SLOK017 June   2024 TLV1H103-SEP

PRODUCTION DATA  

  1.   1
  2. 1 TLV1H103-SEP Single-Event Effects (SEE) Radiation Report
  3.   Trademarks
  4. 2 Overview
  5. 3 SEE Mechanisms
  6. 4 Test Device and Test Board Information
  7. 5 Irradiation Facility and Setup
  8. 6 Results
    1. 6.1 Single Event Latchup (SEL) Results
    2. 6.2 Single Event Transient (SET) Results
  9. 7 Summary
  10. 8 SET Results Appendix
  11. 9 Confidence Interval Calculations
  12. 10References

4 Test Device and Test Board Information

The TLV1H103-SEP is packaged in a 6-pin, SOT-23 shown with pinout in Figure 4-1.

TLV1H103-SEP TLV1H103-SEP Pinout DiagramFigure 4-1 TLV1H103-SEP Pinout Diagram

Qualification Devices and Test Board

The TLV1H103-SEP was biased in either an output high or output low condition in single supply, where VCC was set to 5.5V and VEE was set to GND (0V). To achieve an output high state, IN+ was biased with 2V and IN- was biased with 1V. For an output low condition, IN+ was biased with 1V and IN- was biased with 2V. In either cases, the LE/HYST pin was left open. Heavy ions with LETEFF = 48.47 MeV-cm2 / mg were used to irradiate the devices. A nominal flux of 105 ions / s-cm2 and fluence of 107 ions / cm2 were used during the exposure at 125°C.

TLV1H103-SEP TLV1H103-SEP Bias DiagramFigure 4-2 TLV1H103-SEP Bias Diagram
TLV1H103-SEP TLV1H103-SEP Bias Board for SEL TestingFigure 4-3 TLV1H103-SEP Bias Board for SEL Testing.