SLIS150M March   2014  – June 2024 DRV5013

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Magnetic Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Field Direction Definition
      2. 6.3.2 Device Output
      3. 6.3.3 Power-On Time
      4. 6.3.4 Output Stage
      5. 6.3.5 Protection Circuits
        1. 6.3.5.1 Overcurrent Protection (OCP)
        2. 6.3.5.2 Load Dump Protection
        3. 6.3.5.3 Reverse Supply Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Standard Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Configuration Example
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Alternative Two-Wire Application
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Device Markings
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.3 Power Supply Recommendations

The DRV5013 device is designed to operate from an input voltage supply (VM) range between 2.5 V and 38 V. A 0.01-µF (minimum) ceramic capacitor rated for VCC must be placed as close to the DRV5013 device as possible. Larger values of the bypass capacitor may be needed to attenuate any significant high-frequency ripple and noise components generated by the power source. TI recommends limiting the supply voltage variation to less than 50 mVPP.