram_burst_read.gif Figure 5-24 PSRAM Single Burst Read
MSP432E401Y epi_psram_burst_write.gif Figure 5-25 PSRAM Single Burst Write

Analog-to-Digital Converter (ADC)

Table 5-33 lists the electrical characteristics for the ADC at 1 Msps.

Table 5-33 Electrical Characteristics for ADC at 1 Msps

VREF+ = 3.3 V, fADC = 16 MHz (unless otherwise noted)(1)
PARAMETER MIN TYP MAX UNIT
Power supply requirements
VDDA ADC supply voltage 2.97 3.3 3.63 V
GNDA ADC ground voltage 0 V
VDDA and GNDA voltage reference
CREF Voltage reference decoupling capacitance 1.0 // 0.01 (2) µF
External voltage reference input
VREFA+ Positive external voltage reference for ADC, when VREF field in the ADCCTL register is 0x1(3) 2.4 VDDA VDDA V
VREFA- Negative external voltage reference for ADC, when VREF field in the ADCCTL register is 0x1(3) GNDA GNDA 0.3 V
IVREF Current on VREF+ input, using external VREF+ = 3.3 V 330.5 440 µA
ILVREF DC leakage current on VREF+ input when external VREF disabled 2.0 µA
CREF External reference decoupling capacitance (3) 1.0 // 0.01 (2) µF
Analog input
VADCIN Single-ended, full-scale analog input voltage, internal reference (4) (5) 0 VDDA V
Differential, full-scale analog input voltage, internal reference (4)(6) –VDDA VVDDA
Single-ended, full-scale analog input voltage, external reference (3) (5) VREFA- VREFA+
Differential, full-scale analog input voltage, external reference(3)(7) –(VREFA+ – VREFA-) VREFA+ – VREFA-
VINCM Input common-mode voltage, differential mode(8) [(VREFA+ + VREFA-) / 2] ±0.025 V
IL ADC input leakage current(9) 2.0 µA
RADC ADC equivalent input resistance (9) 2.5
CADC ADC equivalent input capacitance (9) 10 pF
RS Analog source resistance (9) 500 Ω
Sampling dynamics
fADC ADC conversion clock frequency(10) 16 MHz
fCONV ADC conversion rate

1 Msps
tS ADC sample time 250 ns
tC ADC conversion time (11) 1 µs
tLT Latency from trigger to start of conversion 2 ADC clock cycles
System performance when using external reference (12) (13)
N Resolution

12 bits
INL Integral nonlinearity error, over full input range ±1.5 ±3.0 LSB
DNL Differential nonlinearity error, over full input range ±0.8 +2.0/–1.0 (14) LSB
EO Offset error ±1.0 ±3.0 LSB
EG Gain error (15) ±2.0 ±3.0 LSB
ET Total unadjusted error, over full input range (16) ±2.5 ±4.0 LSB
System performance when using internal reference
N Resolution

