SLLSE11H March   2012  – March 2019 SN65HVD72 , SN65HVD75 , SN65HVD78

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Power Dissipation
    7. 7.7  Switching Characteristics: 250 kbps Device (SN65HVD72) Bit Time ≥ 4 µs
    8. 7.8  Switching Characteristics: 20 Mbps Device (SN65HVD75) Bit Time ≥50 ns
    9. 7.9  Switching Characteristics: 50 Mbps Device (SN65HVD78) Bit Time ≥20 ns
    10. 7.10 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Data Rate and Bus Length
        2. 10.2.1.2 Stub Length
        3. 10.2.1.3 Bus Loading
        4. 10.2.1.4 Receiver Failsafe
        5. 10.2.1.5 Transient Protection
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 External Transient Protection
        2. 10.2.2.2 Isolated Bus Node Design
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Related Links
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

12.1 Layout Guidelines

On-chip IEC ESD protection is sufficient for laboratory and portable equipment but often insufficient for EFT and surge transients occurring in industrial environments. Therefore, robust and reliable bus node design requires the use of external transient protection devices.

Because ESD and EFT transients have a wide frequency bandwidth from approximately 3 MHz to 3 GHz, high-frequency layout techniques must be applied during PCB design.

For a successful PCB design, start with the design of the protection circuit in mind.

  1. Place the protection circuitry close to the bus connector to prevent noise transients from entering the board.
  2. Use VCC and ground planes to provide low-inductance. Note that high-frequency currents follow the path of least inductance and not the path of least impedance.
  3. Design the protection components into the direction of the signal path. Do not force the transients currents to divert from the signal path to reach the protection device.
  4. Apply 100-nF to 220-nF bypass capacitors as close as possible to the VCC pins of transceiver, UART, and controller ICs on the board.
  5. Use at least two vias for VCC and ground connections of bypass capacitors and protection devices to minimize effective via-inductance.
  6. Use 1-kΩ to 10-kΩ pullup or pulldown resistors for enable lines to limit noise currents in these lines during transient events.
  7. Insert pulse-proof series resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified maximum voltage of the transceiver bus pins. These resistors limit the residual clamping current into the transceiver and prevent it from latching up.
  8. While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient blocking units (TBUs) that limit transient current to 200 mA.