SLLSFS9D September   2023  – December 2024 ISOM8110 , ISOM8111 , ISOM8112 , ISOM8113 , ISOM8115 , ISOM8116 , ISOM8117 , ISOM8118

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Insulation Specifications
    5. 6.5 Safety-Related Certifications
    6. 6.6 Safety Limiting Values
    7. 6.7 Electrical Characteristics
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Typical Application
        1. 9.1.1.1 Design Requirements
        2. 9.1.1.2 Detailed Design Procedure
          1. 9.1.1.2.1 Sizing RPULLUP
          2. 9.1.1.2.2 Sizing RIN
        3. 9.1.1.3 Application Curves
    2. 9.2 Power Supply Recommendations
    3. 9.3 Layout
      1. 9.3.1 Layout Guidelines
      2. 9.3.2 Layout Example
      3. 9.3.3 Reflow Profile
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.7 Electrical Characteristics

 All specifications are at TA = 25℃ unless otherwise noted
PARAMETER TEST CONDITIONS GPN MIN TYP MAX UNIT
INPUT
VF Input forward voltage IF =  5mA ISOM8110, ISOM8111, ISOM8112, ISOM8113 1.2 1.4 V
VF Input forward voltage IF = ±5mA ISOM8115, ISOM8116, ISOM8117, ISOM8118 1.2 1.5 V
IFT Input forward threshold current ISOM811x 0.5 mA
IR Input reverse current VR = 5V ISOM8110, ISOM8111, ISOM8112, ISOM8113 10 µA
CIN Input capacitance At 1MHz, VF = 0V ISOM8110, ISOM8111, ISOM8112, ISOM8113 19 pF
CIN Input capacitance At 1MHz, VF = 0V ISOM8115, ISOM8116, ISOM8117, ISOM8118 6 pF
OUTPUT
CCE Collector-emitter capacitance 1MHz, VF = 0V ISOM811x 10 pF
VCE(SAT) Collector-emitter saturation voltage IF = 20mA, IC = 1mA ISOM811x 0.3 V
IC_DARK Collector dark current VCE = 20V, IF = 0mA ISOM811x 100 nA
IEC Reverse current VEC = 7V, IF = 0mA ISOM811x 10 μA
IC_OFF OFF_state collector current VF = 0.7V, VCE = 48V ISOM811x 10
µA
CTR(1)
CTR Current Transfer Ratio  IF = 0.5mA, VCE = 5V ISOM8110 55 130 195 %
ISOM8115 55 130 195 %
ISOM8111 80 180 290 %
ISOM8116 80 180 290 %
ISOM8112 135 300 480 %
ISOM8117 135 300 480 %
ISOM8113 195 440 710 %
ISOM8118 195 440 710 %
CTR Current Transfer Ratio IF  = 2mA, VCE = 5V ISOM8110 70 120 170 %
ISOM8115 70 120 170 %
ISOM8111 110 180 260 %
ISOM8116 110 180 260 %
ISOM8112 185 300 430 %
ISOM8117 185 300 430 %
ISOM8113 265 440 635 %
ISOM8118 265 440 635 %
CTR Current Transfer Ratio IF  = 5mA, VCE = 5V ISOM8110 100 120 155 %
ISOM8115 100 120 155 %
ISOM8111 150 180 230 %
ISOM8116 150 180 230 %
ISOM8112 255 300 380 %
ISOM8117 255 300 380 %
ISOM8113 375 440 560 %
ISOM8118 375 440 560 %
(1) CTR (%) = (IC / IF) x 100%