12 bits
INL Integral nonlinearity error, over full input range ±1.5 ±3.0 LSB
DNL Differential nonlinearity error, over full input range ±0.8 +2.0/–1.0 (14) LSB
EO Offset error ±5.0 ±15.0 LSB
EG Gain error (15) ±10.0 ±30.0 LSB
ET Total unadjusted error, over full input range (16) ±10.0 ±30.0 LSB
Dynamic characteristics (12) (17)
SNRD Signal-to-noise-ratio, Differential input, VADCIN: –20 dB FS, 1 kHz (18) 70 72 dB
SDRD Signal-to-distortion ratio, Differential input, VADCIN: –3 dB FS, 1 kHz (18) (19) (20) 72 75 dB
SNDRD Signal-to-Noise+Distortion ratio, Differential input, VADCIN: –3 dB FS, 1 kHz (18) (21) (22) 68 70 dB
SNRS Signal-to-noise-ratio, Single-ended input, VADCIN: –20 dB FS, 1 kHz (23) 60 65 dB
SDRS Signal-to-distortion ratio, Single-ended input, VADCIN: –3 dB FS, 1 kHz (19) (20) 70 72 dB
SNDRS Signal-to-Noise+Distortion ratio, Single-ended input, VADCIN: –3 dB FS, 1 kHz (23) (21) (22) 60 63 dB
Temperature sensor
VTSENS Temperature sensor voltage, junction temperature 25°C 1.633 V
STSENS Temperature sensor slope at:
–40°C to 105°C ambient (extended temperature part)
–13.3 mV/°C
ETSENS Temperature sensor accuracy (24) at:
–40°C to 105°C ambient (extended temperature part)
±5 °C
Best design practices suggest placing static or quiet digital I/O signals adjacent to sensitive analog inputs to reduce capacitive coupling and crosstalk. Unexpected results can occur if a switching digital I/O is placed adjacent to an ADC input channel or voltage reference input. In addition, analog signals that are adjacent to ADC input channels or reference inputs must meet the RADC equivalent input resistance given in this table and must be band-limited to 100 kHz or lower.
Two capacitors in parallel. These capacitors should be as close to the die as possible.
Assumes external filtering network between VREFA+ and VREFA- as shown in Figure 5-26. External reference noise level must be under 12-bit (–74 dB) full-scale input, over input bandwidth, measured at VREFA+ – VREFA-.
Internal reference is connected directly between VDDA and GNDA (VREFi = VDDA – GNDA). In this mode, EO, EG, ET, and dynamic specifications are adversely affected due to internal voltage drop and noise on VDDA and GNDA. Internal reference voltage is selected when VREF field in the ADCCTL register is 0x0.
VADCIN = VINP – VINN
With signal common-mode voltage as VDDA / 2.
With signal common-mode voltage as VREF+ + GNDA.
This parameter is defined as the average of the differential inputs.
As shown in Figure 5-27, RADC is the total equivalent resistance in the input line all the way up to the sampling node at the input of the ADC.
See Table 5-14 for full ADC clock frequency specification.
ADC conversion time (tC) includes the ADC sample time (tS).
A low-noise environment is assumed to obtain values close to specifications. The board must have good ground isolation between analog and digital grounds and a clean reference voltage. The input signal must be band-limited to Nyquist bandwidth. No antialiasing filter is provided internally.
ADC static measurements taken by averaging over several samples. At least 20-sample averaging is assumed to obtain expected typical or maximum specification values.
12-bit DNL
Gain error is measured at maximum code after compensating for offset. Gain error is equivalent to the full-scale error. It can be given in % of slope error, or in LSB, as done here.
Total unadjusted error is the maximum error at any one code versus the ideal ADC curve. It includes all other errors (offset error, gain error and INL) at any given ADC code.
ADC dynamic characteristics are measured using low-noise board design, with low-noise reference voltage (< –74-dB noise level in signal bandwidth) and low-noise analog supply voltage. Board noise and ground bouncing couple into the ADC and affect dynamic characteristics. A clean external reference must be used to achieve the listed specifications.
Differential signal with correct common-mode voltage, applied between two ADC inputs.
SDR = –THD in dB.
For higher-frequency inputs, expect degradation in SDR.
SNDR = S/(N+D) = SINAD (in dB)
Effective number of bits (ENOB) can be calculated from SNDR: ENOB = (SNDR – 1.76) / 6.02.
Single-ended inputs are more sensitive to board and trace noise than differential inputs; SNR and SNDR measurements on single-ended inputs are highly dependent on how clean the test setup is. If the input signal is not well isolated on the board, higher noise than specified could be seen at the ADC output.
This parameter does not include ADC error.

Table 5-34 lists the electrical characteristics for the ADC at 2 Msps.

