SLIS150M March   2014  – June 2024 DRV5013

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Magnetic Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Field Direction Definition
      2. 6.3.2 Device Output
      3. 6.3.3 Power-On Time
      4. 6.3.4 Output Stage
      5. 6.3.5 Protection Circuits
        1. 6.3.5.1 Overcurrent Protection (OCP)
        2. 6.3.5.2 Load Dump Protection
        3. 6.3.5.3 Reverse Supply Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Standard Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Configuration Example
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Alternative Two-Wire Application
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Device Markings
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) DRV5013 UNIT
DBZ (SOT-23) LPG, LPE (TO-92)
3 PINS 3 PINS
RθJA Junction-to-ambient thermal resistance 333.2 180 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 99.9 98.6 °C/W
RθJB Junction-to-board thermal resistance 66.9 154.9 °C/W
ψJT Junction-to-top characterization parameter 4.9 40 °C/W
ψJB Junction-to-board characterization parameter 65.2 154.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.