SLASF88B October   2023  – May 2024 MSPM0G3505-Q1 , MSPM0G3506-Q1 , MSPM0G3507-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
    3. 6.3 Signal Descriptions
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 Power Supply Ramp
        1. 7.6.1.1 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 SYSOSC Typical Frequency Accuracy
        1. 7.9.2.1 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 System Phase Lock Loop (SYSPLL)
      4. 7.9.4 Low Frequency Crystal/Clock
      5. 7.9.5 High Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1 Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
    13. 7.13 Typical Connection Diagram
    14. 7.14 Temperature Sensor
    15. 7.15 VREF
      1. 7.15.1 Voltage Characteristics
      2. 7.15.2 Electrical Characteristics
    16. 7.16 Comparator (COMP)
      1. 7.16.1 Comparator Electrical Characteristics
    17. 7.17 DAC
      1. 7.17.1 DAC_Supply Specifications
      2. 7.17.2 DAC Output Specifications
      3. 7.17.3 DAC Dynamic Specifications
      4. 7.17.4 DAC Linearity Specifications
      5. 7.17.5 DAC Timing Specifications
    18. 7.18 GPAMP
      1. 7.18.1 Electrical Characteristics
      2. 7.18.2 Switching Characteristics
    19. 7.19 OPA
      1. 7.19.1 Electrical Characteristics
      2. 7.19.2 Switching Characteristics
      3. 7.19.3 PGA Mode
    20. 7.20 I2C
      1. 7.20.1 I2C Characteristics
      2. 7.20.2 I2C Filter
        1. 7.20.2.1 I2C Timing Diagram
    21. 7.21 SPI
      1. 7.21.1 SPI
      2. 7.21.2 SPI Timing Diagram
    22. 7.22 UART
    23. 7.23 TIMx
    24. 7.24 TRNG
      1. 7.24.1 TRNG Electrical Characteristics
      2. 7.24.2 TRNG Switching Characteristics
    25. 7.25 Emulation and Debug
      1. 7.25.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  CPU
    2. 8.2  Operating Modes
      1. 8.2.1 Functionality by Operating Mode (MSPM0G350x)
    3. 8.3  Power Management Unit (PMU)
    4. 8.4  Clock Module (CKM)
    5. 8.5  DMA
    6. 8.6  Events
    7. 8.7  Memory
      1. 8.7.1 Memory Organization
      2. 8.7.2 Peripheral File Map
      3. 8.7.3 Peripheral Interrupt Vector
    8. 8.8  Flash Memory
    9. 8.9  SRAM
    10. 8.10 GPIO
    11. 8.11 IOMUX
    12. 8.12 ADC
    13. 8.13 Temperature Sensor
    14. 8.14 VREF
    15. 8.15 COMP
    16. 8.16 DAC
    17. 8.17 OPA
    18. 8.18 GPAMP
    19. 8.19 TRNG
    20. 8.20 AES
    21. 8.21 CRC
    22. 8.22 MATHACL
    23. 8.23 UART
    24. 8.24 I2C
    25. 8.25 SPI
    26. 8.26 CAN-FD
    27. 8.27 WWDT
    28. 8.28 RTC
    29. 8.29 Timers (TIMx)
    30. 8.30 Device Analog Connections
    31. 8.31 Input/Output Diagrams
    32. 8.32 Serial Wire Debug Interface
    33. 8.33 Bootstrap Loader (BSL)
    34. 8.34 Device Factory Constants
    35. 8.35 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC-Q100-002(2) ±2000 V
Charged device model (CDM), per AEC-Q100-011 , All pins(1) ±500 V
Charged device model (CDM), per AEC-Q100-011 , Corner pins(1) ±750 V
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.
(3) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.