Table 5-34 Electrical Characteristics for ADC at 2 Msps

VREF+ = 3.3 V, fADC = 32 MHz, over operating free-air temperature (unless otherwise noted) (see Figure 5-26 and Figure 5-27)(1)
PARAMETER MIN TYP MAX UNIT
Power supply requirements
VDDA ADC supply voltage 2.97 3.3 3.63 V
GNDA ADC ground voltage 0 V
VDDA and GNDA voltage reference
CREF Voltage reference decoupling capacitance 1.0 // 0.01 (2) µF
External voltage reference input
VREFA+ Positive external voltage reference for ADC, when VREF field in the ADCCTL register is 0x1(3) 2.4 VDDA VDDA V
VREFA- Negative external voltage reference for ADC, when VREF field in the ADCCTL register is 0x1 (3) GNDA GNDA 0.3 V
IVREF Current on VREF+ input, using external VREF+ = 3.3 V 330.5 440 µA
ILVREF DC leakage current on VREF+ input when external VREF disabled 2.0 µA
CREF External reference decoupling capacitance (3) 1.0 // 0.01 (2) µF
Analog input
VADCIN Single-ended, full-scale analog input voltage, internal reference(4)(5) 0 VDDA V
Differential, full-scale analog input voltage, internal reference (4)(6) –VDDA VVDDA
Single-ended, full-scale analog input voltage, external reference (3) (5) VREFA- VREFA+
Differential, full-scale analog input voltage, external reference (3)(7) –(VREFA+ – VREFA-) VREFA+ – VREFA-
VINCM Input common-mode voltage, differential mode (8) [(VREFA+ + VREFA-) / 2] ±0.025 V
IL ADC input leakage current(9) 2.0 µA
RADC ADC equivalent input resistance (9) 2.5
CADC ADC equivalent input capacitance (9) 10 pF
RS Analog source resistance (9) 250 Ω
Sampling dynamics
fADC ADC conversion clock frequency(10) 32 MHz
fCONV ADC conversion rate 2 Msps
tS ADC sample time 125 ns
tC ADC conversion time (11) 0.5 µs
tLT Latency from trigger to start of conversion 2 ADC clock cycles
System performance when using external reference (12) (13)
N Resolution

12 bits
INL Integral nonlinearity error, over full input range ±1.5 ±3.0 LSB
DNL Differential nonlinearity error, over full input range ±0.8 +2.0/–1.0 (14) LSB
EO Offset error ±1.0 ±3.0 LSB
EG Gain error (15) ±2.0 ±3.0 LSB
ET Total unadjusted error, over full input range (16) ±2.5 ±4.0 LSB
System performance when using internal reference
N Resolution

12 bits
INL Integral nonlinearity error, over full input range ±1.5 ±3.0 LSB
DNL Differential nonlinearity error, over full input range ±0.8 +2.0/–1.0 (14) LSB
EO Offset error ±5.0 ±15.0 LSB
EG Gain error (15) ±10.0 ±30.0 LSB
ET Total unadjusted error, over full input range (16) ±10.0 ±30.0 LSB
Dynamic characteristics (17) (18)
SNRD Signal-to-noise-ratio, differential input, VADCIN: –20 dB FS, 1 kHz (19) 68 72 dB
SDRD Signal-to-distortion ratio, differential input, VADCIN: –3 dB FS, 1 kHz (19) (20) (21) 70 75 dB
SNDRD Signal-to-noise+distortion ratio, differential input, VADCIN: –3 dB FS, 1 kHz (19) (22) (23) 65 70 dB
SNRS Signal-to-noise-ratio, single-ended input, VADCIN: –20 dB FS, 1 kHz (24) 58 65 dB
SDRS Signal-to-distortion ratio, single-ended input, VADCIN: –3 dB FS, 1 kHz (20) (21) 68 72 dB
SNDRS Signal-to-noise+distortion ratio, single-ended input, VADCIN: –3 dB FS, 1 kHz (24) (22) (23) 58 63 dB
Best design practices suggest placing static or quiet digital I/O signals adjacent to sensitive analog inputs to reduce capacitive coupling and crosstalk. Unexpected results can occur if a switching digital I/O is placed adjacent to an ADC input channel or voltage reference input. In addition, analog signals configured adjacent to ADC input channels or reference inputs must meet the RADC equivalent input resistance given in this table and must be band-limited to 100 kHz or lower.
Two capacitors in parallel. These capacitors should be as close to the die as possible.
Assumes external filtering network between VREFA+ and VREFA- as shown in Figure 5-26. External reference noise level must be under 12-bit (–74-dB) full scale input, over input bandwidth, measured at VREFA+ – VREFA-.
Internal reference is connected directly between VDDA and VGNDA (VREFi = VDDA – VGNDA). In this mode, EO, EG, ET, and dynamic specifications are adversely affected due to internal voltage drop and noise on VDDA and GNDA. Internal reference voltage is selected when VREF field in the ADCCTL register is 0x0.
VADCIN = VINP – VINN
With signal common-mode voltage as VDDA / 2.
With signal common-mode voltage as (VREF+ + VREF-) / 2.
This parameter is defined as the average of the differential inputs.
As shown in Figure 5-27, RADC is the total equivalent resistance in the input line all the way up to the sampling node at the input of the ADC.
See Table 5-14 for full ADC clock frequency specification.
ADC conversion time (tC) includes the ADC sample time (tS).
A low-noise environment is assumed to obtain values close to specifications. The board must have good ground isolation between analog and digital grounds, a clean reference voltage is assumed, and input signal must be bandlimited to Nyquist bandwidth. No antialiasing filter is provided internally.
ADC static measurements taken by averaging over several samples. At least 20-sample averaging is assumed to obtain expected typical or maximum specification values.
12-bit DNL
Gain error is measured at maximum code after compensating for offset. Gain error is equivalent to"Full Scale Error." It can be given in % of slope error, or in LSB, as done here.
Total Unadjusted Error is the maximum error at any one code versus the ideal ADC curve. It includes all other errors (offset error, gain error and INL) at any given ADC code.
A low noise environment is assumed to obtain values close to spec. The board must have good ground isolation between analog and digital grounds and a clean reference voltage. The input signal must be band-limited to Nyquist bandwidth. No antialiasing filter is provided internally.
ADC dynamic characteristics are measured using low-noise board design, with low-noise reference voltage (< –74 dB noise level in signal BW) and low-noise analog supply voltage. Board noise and ground bouncing couple into the ADC and affect dynamic characteristics. Clean external reference must be used to achieve the listed specifications.
Differential signal with correct common-mode voltage, applied between two ADC inputs.
SDR = –THD in dB.
For higher-frequency inputs, expect degradation in SDR.
SNDR = S/(N+D) = SINAD (in dB)
Effective number of bits (ENOB) can be calculated from SNDR: ENOB = (SNDR – 1.76) / 6.02.
Single-ended inputs are more sensitive to board and trace noise than differential inputs; SNR and SNDR measurements on single-ended inputs are highly dependent on how clean the test setup is. If the input signal is not well isolated on the board, higher noise than specified could be seen at the ADC output.
MSP432E401Y adc_vref.gif Figure 5-26 ADC External Reference Filtering
MSP432E401Y adc_input_equiv.gif Figure 5-27 ADC Input Equivalency

