SLAZ174O October   2012  – May 2021 MSP430F2370

 

  1. 1Functional Advisories
  2. 2Preprogrammed Software Advisories
  3. 3Debug Only Advisories
  4. 4Fixed by Compiler Advisories
  5. 5Nomenclature, Package Symbolization, and Revision Identification
    1. 5.1 Device Nomenclature
    2. 5.2 Package Markings
      1.      RHA40
      2.      YFF49
    3. 5.3 Memory-Mapped Hardware Revision (TLV Structure)
  6. 6Advisory Descriptions
    1. 6.1  BCL12
    2. 6.2  BCL13
    3. 6.3  BCL16
    4. 6.4  CPU14
    5. 6.5  CPU19
    6. 6.6  CPU45
    7. 6.7  EEM20
    8. 6.8  FLASH19
    9. 6.9  FLASH22
    10. 6.10 FLASH24
    11. 6.11 FLASH27
    12. 6.12 FLASH36
    13. 6.13 JTAG14
    14. 6.14 PORT10
    15. 6.15 SYS15
    16. 6.16 TA12
    17. 6.17 TA16
    18. 6.18 TA21
    19. 6.19 TAB22
    20. 6.20 TB2
    21. 6.21 TB16
    22. 6.22 TB24
    23. 6.23 USCI15
    24. 6.24 USCI16
    25. 6.25 USCI17
    26. 6.26 USCI18
    27. 6.27 USCI20
    28. 6.28 USCI21
    29. 6.29 USCI22
    30. 6.30 USCI23
    31. 6.31 USCI24
    32. 6.32 USCI25
    33. 6.33 USCI26
    34. 6.34 USCI27
    35. 6.35 USCI29
    36. 6.36 USCI30
    37. 6.37 USCI34
    38. 6.38 USCI35
    39. 6.39 USCI40
    40. 6.40 XOSC5
    41. 6.41 XOSC8
  7. 7Revision History

6.12 FLASH36

FLASH Module

Category

Functional

Function

Flash content may degrade due to aborted page erases

Description

If a page erase is aborted by EEIEX, the flash page containing the last instruction before erase operation will start to degrade. This effect is incremental and, after repetitions, may lead to corrupted flash content.

Workaround

- Use the EEI (interrupted erasing) feature instead of EEIEX (abort erasing).
or
- A PSA checksum can be calculated over affected flash page using the marginal read mode (marginal 0). If PSA sum differs from expected PSA value the affected flash page has to be reprogrammed.
or
- Start flash erasing from RAM and limit system frequency to <1MHz (to ensure 6-us delay after EEIEX).  If the last instruction before erasing is located in RAM, flash cell degradation does not occur.