SLOK017 June   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. TLV1H103-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. Overview
  5. SEE Mechanisms
  6. Test Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Results
    1. 6.1 Single Event Latchup (SEL) Results
    2. 6.2 Single Event Transient (SET) Results
  9. Summary
  10. SET Results Appendix
  11. Confidence Interval Calculations
  12. 10References

SEE Mechanisms

The primary single-event effect (SEE) events of interest in the TLV1H103-SEP are single-event latch-up (SEL). From a risk/impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. The 50BICOM3ZL process was used for the TLV1H103-SEP. CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient as the TLV1H103-SEP exhibited no SEL with heavy-ions up to an LETEFF of 43 MeV-cm2/mg at a fluence of 107 ions/cm2 and a chip temperature of 125°C.

This study was performed to evaluate the SEL effects with a bias voltage of 5.5V on Vcc Supply Voltage. Heavy ions with LETEFF =48.47 MeV-cm2/mg were used to irradiate the devices. Flux of 105 ions/s-cm2 and fluence of 107 ions/cm2 were used during the exposure at 125°C temperature.