Synchronous Serial Interface (SSI)

Table 5-35 SSI Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-28, Figure 5-29, and Figure 5-30)
NO. PARAMETER MIN TYP MAX UNIT
S1 tCLK_PER SSIClk cycle time As master(1) 16.67 ns
As slave(2) 100
S2 tCLK_HIGH SSIClk high time As master 8.33 ns
As slave 50
S3 tCLK_LOW SSIClk low time As master 8.33 ns
As slave 50
S4 tCLKR SSIClk rise time(3) 1.25 ns
S5 tCLKF SSIClk fall time (3) 1.25 ns
S6 tTXDMOV Master mode: master Tx data output (to slave) valid time from edge of SSIClk 4.00 ns
S7 tTXDMOH Master mode: master Tx data output (to slave) hold time after next SSIClk 0.60 ns
S8 tRXDMS Master mode: master Rx data In (from slave) setup time 7.89 ns
S9 tRXDMH Master mode: master Rx data In (from slave) hold time 0 ns
S10 tTXDSOV Slave mode: master Tx data output (to master) valid time from edge of SSIClk 47.60(4) ns
S11 tTXDSOH Slave mode: slave Tx data output (to master) hold time from next SSIClk 37.4(5) ns
S13 tRXDSSU Slave mode: Rx data in (from master) setup time 0 ns
S14 tRXDSH Slave mode: Rx data in (from master) hold time 37.03(6) ns
In master mode, the system clock must be at least twice as fast as the SSIClk.
In slave mode, the system clock must be at least 12 times faster than the SSIClk.
The delays shown are using 12-mA drive strength.
This MAX value is for the minimum slave mode tSYSCLK period (8.33 ns). To find the MAX tTXDSOV value for a larger tSYSCLK, use the equation: 4 × tSYSCLK + 14.25.
This MIN value is for the minimum slave mode tSYSCLK (8.33 ns). To find the MIN tTXDSOH value for a larger tSYSCLK, use the equation: 4 × tSYSCLK + 4.08.
This MIN value is for the minimum slave mode tSYSCLK (8.33 ns). To find the MIN tTXDSH value for a larger tSYSCLK, use the equation: 4 × tSYSCLK + 3.70.
MSP432E401Y LMI-SSI-Timing_ti_blizzard.gif Figure 5-28 SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement
MSP432E401Y SSI_Timing_SPI_blizzard-master.gif Figure 5-29 Master Mode SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1
MSP432E401Y SSI_Timing_SPI_blizzard-slave.gif Figure 5-30 Slave Mode SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

Table 5-36 lists the characteristics for Bi-SSI and Quad-SSI.

