SLIS150M March   2014  – June 2024 DRV5013

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Magnetic Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Field Direction Definition
      2. 6.3.2 Device Output
      3. 6.3.3 Power-On Time
      4. 6.3.4 Output Stage
      5. 6.3.5 Protection Circuits
        1. 6.3.5.1 Overcurrent Protection (OCP)
        2. 6.3.5.2 Load Dump Protection
        3. 6.3.5.3 Reverse Supply Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Standard Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Configuration Example
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Alternative Two-Wire Application
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
      2. 8.1.2 Device Markings
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.7 Magnetic Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT(1)
fBW Bandwidth(2) 20 30 kHz
DRV5013FA: ±1.3 mT
BOP Operate point; see Figure 6-2 TA = –40°C to TA,MAX(3) –0.6 1.3 3.4 mT
BRP Release point; see Figure 6-2 –3.4 –1.3 0.6
Bhys Hysteresis; Bhys = (BOP – BRP) 1.2 2.6
BO Magnetic offset; BO = (BOP + BRP) / 2 –1.5 0 1.5
DRV5013AD: ±2.7 mT
BOP Operate point; see Figure 6-2 TA = –40°C to TA,MAX(3) 1 2.7 5 mT
BRP Release point; see Figure 6-2 –5 –2.7 –1
Bhys Hysteresis; Bhys = (BOP – BRP) 5.4
BO Magnetic offset; BO = (BOP + BRP) / 2 –1.5 0 1.5
DRV5013ND: ±2.7 mT
BOP Operate point; see Figure 6-3 TA = 25°C 2 2.7 3.3 mT
TA = –40°C to TA,MAX(3) 1.5 2.7 3.6
BRP Release point; see Figure 6-3 TA = 25°C –3.3 –2.7 –2
TA = –40°C to TA,MAX(3) –3.6 –2.7 –1.5
Bhys Hysteresis; Bhys = (BOP – BRP) TA = 25°C 4.3 5.4
TA = –40°C to TA,MAX(3) 3 5.4
BO Magnetic offset; BO = (BOP + BRP) / 2 TA = 25°C –0.5 0 0.5
TA = –40°C to TA,MAX(3) –1 0 1
DRV5013AG: ±6 mT
BOP Operate point; see Figure 6-2 TA = –40°C to TA,MAX(3) 3 6 9 mT
BRP Release point; see Figure 6-2 –9 –6 –3
Bhys Hysteresis; Bhys = (BOP – BRP) 12
BO Magnetic offset; BO = (BOP + BRP) / 2 –1.5 0 1.5
DRV5013BC: ±12 mT
BOP Operate point; see Figure 6-2 TA = –40°C to TA,MAX(3) 6 12 18 mT
BRP Release point; see Figure 6-2 –18 –12 –6
Bhys Hysteresis; Bhys = (BOP – BRP) 24
BO Magnetic offset; BO = (BOP + BRP) / 2 –1.5 0 1.5
(1) 1 mT = 10 Gauss.
(2) Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output.
(3) TA, MAX is 125°C for Q devices and 150°C for E devices (see Figure 8-1).