SLAZ178T October   2012  – May 2021 MSP430F2418

 

  1. 1Functional Advisories
  2. 2Preprogrammed Software Advisories
  3. 3Debug Only Advisories
  4. 4Fixed by Compiler Advisories
  5. 5Nomenclature, Package Symbolization, and Revision Identification
    1. 5.1 Device Nomenclature
    2. 5.2 Package Markings
      1.      ZQW113
      2.      PM64
      3.      PN80
      4.      ZCA113
    3. 5.3 Memory-Mapped Hardware Revision (TLV Structure)
  6. 6Advisory Descriptions
    1. 6.1  ADC25
    2. 6.2  BCL12
    3. 6.3  BCL13
    4. 6.4  BCL15
    5. 6.5  CPU8
    6. 6.6  CPU16
    7. 6.7  CPU19
    8. 6.8  FLASH19
    9. 6.9  FLASH24
    10. 6.10 FLASH25
    11. 6.11 FLASH27
    12. 6.12 FLASH36
    13. 6.13 JTAG23
    14. 6.14 PORT10
    15. 6.15 PORT12
    16. 6.16 TA12
    17. 6.17 TA16
    18. 6.18 TA21
    19. 6.19 TAB22
    20. 6.20 TB2
    21. 6.21 TB16
    22. 6.22 TB24
    23. 6.23 USCI20
    24. 6.24 USCI21
    25. 6.25 USCI22
    26. 6.26 USCI23
    27. 6.27 USCI24
    28. 6.28 USCI25
    29. 6.29 USCI26
    30. 6.30 USCI27
    31. 6.31 USCI30
    32. 6.32 USCI34
    33. 6.33 USCI35
    34. 6.34 USCI40
    35. 6.35 XOSC5
    36. 6.36 XOSC8
  7. 7Revision History

6.12 FLASH36

FLASH Module

Category

Functional

Function

Flash content may degrade due to aborted page erases

Description

If a page erase is aborted by EEIEX, the flash page containing the last instruction before erase operation will start to degrade. This effect is incremental and, after repetitions, may lead to corrupted flash content.

Workaround

- Use the EEI (interrupted erasing) feature instead of EEIEX (abort erasing).
or
- A PSA checksum can be calculated over affected flash page using the marginal read mode (marginal 0). If PSA sum differs from expected PSA value the affected flash page has to be reprogrammed.
or
- Start flash erasing from RAM and limit system frequency to <1MHz (to ensure 6-us delay after EEIEX).  If the last instruction before erasing is located in RAM, flash cell degradation does not occur.