Table 5-36 Bi- and Quad-SSI Characteristics(1)

over operating free-air temperature (unless otherwise noted)
NO. PARAMETER MIN TYP MAX UNIT
S15 tCLK_PER SSIClk cycle time, as master (2) 16.67 ns
S16 tCLK_HIGH SSIClk high time, as master 8.33 ns
S17 tCLK_LOW SSIClk low time, as master 8.33 ns
S18 tCLKR SSIClk rise time (3) 1.25 ns
S19 tCLKF SSIClk fall time (3) 1.25 ns
S20 tTXDMOV Master mode: master SSInXDATn data output (to slave) valid time from edge of SSIClk 4.04 ns
S21 tTXDMOH Master mode: master SSInXDATn data output (to slave) hold time after next SSIClk 0.60 ns
S22 tRXDMS Master mode: master SSInXDATn data in (from slave) setup time 5.78 ns
S23 tRXDMH Master mode: master SSInXDATn data in (from slave) hold time 0 ns
Parameters S15 to S23 correspond to parameters S1 to S9 in Figure 5-28 and Figure 5-29.
In master mode, the system clock must be at least twice as fast as the SSIClk.
The delays shown are using 12-mA drive strength.

Inter-Integrated Circuit (I2C) Interface

Table 5-37 lists the characteristics for the I2C interface.

Table 5-37 I2C Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-31)
NO. PARAMETER MIN TYP MAX UNIT
I1(1) tSCH Start condition hold time 36 system clock cycles
I2 (1) tLP Clock low period 36 system clock cycles
I3 (2) tSRT I2CSCL and I2CSDA rise time (VIL = 0.5 V to V IH = 2.4 V) See (2) ns
I4 tDH Data hold time Slave 2 system clock cycles
Master 7
I5 (3) tSFT I2CSCL and I2CSDA fall time (VIH = 2.4 V to V IL = 0.5 V) 9 10 ns
I6 (1) tHT Clock high time 24 system clock cycles
I7 tDS Data setup time 18 system clock cycles
I8 (1) tSCSR Start condition setup time (for repeated start condition only) 36 system clock cycles
I9 (1) tSCS Stop condition setup time 24 system clock cycles
I10 tDV Data valid Slave 2 system clock cycles
Master (6 × (1 + TPR)) + 1 system clock cycles
Values depend on the value programmed into the TPR bit in the I2C Master Timer Period (I2CMTPR) register; a TPR programmed for the maximum I2CSCL frequency (TPR = 0x2) results in a minimum output timing listed in this table. The I2C interface is designed to scale the actual data transition time to move it to the middle of the I2CSCL low period. The actual position is affected by the value programmed into the TPR; however, the values in this table are minimum values.
Because I2CSCL and I2CSDA operate as open-drain-type signals, which the controller can only actively drive low, the time I2CSCL or I2CSDA takes to reach a high level depends on external signal capacitance and pullup resistor values.
Specified at a nominal 50-pF load
MSP432E401Y LMI_I2C_Timing.gif Figure 5-31 I2C Timing

Ethernet Controller

DC Characteristics

The parameters listed in Table 5-38, with the exception of RBIAS, apply to transmit pins of the Ethernet PHY, which are generally the EN0TXOP and EN0TXON signals during standard operation but can also be the EN0RXIN and EN0RXIP signals if Auto-MDIX is enabled.

Table 5-38 Ethernet PHY DC Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
RBIAS Value of the pulldown resistor on the RBIAS pin 4.82 4.87 4.92
VTPTD_100 100M transmit voltage 0.95 1 1.05 V
VTPTDSYM 100M transmit voltage symmetry –2% 2%
VOVRSHT Output overshoot 5%
VTPTD_10 10M transmit voltage 2.2 2.5 2.8 V
VTH1 10Base-T Receive threshold 200 mV

Clock Characteristics for Ethernet

Table 5-39 lists the specifications of the MOSC 25-MHz crystal.

