SLOS681C January   2011  – August 2019 DRV632

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Operating Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Line Driver Amplifiers
      2. 9.3.2 Charge-Pump Flying Capacitor and PVSS Capacitor
      3. 9.3.3 Decoupling Capacitors
      4. 9.3.4 Gain-Setting Resistor Ranges
      5. 9.3.5 Input-Blocking Capacitors
      6. 9.3.6 DRV632 UVP Operation
      7. 9.3.7 External Undervoltage Detection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Using the DRV632 as a Second-Order Filter
      2. 9.4.2 Mute Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Charge-Pump Flying, PVSS and Decoupling Capacitors
        2. 10.2.2.2 Second-Order Active Low-Pass Filters
        3. 10.2.2.3 UVP Resistor Divider
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Gain-Setting Resistors
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

13.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.