SLOK014A November   2018  – August 2024 TLV1704-SEP

 

  1.   1
  2.   TLV1704-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 Single Event Latchup (SEL) Results
    2. 5.2 Single Event Transient (SET) Results
  9. 6Summary
  10. 7SET Results Appendix
  11. 8Confidence Interval Calculations
  12.   References
  13.   B Revision History

3 Test Device and Test Board Information

The TLV1704-SEP is packaged in a 14-pin, TSSOP shown with pinout in Figure 3-1. The TLV1704-SEP bias board is used for the SEE characterization is shown in Figure 3-2 and bias diagram in Figure 3-3.

TLV1704-SEP Pinout Diagram
TLV1704-SEP pinout diagram. The package was decap’ed to reveal the die face for all heavy ion testing.
Figure 3-1 TLV1704-SEP Pinout Diagram

Qualification Devices and Test

The TLV1704-SEP was biased in either an output high or output low condition in single supply, where V+ was set to 24V and V- was set to GND (0V). All non-inverting inputs of each channel were tied together; likewise, all inverting inputs of each channel were tied together. To achieve an output high state, IN+ was biased with 3V and IN- was biased with 2V. For an output low condition, IN+ was biased with 2V and IN- was biased with 3V. A nominal flux of 105 ions / s-cm2 and fluence of 107 ions / cm2 were used for each run during the exposure at 125°C.

TLV1704-SEP Bias Board Figure 3-2 TLV1704-SEP Bias Board
TLV1704-SEP Bias Diagram Figure 3-3 TLV1704-SEP Bias Diagram