SLOK017 June   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. TLV1H103-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. Overview
  5. SEE Mechanisms
  6. Test Device and Test Board Information
  7. Irradiation Facility and Setup
  8. Results
    1. 6.1 Single Event Latchup (SEL) Results
    2. 6.2 Single Event Transient (SET) Results
  9. Summary
  10. SET Results Appendix
  11. Confidence Interval Calculations
  12. 10References

References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. TAMU Radiation Effects Facility website. http://cyclotron.tamu.edu/ref/
  4. "The Stopping and Range of Ions in Matter" (SRIM) software simulation tools website. www.srim.org/index.htm#SRIMMENU
  5. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  6. ISDE CRÈME-MC website.https://creme.isde.vanderbilt.edu/CREME-MC
  7. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  8. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.