Table 5-39 MOSC 25-MHz Crystal Specification(1)

over operating free-air temperature (unless otherwise noted) (see Figure 5-32)
NO. PARAMETER MIN TYP MAX UNIT
N1 fMOSC25 Frequency 25 MHz
fTOL Frequency tolerance at operational temperature 0 ±50 ppm
fSTA Frequency stability at 1-year aging ±5 ppm
See Table 5-12 for additional MOSC requirements.
MSP432E401Y Ethernet_Crystal_Specs.gif Figure 5-32 MOSC Crystal Characteristics for Ethernet

Table 5-40 lists the specifications of the single-ended 25-MHz oscillator.

Table 5-40 MOSC Single-Ended 25-MHz Oscillator Specification (1)

over operating free-air temperature (unless otherwise noted) (see Figure 5-33)
NO. PARAMETER MIN TYP MAX UNIT
N4 fOSC Frequency 25 MHz
fTOL Frequency tolerance at operational temperature 0 ±50 ppm
tSTA Frequency stability at 1-year aging ±50 ppm
N5 tRF Frequency rise and fall time 1 ns
tJ Jitter Cycle to cycle 50 ps
Over 10 ms 1 ns
DC Duty cycle 40% 60%
MSP432E401Y Ethernet_Oscillator_Specs.gif Figure 5-33 Single-Ended MOSC Characteristics for Ethernet

AC Characteristics

Table 5-41 lists the timing characterists of the enable and reset.

Table 5-41 Ethernet Controller Enable and Software Reset Timing

over operating free-air temperature (unless otherwise noted) (see Figure 5-34)
NO. PARAMETER MIN TYP MAX UNIT
N16 tEN Time from the System Control enable of the PHY to energy on the PMD output pin (1) (2) 45 µs
N17 tSWRST Time from software reset of the PHY to energy on the PMD output pin 110 ns
The PHY is enabled through System Control by setting the P0 bit in the PCEPHY register and the R0 bit in the RCGCPHY register.
This minimum timing assumes the PHYHOLD bit in the EMACPC register is not set.
MSP432E401Y Ethernet_Software_Reset.gif Figure 5-34 Reset Timing

Table 5-42 lists the 100Base-TX transmit timing.

Table 5-42 100Base-TX Transmit Timing

over operating free-air temperature (unless otherwise noted) (see Figure 5-35)
NO. PARAMETER MIN TYP MAX UNIT
N38 tRF 100-Mbps PMD output pair tR and tF (1) 3 4 5 ns
tRF_MM 100-Mbps tR and tF symmetry (2) (3) 500 ps
N39 tRF_JTTR 100-Mbps PMD output pair transmit jitter 1.4 ns
Rise and fall times taken at 10% and 90% of the +1 or –1 amplitude.
Normal mismatch is the difference between the maximum and minimum of all rise and fall times
Choice of Ethernet transformer magnetics can affect this parameter.
MSP432E401Y Ethernet_100Base-T_TX_RF_Jitter.gif Figure 5-35 100 Base-TX Transmit Timing

Table 5-43 lists the 10Base-T normal link pulse timing.

Table 5-43 10Base-T Normal Link Pulse Timing

over operating free-air temperature (unless otherwise noted) (see Figure 5-36)
NO. PARAMETER MIN TYP MAX UNIT
N69 tLP_PER Link pulse period 76 ms
N70 tLP_WID Link pulse width 100 µs
MSP432E401Y Ethernet_10BaseT_Link_Pulse.gif Figure 5-36 10Base-TX Normal Link Pulse Timing

Table 5-44 lists the Auto-Negotiation FLP timing.

Table 5-44 Auto-Negotiation Fast Link Pulse (FLP) Timing

over operating free-air temperature (unless otherwise noted) (see Figure 5-37)
NO. PARAMETER MIN TYP MAX UNIT
N72 tCLKP Clock pulse to clock pulse period 125 µs
N73 tCLKDP Clock pulse to data pulse period 62 µs
N74 tPUL Clock, data pulse width 110 ns
N75 tBRSTP FLP burst to flp burst period 16 ms
N76 tBRSTW Burst width 2 ms
MSP432E401Y Ethernet_Auto_Neg_Fast_Link_Pulse.gif Figure 5-37 Auto-Negotiation Fast Link Pulse Timing

Table 5-45 lists the 100Base-TX signal detect timing.

