SLOSE58B May   2020  – May 2022 DRV8932

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Bridge Control
      2. 7.3.2 Current Regulation
      3. 7.3.3 Decay Modes
        1. 7.3.3.1 Blanking time
      4. 7.3.4 Charge Pump
      5. 7.3.5 Linear Voltage Regulators
      6. 7.3.6 Logic and Quad-Level Pin Diagrams
        1. 7.3.6.1 nFAULT Pin
      7. 7.3.7 Protection Circuits
        1. 7.3.7.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.7.2 VCP Undervoltage Lockout (CPUV)
        3. 7.3.7.3 Overcurrent Protection (OCP)
        4. 7.3.7.4 Thermal Shutdown (OTSD)
        5. 7.3.7.5 Fault Condition Summary
    4. 7.4 Device Functional Modes
      1. 7.4.1 Sleep Mode (nSLEEP = 0)
      2. 7.4.2 Operating Mode (nSLEEP = 1)
      3. 7.4.3 nSLEEP Reset Pulse
      4. 7.4.4 Functional Modes Summary
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Current Regulation
        2. 8.2.2.2 Power Dissipation and Thermal Calculation
        3. 8.2.2.3 Application Curves
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
  12. 12Mechanical, Packaging, and Orderable Information

Electrical Characteristics

Typical values are at TA = 25°C and VVM = 24 V. All limits are over recommended operating conditions, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLIES (VM, DVDD)
IVMVM operating supply currentnSLEEP = 1, No load56.5mA
IVMQVM sleep mode supply currentnSLEEP = 024μA
tSLEEPSleep timenSLEEP = 0 to sleep-mode120μs
tRESETnSLEEP reset pulsenSLEEP low to clear fault2040μs
tWAKEWake-up timenSLEEP = 1 to output transition0.81.2ms
tONTurn-on timeVM > UVLO to output transition0.81.2ms
VDVDDInternal regulator voltageNo external load, 6 V < VVM < 33 V4.555.5V
VVM = 4.5 V 4.2 4.35 V
CHARGE PUMP (VCP, CPH, CPL)
VVCPVCP operating voltage6 V < VVM < 33 VVVM + 5V
f(VCP)Charge pump switching frequencyVVM > UVLO; nSLEEP = 1360kHz
LOGIC-LEVEL INPUTS (IN1, IN2, IN3, IN4, nSLEEP)
VILInput logic-low voltage00.6V
VIHInput logic-high voltage1.55.5V
VHYSInput logic hysteresis150mV
IILInput logic-low currentVIN = 0 V–11μA
IIHInput logic-high currentVIN = 5 V100μA
QUAD-LEVEL INPUTS (TOFF)
VI1Input logic-low voltageTied to GND00.6V
VI2330kΩ ± 5% to GND11.251.4V
VI3Input Hi-Z voltageHi-Z (>500kΩ to GND)1.822.2V
VI4Input logic-high voltageTied to DVDD2.75.5V
IOOutput pull-up current10μA
CONTROL OUTPUTS (nFAULT)
VOLOutput logic-low voltageIO = 5 mA0.5V
IOHOutput logic-high leakage–11μA
MOTOR DRIVER OUTPUTS (OUT1, OUT2, OUT3, OUT4)
RDS(ONH)High-side FET on resistanceTJ = 25 °C, IO = -1 A450550mΩ
TJ = 125 °C, IO = -1 A700850mΩ
TJ = 150 °C, IO = -1 A780950mΩ
RDS(ONL)Low-side FET on resistanceTJ = 25 °C, IO = 1 A450550mΩ
TJ = 125 °C, IO = 1 A700850mΩ
TJ = 150 °C, IO = 1 A780950mΩ
CURRENT REGULATION (VREF)
KVTransimpedance gainVREF = 3.3 V2.092.22.31V/A
IVREF VREF Leakage Current VREF = 3.3 V 8.25 μA
tOFFPWM off-timeTOFF = 07μs
TOFF = 116
TOFF = Hi-Z24
TOFF = 330 kΩ to GND32
ΔITRIP Current trip accuracy IO = 1.5 A, 10% to 20% current setting -15 15 %
IO = 1.5 A, 20% to 67% current setting -10 10
IO = 1.5 A, 68% to 100% current setting -5 5
PROTECTION CIRCUITS
VUVLOVM UVLO lockoutVM falling, UVLO falling4.14.254.35V
VM rising, UVLO rising4.24.354.45
VUVLO,HYSUndervoltage hysteresisRising to falling threshold100mV
VCPUVCharge pump undervoltageVCP fallingVVM + 2V
IOCPOvercurrent protectionCurrent through any FET2.5A
tOCPOvercurrent deglitch time1.8μs
TOTSDThermal shutdownDie temperature TJ150165180°C
THYS_OTSDThermal shutdown hysteresisDie temperature TJ20°C