SLOK021 August 2024 TLV1H103-SEP
The following is the device qualification summary:
Qualification by Similarity (Qualification Family)
A new device can be qualified either by performing full scale quality and reliability tests on the actual device or using previously qualified devices through "Qualification by Similarity" (QBS) rules.
By establishing similarity between the new device and those qualified previously, repetitive tests can be eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration.
The QBS rules for a technology, product, test parameters or package shall define which attributes are required to remain fixed for the QBS rules to apply.
The attributes which are expected and allowed to vary are reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations.
Each new device shall be reviewed for conformance to the QBS rule sets applicable to that device. See JEDEC JESD47 for more information.
| Note that qualification by similarity (qualification family) per JEDEC JESD47 is allowed. | ||||
|---|---|---|---|---|
| Description | Condition | Sample Size Used/Rejects | Lots Required | Test Method |
| Electromigration | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
| Wire Bond Life | Maximum Recommended Operating Conditions | N/A | N/A | Per TI Design Rules |
| Electrical Characterization | TI Data Sheet | 30 | 3 | N/A |
| Electrostatic Discharge Sensitivity | HBM Per TI Data sheet | 3 units/voltage | 1 | JEDEC JS-001 or EIA/JESD22-A114 |
| CDM Per TI Data sheet | JEDEC JS-002 or EIA/JESD22-C101 | |||
| Latch-up | Per Technology | 3/0 | 1 | EIA/JESD78 |
| Physical Dimensions | TI Data Sheet | 30/0 | 1 | EIA/JESD22- B100 |
| Bias Life Test | 125°C / 1000 hours or equivalent | 77/0 | 3 | JESD22-A108(1) |
| Biased HAST | 130°C / 85% / 96 hours | 77/0 | 3 | JESD22-A110/A101(1) |
| Extended Biased HAST or equivalent | 130°C / 85% / 250 hours (for reference) | 77/0 | 1 | JESD22-A101/A101(1) |
| Unbiased HAST | 130°C / 85% / 96 hours | 77/0 | 3 | JESD22-A.118(1) |
| Temperature Cycle | –65°C to +150°C
non-biased for 500 cycles Or equivalent | 77/0 | 3 | JESD22-A104(1) |
| Solderability | Bake Preconditioning | 22/0 | 1 | ANSI/J-STD-002 |
| Bond Shear | Per wire size | 5 units × 30/0 bonds | 3 | JESD22-B116 |
| Bond Pull Strength | Per wire size | 5 units × 30/0 bonds | 3 | ASTM F-459 |
| Die Shear | Per die size | 5/0 | 3 | MIL-STD-883, TM 2019 |
| High Temp Storage | 175°C / 420 hours | 77/0 | 3 | JESD22-A103(1) |
| Moisture Sensitivity | Surface Mount Only | 12 | 3 | J-STD-020(1) |
| Radiation Response Characterization | Per TI Data sheet | 5 units/dose level | 1 | MIL-STD-883/Method 1019 |
| Outgassing Characterization | TML <=1% (Total Mass Lost) CVCM <=0.1% (Collected Volatile Condensable Material) | 5 | 1 | ASTM E595 |