Table 5-45 100Base-TX Signal Detect Timing

over operating free-air temperature (unless otherwise noted) (see Figure 5-38)
NO. PARAMETER MIN TYP MAX UNIT
N79 tON SD internal turnon time 100 µs
N80 tOFF Internal turnoff time 200 µs
MSP432E401Y Ethernet_10BaseT_Signal_Detect.gif Figure 5-38 100Base-TX Signal Detect Timing

Universal Serial Bus (USB) Controller

The USB controller electrical specifications are compliant with the Universal Serial Bus Specification Rev 2.0 (full-speed and low-speed support) and the On-The-Go Supplement to the USB 2.0 Specification Rev 1.0. Some components of the USB system are integrated within the microcontroller and specific to the microcontroller design.

NOTE

GPIO pin PB1, which can be configured as the USB0VBUS signal, is the only pin that is 5-V tolerant on the device.

Table 5-46 lists the timing characteristics of the ULPI interface.

Table 5-46 ULPI Interface Timing

over operating free-air temperature (unless otherwise noted) (see Figure 5-39)
NO. PARAMETER MIN TYP MAX UNIT
Timings with respect to external clock source input to USB0CLK
U1 tSUC Setup time (control in) USB0DIR, USB0NXT 4.8 ns
U2 tSUD Setup time (data in) USB0Dn 3.5 ns
U3 tHTC Hold time (control in) USB0DIR, USB0NXT 0 ns
U4 tHTD Hold time (data in) USB0Dn 0 ns
U5 tODC Output delay (control out) USB0STP 3.7 9.5 ns
U6 tODD Output delay (data out) USB0Dn 3.7 9.5 ns
Timings with USB0CLK as clock output
U1 tSUC Setup time (control in) USB0DIR, USB0NXT 6.0 ns
U2 tSUD Setup time (data in) USB0Dn 4.6 ns
U3 tHTC Hold time (control in) USB0DIR, USB0NXT 0 ns
U4 tHTD Hold time (data in) USB0Dn 0 ns
U5 tODC Output delay (control out) USB0STP 4.0 10.6 ns
U6 tODD Output delay (data out) USB0Dn 4.0 10.6 ns
MSP432E401Y usb_ulpi_fig.gif Figure 5-39 ULPI Interface Timing Diagram

Analog Comparator

Table 5-47 lists the characteristics of the comparator.

Table 5-47 Analog Comparator Characteristics

over operating free-air temperature (unless otherwise noted) (1) (2)
PARAMETER MIN TYP MAX UNIT
VINP, VINN (3) Input voltage range GNDA VDDA V
VCM Input common-mode voltage range GNDA VDDA V
VOS Input offset voltage ±10 ±50 (5) mV
IINP, IINN Input leakage current over full voltage range 2.0 µA
CMRR Common-mode rejection ratio 50 dB
tRT Response time 1.0 (4) µs
tMC Comparator mode change to output valid 10 µs
Best design practices suggest placing static or quiet digital I/O signals adjacent to sensitive analog inputs to reduce capacitive coupling and crosstalk.
To achieve best analog results, keep the source resistance driving the analog inputs, VINP and VINN, low.
The external voltage inputs to the analog comparator are designed to be highly sensitive and can be affected by external noise on the board. For this reason, VINP and VINN must be set to different voltage levels during idle states to ensure the analog comparator triggers are not enabled. If an internal voltage reference is used, it should be set to a mid-supply level. When operating in sleep or deep-sleep modes, disable the analog comparator module or set the external voltage inputs to different levels (greater than the input offset voltage) to achieve minimum current draw.
Measured at external VREF = 100 mV, input signal switching from 75 mV to 125 mV
Measured at VREF = 100 mV

Table 5-48 lists the characteristics for the comparator.

Table 5-48 Analog Comparator Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
RHR Resolution in high range VDDA / 29.4 V
RLR Resolution in low range VDDA / 22.12 V
AHR Absolute accuracy high range ±RHR / 2 V
ALR Absolute accuracy low range ±RLR / 2 V

Table 5-49 and Table 5-50 list the reference voltages for the comparator under different conditions.

