SLOK017 June 2024 TLV1H103-SEP
PRODUCTION DATA
The primary single-event effect (SEE) events of interest in the TLV1H103-SEP are single-event latch-up (SEL). From a risk/impact point-of-view, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. The 50BICOM3ZL process was used for the TLV1H103-SEP. CMOS circuitry introduces a potential for SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts). The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is “latched”) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient as the TLV1H103-SEP exhibited no SEL with heavy-ions up to an LETEFF of 43 MeV-cm2/mg at a fluence of 107 ions/cm2 and a chip temperature of 125°C.
This study was performed to evaluate the SEL effects with a bias voltage of 5.5V on Vcc Supply Voltage. Heavy ions with LETEFF =48.47 MeV-cm2/mg were used to irradiate the devices. Flux of 105 ions/s-cm2 and fluence of 107 ions/cm2 were used during the exposure at 125°C temperature.