SLOS224L June   1999  – July 2024 THS4031 , THS4032

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information - THS4031
    5. 5.5 Thermal Information - THS4032
    6. 5.6 Electrical Characteristics - RL = 150Ω
    7. 5.7 Electrical Characteristics - RL = 1kΩ
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
      1. 6.3.1 Offset Nulling
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving a Capacitive Load
      2. 7.1.2 Low-Pass Filter Configurations
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Multiplexer Selection
        2. 7.2.2.2 Signal Source
        3. 7.2.2.3 Driving Amplifier
          1. 7.2.2.3.1 Driving Amplifier Bandwidth Restriction
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 General PowerPAD™ Integrated Circuit Package Design Considerations
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Electrostatic Discharge Caution

THS4031 THS4032 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.