Table 5-49 Analog Comparator Voltage Reference Characteristics

VDDA = 3.3 V, EN = 1, RNG = 0, over operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIREF Reference voltage VREF = 0x0 0.731 0.786 0.841 V
VREF = 0x1 0.843 0.898 0.953
VREF = 0x2 0.955 1.010 1.065
VREF = 0x3 1.067 1.122 1.178
VREF = 0x4 1.180 1.235 1.290
VREF = 0x5 1.292 1.347 1.402
VREF = 0x6 1.404 1.459 1.514
VREF = 0x7 1.516 1.571 1.627
VREF = 0x8 1.629 1.684 1.739
VREF = 0x9 1.741 1.796 1.851
VREF = 0xA 1.853 1.908 1.963
VREF = 0xB 1.965 2.020 2.076
VREF = 0xC 2.078 2.133 2.188
VREF = 0xD 2.190 2.245 2.300
VREF = 0xE 2.302 2.357 2.412
VREF = 0xF 2.414 2.469 2.525

Table 5-50 Analog Comparator Voltage Reference Characteristics

VDDA = 3.3 V, EN = 1, RNG = 1, over operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIREF Reference voltage VREF = 0x0 0.000 0.000 0.074 V
VREF = 0x1 0.076 0.149 0.223
VREF = 0x2 0.225 0.298 0.372
VREF = 0x3 0.374 0.448 0.521
VREF = 0x4 0.523 0.597 0.670
VREF = 0x5 0.672 0.746 0.820
VREF = 0x6 0.822 0.895 0.969
VREF = 0x7 0.971 1.044 1.118
VREF = 0x8 1.120 1.193 1.267
VREF = 0x9 1.269 1.343 1.416
VREF = 0xA 1.418 1.492 1.565
VREF = 0xB 1.567 1.641 1.715
VREF = 0xC 1.717 1.790 1.864
VREF = 0xD 1.866 1.939 2.013
VREF = 0xE 2.015 2.089 2.162
VREF = 0xF 2.164 2.238 2.311

Pulse-Width Modulator (PWM)

Table 5-51 lists the PWM timing characteristics.

Table 5-51 PWM Timing Characteristics

over operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
tFLTW Minimum fault pulse width 2 PWM clock periods
tFLTMAX MnFAULTn assertion to PWM inactive (1) 24 + (1 PWM clock) ns
tFLTMIN MnFAULTn deassertion to PWM active (2) 5 ns
This parameter value can vary depending on the PWM clock frequency which is controlled by the System Clock and a programmable divider field in the PWMCC register.
The latch and minimum fault period functions that can be enabled in the PWMnCTL register can change the timing of this parameter.

Emulation and Debug

Table 5-52 lists the JTAG characteristics.

Table 5-52 JTAG Characteristics

over operating free-air temperature (unless otherwise noted) (see Figure 5-40 and Figure 5-41)
NO. PARAMETER MIN TYP MAX UNIT
J1 fTCK TCK operational clock frequency 0 10 MHz
J2 tTCK TCK operational clock period 100 ns
J3 tTCK_LOW TCK clock low time tTCK / 2 ns
J4 tTCK_HIGH TCK clock high time tTCK / 2 ns
J5 tTCK_R TCK rise time 0 10 ns
J6 tTCK_F TCK fall time 0 10 ns
J7 tTMS_SU TMS setup time to TCK rise 8 ns
J8 tTMS_HLD TMS hold time from TCK rise 4 ns
J9 tTDI_SU TDI setup time to TCK rise 18 ns
J10 tTDI_HLD TDI hold time from TCK rise 4 ns
J11 tTDO_ZDV TCK fall to data valid from Hi-Z 2-mA drive 13 35 ns
4-mA drive 9 26
8-mA drive 8 26
8-mA drive with slew rate control 10 29
10-mA drive 11 13
12-mA drive 11 14
J12 tTDO_DV TCK fall to data valid from data valid 2-mA drive 14 20 ns
4-mA drive 10 26
8-mA drive 8 21
8-mA drive with slew rate control 10 26
10-mA drive 12 14
12-mA drive 12 15
J13 tTDO_DVZ TCK fall to Hi-Z from data valid 2-mA drive 7 16 ns
4-mA drive 7 16
8-mA drive 7 16
8-mA drive with slew rate control 8 19
10-mA drive 20 22
12-mA drive 20 25
MSP432E401Y LMI-JTAG-Timing1.gif Figure 5-40 JTAG Test Clock Input Timing
MSP432E401Y LMI-JTAG-Timing3.gif Figure 5-41 JTAG Test Access Port (TAP) Timing