SLLSFS3 May 2024 MCT8316A-Q1
PRODUCTION DATA
The device is fully protected against any cross conduction of the MOSFETs. The high-side and low-side MOSFETs are carefully controlled to avoid any shoot-through events by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that the VGS of high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of same half-bridge as shown in Figure 6-11 and Figure 6-12 and vice versa.